4.7PF POTENTIOMETER Search Results

JMK212BJ106M

Abstract: MAX9486 MAX9486EVKIT C1005X7R1H102K EMK105BJ103K
Contextual Info: 19-3396; Rev 0; 8/04 MAX9486 Evaluation Kit The MAX9486 EV kit evaluates the MAX9486, a highperformance clock synthesizer with an 8kHz input reference clock. The EV kit provides six buffered 35.328MHz outputs, CLK1–CLK6, and a jitter-suppressed 8kHz output REO. The EV kit operates from a

k 2679

Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
Contextual Info: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full

Contextual Info: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced

240101S

Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF240101S

Abstract: LM7805
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications

Contextual Info: User's Guide SLWU046 – October 2006 TRF1115EVM 1 2 3 4 5 Contents Introduction . EVM Test Configuration .

LM7805 M SMD

Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 smd

Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

Application Notes on LM7805

Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

LM7805 M SMD

Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 smd

Abstract: LM7805 smd transistor marking C14
Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency

Contextual Info: A D S -944 F o ^ n E i L 5MHz, 14-Bit Sampling A/D Converter INNOVATION an d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 5MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay

LM7805

Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

LTC5585

Abstract: demodulate IR phase shifter dc to 100mhz 4G base station power amplifier
Contextual Info: Optimizing the Performance of Very Wideband Direct Conversion Receivers Design Note 1027 John Myers, Michiel Kouwenhoven, James Wong, Vladimir Dvorkin Introduction Zero-IF receivers are not new; they have been around for some time and are prominently used in cell phone

Contextual Info: APR i 15 !38? i'O A D S -9 2 6 k ^ T E L ' 500kHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE . -PS* s . , . -, : V -O -V,. . O M » *> V f *’ « FEATURES • 14-Bit resolution • 500kHz sampling rate • No missing codes • Functionally complete

Contextual Info: & E 3A T E L A D S -1 1 2 12-Bit, 1MHz, Low-Power Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • 12-Bit resolution No m issing codes 1MHz m inim um sam pling rate Functionally complete Small 24-pin DDIP

Contextual Info: ADS-944 B d A T E L 14-Bit, 5MHz Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • • 14-Bit resolution 5MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay

Contextual Info: 9 D A T E ADS-931 L 16-Bit, 1MHz Sampling A/D Converters INNOVATION and EXCELLENCE PRELIMINARY PRODUCT DATA FEATURES • • • • • • • • • 16-Bit resolution 1MHz sampling rate Functionally complete No missing codes over full military temperature range

Contextual Info: l ' E M n E A D S -930 U 16-Bit, 500kHz Sampling A/D Converter IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • • 16-Bit resolution 500kHz sampling rate Functionally complete Excellent dynamic performance 83dB SNR, -89dB THD

Contextual Info: ADS-931 □M n 16-Bit, 1MHz Sampling A/D Converter INNOVATION and EXCELLENCE PRELIMINARY PRODUCT DATA FEATURES 16-Bit resolution 1MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay Low-power, 2.9 Watts

XR-5451

Abstract: bbe sound 5451 exar XR5451
Contextual Info: XR-5451 BBE Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL DESCRIPTION VflEF The XR-5451 is a matched pair of sound enhance­ ment processors using the patented BBE® Sound Enhancement technique to provide more lifelike audio to reproduced sound regardless of its source.

s927

Contextual Info: ADS-927 B D A T E L 14-Bit, 1MHz, Low-Power Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • 14-Bit resolution 1 MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP or SMT package

XR-5451

Abstract: 5451 xr5451 sound filter circuit diagram precision rectifier voltage controlled amplifier bbe sound EXAR BBE
Contextual Info: Tß? E X A R XR-5451 BBE Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL DESCRIPTION VREF The XR-5451 is a matched pair of sound enhance­ ment processors using the patented BBE® Sound Enhancement technique to provide more lifelike audio to reproduced sound regardless of its source.