bav50
Abstract: bav500
Text: BAV5004LP HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: 50ns Maximum 400V High Reverse Breakdown Voltage Rating Low Capacitance: 2.5pF Maximum Surface Mount Package Ideally Suited for Automated Insertion
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BAV5004LP
AEC-Q101
X1-DFN1006-2
J-STD-020
MIL-STD-202,
X1-DFN1006-2
DS32181
bav50
bav500
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transistor BU406
Abstract: 400V 100MA NPN npn transistor 400V Transistor Transistor Power Horizontal NPN Transistor 5A 400V BU406 400V switching transistor crt horizontal deflection circuit transistor for horizontal deflection output NPN Power Transistor 5A 400V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU406 DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 750ns(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages
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BU406
750ns
20MHz
transistor BU406
400V 100MA NPN
npn transistor 400V
Transistor Transistor Power Horizontal
NPN Transistor 5A 400V
BU406
400V switching transistor
crt horizontal deflection circuit
transistor for horizontal deflection output
NPN Power Transistor 5A 400V
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Untitled
Abstract: No abstract text available
Text: BAV5004LP HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: 50ns Maximum 400V High Reverse Breakdown Voltage Rating Low Capacitance: 2.5pF Maximum Surface Mount Package Ideally Suited for Automated Insertion
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BAV5004LP
AEC-Q101
X1-DFN1006-2
J-STD-020
MIL-STD-202,
DS32181
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mmbd5004
Abstract: MMBD5004A
Text: MMBD5004A/C/S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • NEW PRODUCT Fast Switching Speed: 50ns High Reverse Breakdown Voltage Rating: 400V Low Leakage Current Surface Mount Package Ideally Suited for Automated Insertion
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MMBD5004A/C/S
J-STD-020
MIL-STD-202,
MMBD5004A
MMBD5004C
DS35585
mmbd5004
MMBD5004A
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A1381
Abstract: No abstract text available
Text: Ordering number : ENA1381A TIG058E8 N-Channel IGBT http://onsemi.com 400V, 150A, VCE sat ;4V, Single ECH8 Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (4V)
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ENA1381A
TIG058E8
12mm2
VCE320V,
A1381-7/7
A1381
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MMBD5004
Abstract: YW marking MMBD5004S marking code YW DIODE DS30832
Text: MMBD5004S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • Fast Switching Speed: 50ns Surface Mount Package Ideally Suited for Automated Insertion High Reverse Breakdown Voltage Rating: 400V Lead Free by Design/RoHS Compliant Note 1
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MMBD5004S
J-STD-020
MIL-STD-202,
DS30832
MMBD5004
YW marking
MMBD5004S
marking code YW DIODE
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Untitled
Abstract: No abstract text available
Text: MMBD5004BRM HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data • • • • • • • • N EW PRODU CT Two Series Diode Circuits Connect to Form Full Wave Bridge Fast Switching Speed Low Capacitance 400V Reverse Breakdown Voltage Rating
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MMBD5004BRM
OT-26
J-STD-020
MIL-STD-202,
DS30714
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MMBD5004A
Abstract: No abstract text available
Text: MMBD5004A/C/S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • N EW PRODU CT Fast Switching Speed: 50ns High Reverse Breakdown Voltage Rating: 400V Low Leakage Current Surface Mount Package Ideally Suited for Automated Insertion
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MMBD5004A/C/S
J-STD-020
MIL-STD-202,
DS35585
MMBD5004A
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845 diode
Abstract: irgp4063
Text: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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7210A
IRGP4063DPbF
O-247AC
845 diode
irgp4063
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SMBJ20A
Abstract: capacitor 100nf 400v SMBJ12A
Text: date 06/20/2014 page 1 of 7 SERIES: PBK-5 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 5 W continuous output ultra compact SIP package universal input voltage: 85~264 Vac / 100~400 Vdc single regulated outputs from 3.3~24 Vdc
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PBK-5-12
SMBJ20A
capacitor 100nf 400v
SMBJ12A
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Untitled
Abstract: No abstract text available
Text: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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7210A
IRGP4063DPbF
O-247AC
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IRGP4063D
Abstract: No abstract text available
Text: PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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7210A
IRGP4063DPbF
O-247AC
IRGP4063D
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SMBJ20A
Abstract: SMBJ12A
Text: date 08/09/2013 page 1 of 6 SERIES: PBK-3 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • • up to 3 W continuous output compact SIP package universal input 85~264 Vac single regulated outputs from 5~24 V 3,000 Vac isolation
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UL60950-1
Vdc/85
PBK-3-12
PBK-3-15
SMBJ20A
SMBJ12A
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SMBJ20A
Abstract: No abstract text available
Text: date 03/25/2014 page 1 of 9 SERIES: PBK-3 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 3 W continuous output compact SIP package single regulated outputs from 3.3~24 V 3,000 Vac isolation over current and short circuit protections
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UL60950-1
PBK-3-31
PBK-3-12
PBK-3-15
SMBJ20A
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IRGR4045D
Abstract: No abstract text available
Text: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • IC 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGR4045DPbF
Pa641
EIA-481
EIA-541.
