Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    40N120D Search Results

    SF Impression Pixel

    40N120D Price and Stock

    IXYS Corporation IXEH40N120D1

    IGBT NPT 1200V 60A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXEH40N120D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    40N120D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40N120

    Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C


    Original
    40N120 40N120D1 O-247 40N120 40n120d 40N120D1 40N120 DATASHEET D-68623 PDF

    40N120

    Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original
    40N120 40N120D1 O-247 40N120 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d PDF

    40n120

    Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d
    Text: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original
    40N120 40N120D1 O-247 40N120D1 40n120 40N120 DATASHEET 40n120 igbt D-68623 40n120d PDF

    40n120

    Abstract: 40N120D1
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original
    40N120 40N120D1 O-247 40N120 40N120D1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan
    O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF