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    41C4000A Search Results

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    41C4000A Price and Stock

    Samsung Semiconductor KM41C4000AJP

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    Bristol Electronics KM41C4000AJP 408
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    Samsung Semiconductor KM41C4000AJ-8

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    Bristol Electronics KM41C4000AJ-8 170
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    Samsung Electronics Co. Ltd KM41C4000AJ8

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    ComSIT USA KM41C4000AJ8 55
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    41C4000A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


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    DD131S7 KM41C4000AL 41C4000AL 41C4000AL- 130ns 150ns 100ns 180ns 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C4000ASL 41C4000ASL 130ns 41C4000ASL- 150ns 41C40OOASL-10 100ns 180ns 20-LEAD PDF

    MT28F400B3WG-8 tcp 41c

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


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    41C4000A 130ns 100ns 180ns KM41C4000A Q0131SS 18-LEAD 20-LEAD 001315b MT28F400B3WG-8 tcp 41c PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM584000A 84000A- 84000A-10 100ns 130ns 150ns 180ns 84000A PDF

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C4000ASL 41C4000ASL KM41C4000ASL 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


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    KM41C4000AL 4000AL- 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications


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    KM41C4000ASL 4000ASL- 41C4000ASL- ASL-10 130ns 4000AS 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory Its design is optimized for high perform ance applications


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    KM41C4000AL 130ns 4000AL- 150ns 100ns 180ns 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    KM41C4000A 41C4000A- 130ns 150ns 100ns 18-LEAD 20-LEAD PDF

    NG9-2

    Abstract: No abstract text available
    Text: 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C4000AL 41C4000AL 18-LEAD 20-LEAD NG9-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory.


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    Q013174 KM41C4000ASL 130ns 4000ASL- 150ns 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. Its design is optimized for high perform ance applications


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    KM41C4000A 130ns 41C4000A- 100ns 20-LEAD PDF

    AE12A

    Abstract: No abstract text available
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    KM41C4000A 18-LEAD 20-LEAD AE12A PDF

    KMM584000A7

    Abstract: No abstract text available
    Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM M 584000A- 8 80ns 20ns 150ns K M M 584000A -10 100ns 25ns 180ns KM M 584000A- 7 • • • • • • •


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    KMM584000A 84000A- 84000A 100ns 130ns 150ns 180ns KMM584000A7 PDF

    KM41C4000ASL-10

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    KM41C4000ASL 130ns 150ns 180ns 4000AS 18-LEAD 20-LEAD KM41C4000ASL-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000AL CMOS DRAM 4 M X 1 Bit C M O S Dynamic R AM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Memory. Its design is optimized for high perform ance applications


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    KM41C4000AL 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    KM41C4000ASL 4000ASL- 130ns 180ns 18-LEAD 20-LEAD PDF

    km41c4000a

    Abstract: a38ag 41C4000A
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C4000A 18-LEAD 20-LEAD km41c4000a a38ag 41C4000A PDF

    41C464

    Abstract: 41C258 41C1000 44C256C
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.


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    KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C PDF

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z PDF

    KM41C4000A-8

    Abstract: KM41C4000A-10 KM41C4000A-7 km41c4000a
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    KM41C4000A 18-LEAD 20-LEAD KM41C4000A-8 KM41C4000A-10 KM41C4000A-7 km41c4000a PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess Memory. Its design is optimized for high perform ance applications


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    KM41C4000AL 18-LEAD 20-LEAD PDF