EIA-481.
IRGR4045D
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IRGP4660
Abstract: IRGP4660D-EPBF
Text: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive
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IRGP4660DPbF
IRGP4660D-EPbF
O-247AC
IRGP4660DPbF
O-247AD
IRGP4660D-EP
IRGP4660DPbF/IRGP4660D-EPbF
JESD22-A114)
IRGP4660
IRGP4660D-EPBF
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SMBJ20A
Abstract: No abstract text available
Text: date 08/09/2013 page 1 of 6 SERIES: PBK-1 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 1 W continuous output compact SIP package single regulated outputs from 5~24 V 3,000 Vac isolation over current and short circuit protections
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UL60950-1
PBK-1-12
PBK-1-15
PBK-1-24
SMBJ20A
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Xenon Flash 6v
Abstract: xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V
Text: T OP I C S 新 闻 发 表 新 商 品 2009年1月22日新闻发表 手机用超小型Xenon Flash IGBT 它以业界最小2.8mm x 2.9mm实现了ICP=150A 安装高度实现了0.9mm! 最适用于带照相功能的手机。它实现了业界最小*安装面积。*: 截至2009年1月22日
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TIG058E8
00V/100A
0000W
LED6000
12mm2
TIG030TS
Xenon Flash 6v
xenon
Xenon Flash
xenon 5W 12V
TIG032TS
TIG030TS
TIG014SS
TIG058E8
RE0208DA
IGBT 320V
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IGBT
Abstract: TIG058E8 igbt 800v 50a igbt xenon tube igbt 12V 1A xenon tube RE0208 TIG030TS 12v igbt TIG032TS
Text: T OP I C S ニュースリリース製品トピックス 2009年1月22日リリース 携帯電話向け超小型キセノンフラッシュ用IGBTを開発 実装高0.9mmを実現！ 業界最小※サイズ 2.8mm x 2.9mm でIcp=150Aを実現！ カメラ付き携帯電話に最適な業界最小※実装面積を実現！※：2009年1月22日現在
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TIG058E8
00V/100A
0000W
LED6000
TIG058E8
12mm2
TIG030TS
IGBT
igbt 800v 50a
igbt xenon tube
igbt 12V 1A
xenon tube
RE0208
TIG030TS
12v igbt
TIG032TS
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SMBJ20A
Abstract: No abstract text available
Text: date 03/25/2014 page 1 of 7 SERIES: PBK-1 │ DESCRIPTION: AC-DC POWER SUPPLY FEATURES • • • • • • • • up to 1 W continuous output compact SIP package single regulated outputs from 5~24 V 3,000 Vac isolation over current and short circuit protections
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UL60950-1
PBK-1-12
PBK-1-15
PBK-1-24
SMBJ20A
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IRGP4063DPBF
Abstract: IRGP4063D international rectifier
Text: IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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IRGP4063DPbF
IRGP4063D-EPbF
O-247AD
IRGP4063D
international rectifier
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Untitled
Abstract: No abstract text available
Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters
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IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
JESD47F)
O-220
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irgp4063pbf
Abstract: IRGP4063DPBF IRGP4063
Text: PD - 97404 IRGP4063PbF IRGP4063-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of the parts tested for ILM
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IRGP4063PbF
IRGP4063-EPbF
O-247AD
IRGP4063DPBF
IRGP4063
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op07 equivalent single supply
Abstract: T1012A LT1364 equivalent LT318A LT1256 equivalent LTC1150 equivalent lt1056c LTC1051 1013D LT1022A
Text: Op Amp Selection Guide Selection by Design Parameter High Slew Rate Typ Slew Rate Low Power < 50 liA < 1m A < 60|iA > 400V/HS > 50V/ JS >10V/|iS Maximum Supply Current (per Amplifier L F41 2A (D ) LM118/318 LT1190 LT1230 (Q) LT1022ALL LT118A/318A LT1191 LT1252
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OCR Scan
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LT1078A
LT1079A
LT1178A
LT1179
LT1179A
LT1077
LT1078
LT1006
LT1008
LT1012
op07 equivalent single supply
T1012A
LT1364 equivalent
LT318A
LT1256 equivalent
LTC1150 equivalent
lt1056c
LTC1051
1013D
LT1022A
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