4 MARKING AABS Search Results

2SC1412

Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Contextual Info: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type

2SC1412K

Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Contextual Info: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.

PN3906 TRANSISTOR PNP

Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
Contextual Info: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

Contextual Info: A L L A P P R O M U S T A N D B E I D A T E D K V E R Y o o s nci a *-3 to R E V o o a o o K! C tc s : O M trH ^ »-3 N x ‘ _• L a l e b P E R r»j o f?r~ DD W t- * to M* H f-3 C i : y-i. . L* E . <o > ^5\ K 1 v- ^ ^•3 M a . W o_ "sf °1 >< 0 1 rS- O

LX8213-00ISE

Abstract: SOT 23 MOSFET 5-PIN MARKING AK LX8213-12ISE LX8213-33ISE LDO MARKING
Contextual Info: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ

Contextual Info: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ

Contextual Info: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3M

Contextual Info: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3M

sec 472M

Abstract: kc 472m 472m ceramic capacitor ac 472m F103M KD 222M kc 222m KD 472 M 472M capacitor cd 471k capacitor
Contextual Info: CERAMIC CAPACITORS SAFETY RECOGNIZED CAPACITORS-KC TYPE 125VAC to 400VAC n iu f ía la DE Series DIMENSIONS: mm PART NUMBERING SY STEM I TYPE D E715 0 i CAPACITOR TYPE AND SIZE TEM R CH AR. FZ T i TEMPERATURE CHARACTERISTICS Temperature Range B = -25°C to +85°C

MARKING FAl

Abstract: sot23-5 Marking mosfet
Contextual Info: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

sot-23 Marking pcA

Contextual Info: SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 • For general A F applications • High collector current • High current gain • Complementary types: B C V 26, B C V 46 PNP Type Marking Ordering Code (tape and reel) PinC :onfigur ation 2 1 3

B50A

Abstract: TFS1150A
Contextual Info: Filename: tfs1150A.doc Version 1.4 VI TELEFILTER 06.01.2004 Development specification TFS1150 A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 100 100 Characteristics Remark: The Reference level for the relative attenuation a rel of the TFS1150A is the minimum attenuation in the pass band. The minimum attenuation in the pass

BC 247

Abstract: BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182
Contextual Info: SIE D SIEMENS • fl2 3 SbüS GDM],S24 n i HSIEG S I E M EN S A K T I E N G E S E L L S C H A F NPN Silicon AF Transistors BC 182 BC 183 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 212, BC 213 PNP Type BC

4 marking aabs

Contextual Info: Filename: tfs 1575.doc Version 1.1 VI TELEFILTER 02.03.2004 Filter specification TFS 1575 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 50 50 Ω Ω Characteristics Remark: The maximum attenuation in the pass band is defined as the insertion loss ae. The nominal frequency fN is fixed at 1575,42 MHz without tolerance or limit.

79015

Contextual Info: Filename: tfs 1150a.doc Version 1.6 VI TELEFILTER 28.10.2005 Filter specification TFS 1150A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 100 100 Ω Ω Characteristics Remark: The Reference level for the relative attenuation arel of the TFS1150A is the minimum attenuation in the pass band. The minimum attenuation in the pass

TFS465D

Contextual Info: Filename: TFS465D.doc Version 1.0 VI TELEFILTER 19.11.2003 Preliminary specification TFS 465D 1/5 Measurement condition Ambient temperature: 23 Input power level: Terminating impedances: input: output: °C dBm 50 Ω 50 Ω Characteristics Remark: The maximum attenuation in the pass band is defined as the insertion loss ae. The nominal frequency fN is fixed at 465,0 MHz without any

1MN37

Contextual Info: AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION DESCRIPTION IMPORTANT: For the http://www.microsemi.com most current Each output is capable of sourcing 700mA with a withstand voltage of 75V over the full military temperature range.

1MN37

Abstract: AAHS298B 8 channel Source Driver
Contextual Info: AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION DESCRIPTION IMPORTANT: For the http://www.microsemi.com most current Each output is capable of sourcing 700mA with a withstand voltage of 75V over the full military temperature range.

KT 117A

Abstract: SMD CODE HBA
Contextual Info: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking

MAX6365

Abstract: MAX6366 MAX6367 MAX6368 MAX6367PKA44 aabp marking code aaaM AABW marking code AABJ
Contextual Info: 19-1658; Rev 4; 5/09 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor

marking code AABJ

Abstract: AACE AABE marking aabi AABJ marking code ce SOT23 marking code R2 sot23 MAX6365 MAX6366 MAX6367
Contextual Info: 19-1658; Rev 3; 12/05 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor

SOT-23 aabd

Abstract: AACE MAX636 5 PIN SOT-23 MARKING AABB aabi AABJ marking code R2 sot23 AAAX MAX6365-8 AABY
Contextual Info: 19-1658; Rev 2; 5/05 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor