Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. APE8912/3N-HF-3 1.2V/1.32V 400mA Low Dropout Fixed-Mode Regulator Features Description Maximum dropout at full load current of 1.5V Fast transient response Output current limiting Built-in thermal shutdown Needs Only 1uF Capacitor for stability
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APE8912/3N-HF-3
400mA
APE891X-3
APE891X
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Untitled
Abstract: No abstract text available
Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3906FA
DFN0806
-200mA
435mW
MMBT3904FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36017
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PS331
Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
Text: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8
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PS3100
14-bit
PS331
PS331S
Data sheet of thermistor 10K ohms ntc
Microcrystal MX1V-TL-32.768K
2N7002-SOT23
SOT23-GSD
SOT23GSD
cmr200tb
MFR resistor
MX1V-TL
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MMBT3906
Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
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MMBT3906
MMBT3904)
AEC-Q101
J-STD-020
MIL-STD-202,
DS30059
MMBT3906
MMBT3906Q-7-F
transistor marking c3n
K3N diodes
npn k3n
MMBT3906Q
MMBT3906-13-F
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what is major function of RC network
Abstract: AND8219 ladder network thermal 304E-4
Text: AND8218/D How to Extend a Thermal−RC−Network Model Derived from Experimental Data to Respond to an Arbitrarily Fast Input Prepared by: Roger Paul Stout, PE and David T. Billings, PE ON Semiconductor Glossary of Symbols R thermal resistance (°C/W) C
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AND8218/D
what is major function of RC network
AND8219
ladder network thermal
304E-4
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2N3906 SOT-23
Abstract: K3N SOT-23 SOT-23 2A 2n3906 sot 23 2n3906 sot23 PNP 2N3906 MMBT3906 2N3906 2N3906 die 2n3906 2a
Text: 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT3906 Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available
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2N3906
MMBT3906
2N3904/MMBT3904)
O-92/SOT-23,
MIL-STD-202,
OT-23
OT-23
2N3906 SOT-23
K3N SOT-23
SOT-23 2A
2n3906 sot 23
2n3906 sot23
PNP 2N3906
MMBT3906
2N3906 die
2n3906 2a
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CMPD6001
Abstract: LT1716 LT1716CS5 LT1716IS5 MO-193
Text: Final Electrical Specifications LT1716 SOT-23, 44V, Over-The-Top, Micropower, Precision Rail-to-Rail Comparator July 2002 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Operates from 2.7V to 44V Over-The-Top : Input Common Mode Range Extends 44V Above V –, Independent of V +
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LT1716
OT-23,
OT-23
quiescent1442
10mVMAX
LTC1540
LT1634
10ppm/
LTC1921
CMPD6001
LT1716
LT1716CS5
LT1716IS5
MO-193
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marking JY sot-23
Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40
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SR520G-30
OD-723
SR651H-40
OD-323
SR521G-30
BAT54T
OT-416
SR751G-40
marking JY sot-23
sot-23 Marking 3D
BAT34
LV4, SMD
SOT-346
sot-23 Marking B1
SR715F
SMD23
bat54 sot-323
B4 SOD-123
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Bi 3101 A
Abstract: transistor ITT 108 MMBT3904
Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g
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MMBT3906
MMBT3904
OT-23
Bi 3101 A
transistor ITT 108
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB3N120E/D
MTB3N120E
In982.
418B-02
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB3N100E/D
MTB3N100E
MTB3N100E/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET
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MTD3N25E/D
TD3N25E
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MOSFET MARKING 3F
Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz
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Transistors/SOT23
MMBT2222A
BT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
BS817
BS850
MOSFET MARKING 3F
sot23 s07
marking 702 sot23
Diode marking CODE 1M
transistor marking 6c
2F PNP SOT23
marking code 2f
2F P marking
NA MARKING SOT23
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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MAX4180ESA
Abstract: No abstract text available
Text: 19-1221; Rev2; 8/98 >kiyixi>ki Single/Dual/Quad, 2 7 0 M H z , 1mA, SOT23, C u rre n t-F e e d b a c k Amplifiers with S h u td o w n Description The M AX4180 fa m ily of c u rre n t-fe e d b a c k a m p lifie rs c o m b in e s h ig h -sp e e d p e rfo rm a n c e , low d is to rtio n ,
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AX4180
MAX4180ESA
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SMBT4403
Abstract: SMBT5401 SMBT4401 marking 2G SOT23
Text: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401
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OT-23
SMBT2222A
SMBT3904
SMBT4401
SMBTA05
SMBTA06
SMBT5551
SMBTA42
OT-23
SMBT4403
SMBT5401
marking 2G SOT23
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY ADVANCE INFORMATION SEMICONDUCTORS D.S. 34431.3 VR25 2.5V PRECISION MICROPOWER BANDGAP VOLTAGE REFERENCE The VR25 is a monolithic integrated circuit using the bandgap principle to provide a precise reference voltage of 2.5V. The VR25 does not require any external capacitance for
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OT-23
OT-23
37bfiSE2
37bflSEE
0G22T51
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SOT89 MARKING 2E
Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application
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OT-89
OT-223
BF821
BF822
BF823
BSP16
BSP20
BSR19
BSR19A
BSR20
SOT89 MARKING 2E
SOT89 MARKING 2d
marking codes transistors sot-223
SOT-23 MARKING T36
bt1 marking
DA SOT-89
df SOT-223
DA SOT-89 NPN
MARKING 2D SOT-89
PMBT5551
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IMBT4403
Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C
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G0D40fl3
OT-23
IMBT3903
IMBT3904
IMBT4400
10Ol3Â
IMBT4401
10CX3>
IMBT2222
BC807-16
IMBT4403
5n80
BC817-16
BC817-25
BC817-40
BC846A
IMBT2222A
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IMBT4401
Abstract: No abstract text available
Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A
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O-236
OT-23)
IMBT3903
IMBT3904
IMBT4400
IMBT4401
IMBT2222
IMBT2222A
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Untitled
Abstract: No abstract text available
Text: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell
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FDC653N
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FDC6303N
Abstract: No abstract text available
Text: August 1997 F/MRCHII-D M lC O N D U C T O R FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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FDC6303N
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IMBT4403
Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222
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-TO-236
OT-23)
IMBT3903
IMBT3904
IMBT4400
IMBT4401
IMBT2222
IMBT2222A
10/mA
BC807-16
IMBT4403
6u sot-23
BC817-16
BC817-25
BC817-40
BC846A
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74V1T32
Abstract: No abstract text available
Text: s= 7 SGS-THOMSON ^7# KfflO «iLiM(s iO(gS 74V1T32 SINGLE 2-INPUT OR GATE PRELIMINARY DATA . HIGH SPEED: tpD = 5 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Ice = 1 (MAX.) at Ta = 25 °C . COMPATIBLE WITH TTL OLTTPLTTS: V ih = 2V (MIN), Vil = 0.8V (MAX)
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74V1T32
OT23-5L)
74V1T32S
74V1T32
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