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onsemi NB3N853531EDTR2G IC CLK BUFFER 2:4 266MHZ 20TSSOP
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DigiKey	NB3N853531EDTR2G	Digi-Reel	2,500		1	1 $8.6 10 $5.926 100 $4.4614 1000 $3.66854 10000 $3.66854	Buy Now
	NB3N853531EDTR2G	Cut Tape	2,500		1	1 $8.6 10 $5.926 100 $4.4614 1000 $3.66854 10000 $3.66854	Buy Now
	NB3N853531EDTR2G	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.76004	Buy Now
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Newark	NB3N853531EDTR2G	Cut Tape			1	1 $4.75 10 $4.75 100 $4.75 1000 $4.75 10000 $4.75	Buy Now
	NB3N853531EDTR2G	Reel			2,500	1 $4.5 10 $4.5 100 $4.5 1000 $4.5 10000 $4.01	Buy Now
Rochester Electronics	NB3N853531EDTR2G		51,236		1	1 $3.98 10 $3.98 100 $3.74 1000 $3.38 10000 $3.38	Buy Now
Ameya Holding Limited	NB3N853531EDTR2G		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Wuhan P&S	NB3N853531EDTR2G		4,840		1	1 $9.99 10 $9.99 100 $6.38 1000 $4.84 10000 $4.84	Buy Now
onsemi NB3N853501EDTR2G IC CLK BUFFER 2:4 266MHZ 20TSSOP
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DigiKey	NB3N853501EDTR2G	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.6	Buy Now
	NB3N853501EDTR2G	Digi-Reel	2,500		1	1 $8.64 10 $5.953 100 $4.4833 1000 $3.68755 10000 $3.68755	Buy Now
	NB3N853501EDTR2G	Cut Tape	2,500		1	1 $8.64 10 $5.953 100 $4.4833 1000 $3.68755 10000 $3.68755	Buy Now
Avnet Americas	NB3N853501EDTR2G	Reel		24 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $3.7728	Buy Now
Mouser Electronics	NB3N853501EDTR2G					1 - 10 - 100 - 1000 - 10000 $3.6	Get Quote
Newark	NB3N853501EDTR2G	Reel			2,500	1 $4.53 10 $4.53 100 $4.53 1000 $4.53 10000 $4.04	Buy Now
Rochester Electronics	NB3N853501EDTR2G		244,825		1	1 $4 10 $4 100 $3.76 1000 $3.4 10000 $3.4	Buy Now

EBV Elektronik	NB3N853501EDTR2G			26 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NB3N853501EDTR2G		293,647			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	NB3N853501EDTR2G		2,140		1	1 $10.04 10 $10.04 100 $6.41 1000 $4.86 10000 $4.86	Buy Now
onsemi NB3N853501EDTG IC CLK BUFFER 2:4 266MHZ 20TSSOP
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DigiKey	NB3N853501EDTG	Tube	41		1	1 $11.54 10 $10.423 100 $11.54 1000 $11.54 10000 $11.54	Buy Now
	NB3N853501EDTG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NB3N853501EDTG		42,271		1	1 $3.5 10 $3.5 100 $3.29 1000 $2.98 10000 $2.98	Buy Now
STMicroelectronics STW23N85K5 MOSFET N-CH 850V 19A TO247
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DigiKey	STW23N85K5	Tube			1	1 $8.22 10 $8.22 100 $4.78167 1000 $3.55212 10000 $3.55212	Buy Now
Avnet Americas	STW23N85K5	Tube		16 Weeks	600	1 - 10 - 100 - 1000 $3.5672 10000 $3.38298	Buy Now
Mouser Electronics	STW23N85K5					1 - 10 - 100 - 1000 $3.55 10000 $3.55	Get Quote
STMicroelectronics	STW23N85K5				1	1 $7.42 10 $7.37 100 $3.77 1000 $3.49 10000 $3.49	Buy Now
TME	STW23N85K5				1	1 $6.99 10 $5.56 100 $4.99 1000 $4.99 10000 $4.99	Get Quote

