3F40 Search Results

Contextual Info: PUMA 3F4003 m o la ic PUMA 3F4003-12/15/20 Issue 1.0 : March 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features 1 12 23 O o o O o o O o o O o o o o o o o o o o o o o o o o o o o o o o o

Contextual Info: MOSAIC SEMICONDUCTOR INC 40E D ^ b B S B a ? 11! 0 0 0 0 4 7 ^ M SMOC r-V4~l3-'27 PUMA 3F4003 PUMA 3F4003-12/15/20 Issue 1.0 : March 1991 Mosaic Semiconductor ADVANCE PRODUCT INFORMATION Inc. 4,194,304 bit CMOS FLASH Memory Module Pin Definition Features Block Diagram

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

Contextual Info: DAC8165 DA C8 165 www.ti.com . SBAS409A – FEBRUARY 2008 – REVISED FEBRUARY 2008 14-Bit, Quad Channel, Ultra-Low Glitch, Voltage Output

TDD 1605

Abstract: lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S PLCC44 SEL24 STLC3040
Contextual Info: STLC3040 S U BSC R IBER LINE INTERFACE CODEC FILTER, CO FISLIC PRELIM IN ARY DATA PLCC44 O RDERING NUM BER: STLC3040FN Figure 1 : Pin Connection Top view o > [ « [ <° \ Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

MD-720-3

Abstract: srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga
Contextual Info: CL-GD7548 * ’CIRRUS LOGIC9 A d v a n c e H a rd w a re Reference M a n u a l FEATURES • Single-chip XGA/Super VGA LCD controller — Pin-compatible superset of CL-GD7541/7543 SVGA LCD controllers G U I-A ccelerated X G A /S V G A LCD C on troller w ith Low -C ost M ultim edia

DAC7564

Abstract: DAC7565 DAC8164 DAC8165 DAC8564 DAC8565 TSSOP-16
Contextual Info: DA DAC8165 C8 165 SBAS409B – FEBRUARY 2008 – REVISED MARCH 2011 www.ti.com 14-Bit, Quad Channel, Ultra-Low Glitch, Voltage Output Digital-to-Analog Converter with 2.5V, 2ppm/°C Internal Reference Check for Samples: DAC8165 FEATURES DESCRIPTION • Relative Accuracy: 1LSB

edi PB60

Abstract: mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15
Contextual Info: Suites 2202-7, 22/F, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel 852 2123 3289 Fax (852) 2123 3393 E-mail: sales@jesstech.com HomePage: http://www.jesstech.com WT5082 V0.97 DESCRIPTION The WT5082 is a high-performance, low-cost, CMOS 8-bit single-chip micro-controller with POCSAG

cxm8

Abstract: xsxx 05F4 05611 333c 4N 3SM G7M datasheet RSFX 3F40
Contextual Info: &101$=>-0?$@-A"$! &-B-%C-:$' ! !"#$µ µ%$&'#( *+,-$&./.012 345210-6$&78$914-:$;56<27-10<:-4 • !"#$%&'#$()*+#,-'.),/*.'#*& ■ 012345067)-*8+'#,9.$):+)#*)1;<=>504?<@A ■ ■ N*F)(,/+$&/,*")+$"'.#O)C*&).*"%<&$'-B)'"() $P#$"($(<&$'-B)'+.,-'#,*"/ ■ !"(:/#&O</#'"('&(D)@=<+,")9:##$&C.O)+'-K'%$

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

28F256L30

Abstract: 28F128L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C