3MBTB74 Search Results

FDC6324L

Abstract: SOIC-16
Contextual Info: P A I R C H December 1997 I I - D SEM IC ONDUCTO R tm FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially

FDC6301N

Abstract: Supersot 6 FAIRCHILD SOT-23 MARK PC FDC6301 SOIC-16
Contextual Info: P A I R C H July 1997 I I - D M IC D N D U C T Q R i FDC6301N Dual N-Channel Digital FET Features General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: R A I R C H December 1997 I I - D SE M IC O N D U C T O R tm FDC6324L Integrated Load Switch G eneral D escription Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially

FDC6323L

Abstract: SOIC-16 Supersot 6 20-kohm
Contextual Info: December 1997 F A IR C H IL D SEM ICONDUCTO R tm FDC6323L Integrated Load Switch General Description Features T h e s e Integrated Load S w itches are produced using Fairchild's proprietary, high cell density, D M O S technology. T his v e ry high d e nsity process is e sp ecially tailored to

Contextual Info: December 1997 F A IR C H IL D S E M IC O N D U C T O R tm FDC6323L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to