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    40G12 Search Results

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    40G12 Price and Stock

    Infineon Technologies AG IDWD40G120C5XKSA1

    DIODE SIC 1.2KV 110A PGTO2472
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    DigiKey IDWD40G120C5XKSA1 Tube 351 1
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    Mouser Electronics IDWD40G120C5XKSA1 166
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    Newark IDWD40G120C5XKSA1 Bulk 200 1
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    RS IDWD40G120C5XKSA1 Bulk 25 2 Weeks 1
    • 1 $14.22
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    TME IDWD40G120C5XKSA1 1
    • 1 $32.01
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    Chip One Stop IDWD40G120C5XKSA1 Tube 347 0 Weeks, 1 Days 5
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    New Advantage Corporation IDWD40G120C5XKSA1 960 1
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    Infineon Technologies AG IDW40G120C5BFKSA1

    DIODE ARR SIC 1200V 55A PGTO2473
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    DigiKey IDW40G120C5BFKSA1 Tube 281 1
    • 1 $11.5
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    • 100 $8.27167
    • 1000 $7.76288
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    Avnet Americas IDW40G120C5BFKSA1 Tube 95 12 Weeks 30
    • 1 $8.63232
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    Mouser Electronics IDW40G120C5BFKSA1 211
    • 1 $9.86
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    Newark IDW40G120C5BFKSA1 Bulk 136 1
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    Chip One Stop IDW40G120C5BFKSA1 Tube 917 0 Weeks, 1 Days 1
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    EBV Elektronik IDW40G120C5BFKSA1 13 Weeks 240
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    STMicroelectronics STPSC40G12WLY

    AUTOMOTIVE 1200 V, 40A POWER SCH
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    DigiKey STPSC40G12WLY Tube 200 1
    • 1 $22.21
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    Mouser Electronics STPSC40G12WLY 200
    • 1 $22.09
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    • 100 $13.76
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    STMicroelectronics STPSC40G12WLY 200 1
    • 1 $21.65
    • 10 $21.57
    • 100 $13.49
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    STMicroelectronics STPSC40G12WL

    1200 V, 20 A HIGH SURGE SILICON
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    DigiKey STPSC40G12WL Tube 90 1
    • 1 $14.46
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    Mouser Electronics STPSC40G12WL 188
    • 1 $14.32
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    Newark STPSC40G12WL Bulk 185 1
    • 1 $20.03
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    STMicroelectronics STPSC40G12WL 188 1
    • 1 $14.03
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    EBV Elektronik STPSC40G12WL 26 Weeks 30
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    Mean Well RSDW40G-12

    DC DC CONVERTER 12V 40W
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    DigiKey RSDW40G-12 Bulk 40 1
    • 1 $42.38
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    Mouser Electronics RSDW40G-12 167
    • 1 $42.04
    • 10 $39.25
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    TME RSDW40G-12 1
    • 1 $63.76
    • 10 $48.21
    • 100 $41.92
    • 1000 $41.92
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    Master Electronics RSDW40G-12 50
    • 1 $42.17
    • 10 $40.06
    • 100 $36.15
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    Sager RSDW40G-12 1
    • 1 $46.92
    • 10 $37.5
    • 100 $33.82
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    Find more 40G12 price and stock on Findchips.com

    40G12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40G12

    Abstract: ls10 diode
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 50 / 40


    Original     		PDF

    40G121

    Abstract: GT40G121
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB 40G121 GT40G121 PDF

    40G12

    Abstract: DIODE 40G12
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 50 / 40


    Original     		PDF

    40G121

    Abstract: No abstract text available
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB 40G121 PDF

    GT40G121

    Abstract: 40G121 gt40
    Text: 40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40G121 Fourth-Generation IGBT Current Resonance Inverter Switching Applications • Unit: mm Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)


    Original     		GT40G121 O-220AB GT40G121 40G121 gt40 PDF