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    40G121 Price and Stock

    Vishay Beyschlag UMA02040G1211BAU00

    UMA 0204-05 0.1% AU 1K21
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UMA02040G1211BAU00 Box 100
    • 1 -
    • 10 -
    • 100 $2.7734
    • 1000 $2.7734
    • 10000 $2.7734
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    Vishay Beyschlag UMA02040G1210BAU00

    UMA 0204-05 0.1% AU 121R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UMA02040G1210BAU00 Box 100
    • 1 -
    • 10 -
    • 100 $2.7734
    • 1000 $2.7734
    • 10000 $2.7734
    		Buy Now

    Vishay Beyschlag UMA02040G1212BAU00

    UMA 0204-05 0.1% AU 12K1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UMA02040G1212BAU00 Box 100
    • 1 -
    • 10 -
    • 100 $2.7734
    • 1000 $2.7734
    • 10000 $2.7734
    		Buy Now

    Vishay Intertechnologies UMA02040G1210BAU00

    MELF Resistors UMA 0204-05 0.1% AU 121R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UMA02040G1210BAU00
    • 1 $5.61
    • 10 $5.07
    • 100 $3.78
    • 1000 $2.72
    • 10000 $2.68
    		Get Quote

    Vishay Intertechnologies UMA02040G1211BAU00

    MELF Resistors UMA 0204-05 0.1% AU 1K21
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UMA02040G1211BAU00
    • 1 $5.61
    • 10 $5.07
    • 100 $3.78
    • 1000 $2.72
    • 10000 $2.68
    		Get Quote
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    40G121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40G121

    Abstract: GT40G121
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB 40G121 GT40G121 PDF

    40G121

    Abstract: No abstract text available
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB 40G121 PDF

    GT40G121

    Abstract: 40G121 gt40
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB GT40G121 40G121 gt40 PDF