1M300
Abstract: 40N30 40n30a
Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient
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Original
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
1M300
40N30
40n30a
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient
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Original
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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OCR Scan
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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IXfk 75 N 50
Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400
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OCR Scan
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76N06-11
76N06-12
76N07-11
76N07-12
67N10
75N10
42N20
50N20
50N20S
58N20
IXfk 75 N 50
15N80
50N-2
110N06 n
100N10
110N06
10n90
IXFH40N30
ixfk73n30
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SMD B26
Abstract: SMD L4
Text: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj
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OCR Scan
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40N30/S
40N30A/S
40N30B/S
220ns
120ns
Cto150
O-247
SMD B26
SMD L4
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PDF
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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OCR Scan
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CS1011
-18io1
CS1011-22io1
CS1011-25io1
CS1250-12io1
CS1250-14io1
CS1250-16io1
CS20-12
CS20-14
CS20-16
8n80
DS117-12A
36-18N
16go
20N60A
2QN60
62-16N07
DSA117-12
10N60A
MCC95-12io1B
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PDF
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IXFH40N30
Abstract: smd diode 819
Text: giX Y S H IP e rF E T P o w e r IX F H 4 0 N 3 0 S M O S F E T v ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr — 300 V — 40 A ¥ DSS V — < 85 mQ 200 ns Prelim inary data Symbol Maximum Ratings Test Conditions
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OCR Scan
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O-247
40N30S
40N30
D94010DE,
IXFH40N30
smd diode 819
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PDF
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