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    40B0200 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 200 IFAVM = 6130 IFSM = 45 VF0 = 0.80 rF = 0.030 Rectifier Diode V A kA V mΩ 5SDD 40B0200 Doc. No. 5SYA 1154-01 Feb-99 Features • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance


    Original     		PDF 40B0200 Feb-99 40B0200 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


    Original     		PDF 40B0200 5SYA1154-02 creepage0200 CH-5600

    ED 05 Diode

    Abstract: MS-9600
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Ω Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


    Original     		PDF 40B0200 5SYA1154-02 CH-5600 ED 05 Diode MS-9600

    Untitled

    Abstract: No abstract text available
    Text: VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 mΩ Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking


    Original     		PDF 40B0200 5SYA1154-02 CH-5600

    08D diode

    Abstract: X53200
    Text: R E C T I F I E R _ D Optimized for line frequency rectifiers. Low on-state voltage, narrow Vp-bands for parallel operation. Self protected against transient over voltages. Guaranteed maximum avalanche power dissipation. I O D E S - O ptim iert für Anwendungen mit Netz­


    OCR Scan     		PDF 2000A/200V 08D diode X53200