Avnet Silica	STW23N85K5			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STW23N85K5			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NB3N853531EDTG IC CLK BUFFER 2:4 266MHZ 20TSSOP
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DigiKey	NB3N853531EDTG	Bulk			44	1 - 10 - 100 $6.93 1000 $6.93 10000 $6.93	Buy Now

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3N85 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
3N85	General Electric	Semiconductor Data Book 1971	Scan	PDF
3N85	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
3N85	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
3N85	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
3N85	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
3N85	Unknown	GE Transistor Specifications	Scan	PDF
3N85	Unknown	Short Form Datasheet and Cross Reference Data	Short Form	PDF
3N85	Unknown	Cross Reference Datasheet	Scan	PDF
3N85	Silec Semiconductors	Shortform Data Book 1976	Short Form	PDF
3N850	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF

3N85 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3N84 Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp Text: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of	OCR Scan	PDF	2NM46 2N327 3N84 2N4988 RCA SCR 2n 2N4991 3N81 2N4984 IN4I48 3N85 40v neon lamp
2n2646 equivalent Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
2N4983 Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can	OCR Scan	PDF	2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
2N6021 Abstract: 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85 Text: SPECIAL SILICON PRODUCTS SILICON CONTROL SWITCHES— SCS 28 Cutoff Charac teristics GE Type V ak !r- Anode Voltage Slocking (V) Continuous DC Forward Current (rnA) Peak Recurrent Forward Current (A) Cathode Gate Peak Current (m A) ( a 1 1OO//S0C Con	OCR Scan	PDF	100//s 800L\ I0V-25V 2N6021 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85
3n84 Abstract: 3N81 TB4140V CG2-22-10 CG2-22-14 CG2-25-10 TB4100V TB4120V TB4160V 3N82 Text: THYRISTORS , AT Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings V DWM TYPES 'o A V RWM (V) ITSM V RSM (10ms) (V) (A) lH V GT (V) 'GT ImA) rg k= V TM oo Im A ] (V) 345 A eff (rms) / tcase=80°C t(vj)=125°C l2t=80.000A2s	OCR Scan	PDF	000A2 CG2-22- CG2-22-10 CG2-22-14 10Kii 200mA 3n84 3N81 TB4140V CG2-25-10 TB4100V TB4120V TB4160V 3N82
2n2646 equivalent Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
3N81 Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto Text: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of	OCR Scan	PDF
2N2646 equivalent Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
2N4985 Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can	OCR Scan	PDF	2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
Thyristor Xo 602 MA Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241 Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and	OCR Scan	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	PDF	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
2n2646 equivalent Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84 Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	PDF	2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84

L23402 Abstract: No abstract text available Text: L2340 Digital Synthesizer □ D ig ital W av efo rm S y n th esis a t 50 M H z The L2340 is a digital synthesizer th at perform s w aveform synthesis, m odulation, an d dem odulation. □ 24-Bit Polar Phase A ngle Accuracy □ User-selectableWaveformSynthesis,	OCR Scan	PDF	L2340 L2340 24-Bit 16-bit 16-bit 32-bit L2340G L23402
3N83 Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987 Text: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of	OCR Scan	PDF	20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
3n84 Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81 Text: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of	OCR Scan	PDF	200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81

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3N85 Search Results

3N85 Price and Stock

onsemi NB3N853531EDTR2G

onsemi NB3N853501EDTR2G

onsemi NB3N853501EDTG

STMicroelectronics STW23N85K5

Rochester Electronics LLC NB3N853531EDTG

3N85 Datasheets (10)

3N85 Datasheets Context Search

3N84

2n2646 equivalent

2N4983

2N6021

3n84

2n2646 equivalent

3N81

2N2646 equivalent

2N4985

sx3704

MC2259

Thyristor Xo 602 MA

transistor c2060

2n2646 equivalent

L23402

3N83

3n84