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    3F80 Price and Stock

    Central Technologies CTCB0603F-800M

    FERRITE BEAD 80 OHM 0603 1LN
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    DigiKey CTCB0603F-800M Reel 8,548 1
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    Vishay Beyschlag NTCALUG01A103F800

    THERM NTC 10KOHM 3984K RING LUG
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    DigiKey NTCALUG01A103F800 Bulk 1,018 1
    • 1 $5.36
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    • 100 $4.2024
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    Vishay Beyschlag NTCALUG02A103F804A

    NTC LUG02A 10K 1% 3435K G30 80MM
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    DigiKey NTCALUG02A103F804A Bulk 1,000 1
    • 1 $1.9
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    Vishay Beyschlag NTCALUG02A103F800A

    NTC LUG02 10K 1% 3984K E4 80MM A
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    DigiKey NTCALUG02A103F800A Bulk 395 1
    • 1 $1.9
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    Vishay Beyschlag NTCALUG02A103F800L

    THERMISTOR NTC 10KOHM RING LUG
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    DigiKey NTCALUG02A103F800L Bulk 394 1
    • 1 $2.05
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    • 1000 $1.32228
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    3F80 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3F80 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    3F80 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    3F80 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    3F80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOXA

    Abstract: D13-26 WE353 1024K CSI EPROM a652 D2637
    Text: APR 2 0 19W PUMA 3F8003 moXaic PUMA 3F8003-15/17/20 Issue 1 .0 : M arc h 1991 ADVANCE PRODUCT INFORMATION Mosaic Sem iconductor inc. 8,388,608 bit CMOS FLASH Memory Module Pin Definition Features Fast access times of 150/170/200 ns Utilizes 66 PGA FR4 epoxy substrate


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    10jis, A0-A17 D8-15 D16-23 D24-31 1024K 3F8003I-15 MOXA D13-26 WE353 1024K CSI EPROM a652 D2637 PDF

    Untitled

    Abstract: No abstract text available
    Text: •PUMA 3F8003 molate PUMA 3F8003-15/17/20 Issue 1.0 : March 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 8,388,608 bit CMOS FLASH Memory Module Pin D efinition Features Fast access times of 150/170/200 ns Utilizes 66 PGA FR4 epoxy substrate


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    3F8003 3F8003-15/17/20 10stypical) A0-A17 1024Kx8 3F8003I-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    MOTOROLA ONCORE UT plus

    Abstract: hp 35821 6132 RAM 731 motorola MPCPRGREF/D LG E50 MPC8xx QMC SMC microcode MPC857DSL MPC857T MPC862
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MPC862UM/D 09/2002, REV 2 MPC862 PowerQUICC Family User’s Manual Supports MPC862P MPC862T MPC857T MPC857DSL For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


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    MPC862UM/D MPC862 MPC862P MPC862T MPC857T MPC857DSL MOTOROLA ONCORE UT plus hp 35821 6132 RAM 731 motorola MPCPRGREF/D LG E50 MPC8xx QMC SMC microcode MPC857DSL MPC857T PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    W28J320B/T 16/4M PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS320DM6437 Digital Media Processor www.ti.com SPRS345D – NOVEMBER 2006 – REVISED JUNE 2008 1 TMS320DM6437 Digital Media Processor 1.1 Features • • • • High-Performance Digital Media Processor DM6437 – 2.5-, 2.-, 1.67-, 1.51-, 1.43-ns Instruction


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    TMS320DM6437 SPRS345D DM6437) 43-ns 700-MHz 32-Bit TMS320C64x 32-/40-Bit) 32-Bit, PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3582B AT49BV322D AT49BV322DT AT49BV PDF

    NAND FLASH BGA

    Abstract: AC97 AIC12 DDR2-400 SM320C6424-EP GP703
    Text: SM320C6424-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR www.ti.com SPRS580 – JUNE 2009 1 Introduction 1.1 Features • • • High-Performance Digital Signal Processor C6424 – 2.5-, 2-, 1.67-, 1.43-ns Instruction Cycle Time – 400-, 500-, 600-, 700-MHz C64x+ Clock


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    SM320C6424-EP SPRS580 C6424) 43-ns 700-MHz 32-Bit SM320C64x 32-/40-Bit) 32-Bit, 16-Bit, NAND FLASH BGA AC97 AIC12 DDR2-400 SM320C6424-EP GP703 PDF

    MD-720-3

    Abstract: srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga
    Text: CL-GD7548 * ’CIRRUS LOGIC9 A d v a n c e H a rd w a re Reference M a n u a l FEATURES • Single-chip XGA/Super VGA LCD controller — Pin-compatible superset of CL-GD7541/7543 SVGA LCD controllers G U I-A ccelerated X G A /S V G A LCD C on troller w ith Low -C ost M ultim edia


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    CL-GD7541/7543 16-bit MD-720-3 srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga PDF

    edi PB60

    Abstract: mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15
    Text: Suites 2202-7, 22/F, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel 852 2123 3289 Fax (852) 2123 3393 E-mail: sales@jesstech.com HomePage: http://www.jesstech.com WT5082 V0.97 DESCRIPTION The WT5082 is a high-performance, low-cost, CMOS 8-bit single-chip micro-controller with POCSAG


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    WT5082 WT5082 decoder12KB 296KB 56x32 56x33 x55y25 x55y24 x07y32 x06y32 edi PB60 mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15 PDF

    communication IC 3802

    Abstract: 64F38004 HD64338001H MX73P Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    d-2888, H8/3802, H8/38004, H8/38002S, H8/38104 REJ09B0024-0700 communication IC 3802 64F38004 HD64338001H MX73P Nippon capacitors PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV6402M S29GL128N 110R PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    P9234

    Abstract: 1LSCS EB412 REJ09B0042 til 815 display Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    H8/38024, H8/38024S, H8/38024R, H8/38124 REJ09B0042-0800 P9234 1LSCS EB412 REJ09B0042 til 815 display Nippon capacitors PDF