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    Abstract: No abstract text available
    Text: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;


    Original     		3VD499650YL 3VD499650YL O-220 12N65; PDF

    12N65

    Abstract: 3VD499650YL
    Text: 3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1


    Original     		3VD499650YL 3VD499650YL O-220 12N65; 12N65 PDF