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    Skyworks Solutions Inc 533FC000308DG

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    Skyworks Solutions Inc 533FC000339DG

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    Skyworks Solutions Inc 533FC000286DG

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    Skyworks Solutions Inc 533FC000339DGR

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    Skyworks Solutions Inc 533FC000286DGR

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    3FC000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original
    W28J320B/T 16/4M PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original
    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


    OCR Scan
    Am29DL32xC 16-Bit) 29DL32xC L323C PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3582B AT49BV322D AT49BV322DT AT49BV PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19 PDF

    LRS1830

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.


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    LRS1830 LRS1830) EL14Z046 LRS1830 PDF

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


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    M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT PDF

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


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    M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000 PDF

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


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    Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00 PDF

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


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    S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    F49L320UA/F49L320BA 304x8 152x16 9s/11s PDF

    mx29lv320ttc

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte FEB/10/2003 MAR/26/2003 APR/23/2003 JUL/04/2003 mx29lv320ttc MX29LV320T Q0-Q15 SA10 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


    Original
    F49L320UA/F49L320BA 304x8 152x16 9s/11s PDF

    SA70

    Abstract: 18FFFFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


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    DS05-50204-2E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 SA70 18FFFFH PDF