Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD620010 SHD620010P TECHNICAL DATA DATA SHEET 4075, REV. E HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 40 AMP, POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE. FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
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SHD620010
SHD620010P
300-VOLT,
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K1047
Abstract: NTCS0603E3 SS0805 C3964 5x222 NTCS0402E3223 103 ntc K347
Text: V i s hay I n t e r t echn o l o g y, I nc . NTHS a nd NTCS Se r ie s Key Benefits • Nickel/tin and tin/lead terminations available • Wraparound terminations • Allows design flexibility for use with hybrid circuitry • High-density monolithic construction
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VMN-PT9103-1008
K1047
NTCS0603E3
SS0805
C3964
5x222
NTCS0402E3223
103 ntc
K347
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SMD Thermistors-Sample Kit
Abstract: NTHS0603N01N1003JE
Text: SMD Thermistors-Sample Kit www.vishay.com Vishay Sample Kit Surface Mount Thermistors NTCS, TFPT, NTHS, PTS FEATURES • NTC and PTC thermistors • AEC-Q200 qualified and UL certified products available • Material categorization: for definitions of compliance please see
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AEC-Q200
SMD Thermistors-Sample Kit
NTHS0603N01N1003JE
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EPC Gan transistor
Abstract: Ultra Low Qg EPC1001
Text: DATASHEET EPC1001 EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1001
EPC Gan transistor
Ultra Low Qg
EPC1001
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EPC1005
Abstract: EPC Gan transistor
Text: DATASHEET EPC1005 EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1005
EPC1005
EPC Gan transistor
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EPC1001
Abstract: EPC Gan transistor
Text: DATASHEET EPC1001 EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1001
EPC1001
EPC Gan transistor
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Untitled
Abstract: No abstract text available
Text: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1015
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EPC Gan transistor 1015
Abstract: EPC1015 EPC Gan transistor
Text: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1015
EPC Gan transistor 1015
EPC1015
EPC Gan transistor
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Untitled
Abstract: No abstract text available
Text: DATASHEET EPC1005 EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC1005
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EPC Gan transistor
Abstract: EPC2001 DIODE marking ED X9
Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2001
EPC Gan transistor
EPC2001
DIODE marking ED X9
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EPC2015
Abstract: EPC Gan transistor FX-93 micrometer
Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2015
EPC2015
EPC Gan transistor
FX-93
micrometer
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EPC2001
Abstract: EPC Gan transistor FX-93 FET MARKING QG
Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2001
EPC2001
EPC Gan transistor
FX-93
FET MARKING QG
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Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2801
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Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2001
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Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2015
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Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2815 EPC2815 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 40 V RDS ON , 4 mW ID , 33 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
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EPC2815
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Abstract: No abstract text available
Text: EPC2001 eGaN FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mΩ ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure
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EPC2001
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NTCS0402E3103
Abstract: 50264 E148885 NTCS0402E3 NTCS0402E3153 NTCS0402E3472 NTCS0402E3223 RT214
Text: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected
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NTCS0402E3.
E148885)
2002/95/EC
2002/96/EC
B25/85-value
11-Mar-11
NTCS0402E3103
50264
E148885
NTCS0402E3
NTCS0402E3153
NTCS0402E3472
NTCS0402E3223
RT214
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NTCS0402E3473
Abstract: No abstract text available
Text: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected
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NTCS0402E3.
E148885)
2002/95/EC
2002/96/EC
R25-value
B25/85-value
11-Mar-11
NTCS0402E3473
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NTCS0402E3223
Abstract: ntc 901
Text: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected
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NTCS0402E3.
E148885)
2002/95/EC
2002/96/EC
R25-value
B25/85-value
18-Jul-08
NTCS0402E3223
ntc 901
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Untitled
Abstract: No abstract text available
Text: NTCS0402E3.T www.vishay.com Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations
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NTCS0402E3.
E148885)
AEC-Q200
B25/85-value
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected
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NTCS0402E3.
E148885)
2002/95/EC
2002/96/EC
B25/85-value
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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NTC 472
Abstract: No abstract text available
Text: V i shay Intertechn o l o g y, Inc . Resistors - Accurate Over a Wide Temperature Range I INNOVAT AND TEC O L OGY NTCS and NTHS Series N HN NTC THERMISTORS O 19 62-2012 NTC Thermistors, Surface-Mount Chips Key Benefits • • • • • Nickel/tin and tin/lead terminations available
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NTCS0402
NTCS0603
B25/75
B25/85
NTHS0402
NTHS0603
NTHS0805
NTHS1206
VMN-PT9103-1203
NTC 472
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LT 537
Abstract: 80502
Text: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected
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NTCS0402E3.
E148885)
2002/95/EC
2002/96/EC
R25-value
B25/85-value
2002/95/EC.
2011/65/EU.
LT 537
80502
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