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    onsemi FXL6408UMX

    IC XPNDR 400KHZ I2C 16UMLP
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    Microchip Technology Inc SY58608UMG-TR

    IC CLK BUFFER 1:2 3GHZ 16MLF
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    DigiKey SY58608UMG-TR Digi-Reel 2,727 1
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    SY58608UMG-TR Cut Tape 2,727 1
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    SY58608UMG-TR Reel 1,000 1,000
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    SY58608UMG-TR Reel 1,000
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    Microchip Technology Inc SY58608UMG-TR Reel 1,000 8 Weeks
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    NAC SY58608UMG-TR 2,000 1
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    Microchip Technology Inc SY58608UMG

    IC CLK BUFFER 1:2 3GHZ 16MLF
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    DigiKey SY58608UMG Tube 806 1
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    Microchip Technology Inc SY58608UMG Tube 1,200 8 Weeks
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    TME SY58608UMG 1
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    Altech Corporation 1G08UM

    1G08UM0.8A CIRCUIT BREAKER G CHA
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    TestEquity LLC 1G08UM
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    Altech Corporation 2G08UM

    2G08UM 0.8A CIRCUIT BREAKER G CH
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    0.8UM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HT6576

    Abstract: CS2917 400NS t2d70
    Text: HT6576 Advanced SCSI CHIP Features • • • • • Support the ANSI X3.131-1986 standard Asynchronous transfer rate to 5 Mbyte/sec Support initiator and target mode 0.8um CMOS process • • On chip 48mA single-ended drivers and receivers Non internal clock needed


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    PDF HT6576 44pins HT6576 CS2917 400NS t2d70

    Untitled

    Abstract: No abstract text available
    Text:       0.8um 1P3M High Voltage 40V / 40V      Features !     !         !     ! "#$  " $ %& "' *  +$  $


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    PDF

    Untitled

    Abstract: No abstract text available
    Text:       Gate Array CMOS Library 0.8um, 5V CMOS Technology                                   !"   "    


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    0.8um

    Abstract: 1P2M BPSG MAGNACHIP
    Text: 0.8um 1P2M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 175Å


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    fe 1.1s

    Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
    Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low


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    PDF GM76C256B 55/70/E GM76C256BL/BLL 450mil) 55/70/85ns CS250 fe 1.1s GM76C512 a 683 transister GM76 GM76C5 cs25-02

    DS80CH11

    Abstract: 9883
    Text: Dallas Semiconductor IME 3Q01 Product Tested Fails ppm DS2118M DS21X5Y DS80CH11 12380 5182 9191 3 14 66 242 2409 7181 Totals for 0.6um: 27031 83 3071 DS1232 DS87C520 DS2154 9883 10936 12243 3 14 21 304 1280 1715 Totals for 0.8um: 31278 38 1215 Goal = 300 ppm


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    PDF DS2118M DS21X5Y DS80CH11 DS1232 DS87C520 DS2154 DS21352 DS21554 9883

    transistor

    Abstract: 2P2M
    Text:       0.8um 2P2M Mixed Signal 5V      Features !   *1*1 !        !     !    !   


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    hctl 3

    Abstract: 0.8um HCTL-2000 HCTL-2001 HCTL-2032 hctl 2020
    Text: HCTL-2001 / 2017 / 2021 Differences between HCTL-2001 / 2017 / 2021 and HCTL-2000 / 2016 / 2020 Application Note 5263 HCTL-2000/2016/2020 is Motion Control decoder/ counter that was designed many years ago on a 0.8um processes. Due to lack of support on old wafer


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    PDF HCTL-2001 HCTL-2000 HCTL-2000/2016/2020 HCTL-2001/2017/2021. HCTL-2001/2017/2021 HCTL-2032/2022, HCTL2000/2016/2020 HCTL-200yte hctl 3 0.8um HCTL-2032 hctl 2020

    400NS

    Abstract: HT6576A X3-131-1986 X313 t2d70
    Text: HT6576A Advanced SCSI CHIP Features • • • • • Support the ANSI X3.131-1986 standard Asynchronous transfer rate to 5 Mbyte/sec Support initiator and target mode 0.8um CMOS process • • On chip 48mA single-ended drivers and receivers Non internal clock needed


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    PDF HT6576A 44pins 400NS HT6576A X3-131-1986 X313 t2d70

    1P2M

    Abstract: No abstract text available
    Text:       0.8um 1P2M Logic 5V      Features !   *1*1 !        !     !    !    !"#$% 


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    PDF

    TDD 1605

    Abstract: lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S PLCC44 SEL24 STLC3040
    Text: STLC3040 S U BSC R IBER LINE INTERFACE CODEC FILTER, CO FISLIC PRELIM IN ARY DATA PLCC44 O RDERING NUM BER: STLC3040FN Figure 1 : Pin Connection Top view o > [ « [ <° \ Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­


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    PDF STLC3040 PLCC44 TDD 1605 lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S SEL24 STLC3040

    Untitled

    Abstract: No abstract text available
    Text: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS


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    PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 402A7S7

    0693M

    Abstract: No abstract text available
    Text: r=7 SGS-THOMSON * 7 / . RülDœilLiOTWniêi STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PR ELIM IN ARY DATA • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count.


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    PDF STLC3040 97TL3 PLCC44 0693M

    GM76C8128all

    Abstract: GM76C8128A GM76C8128
    Text: LG Semicon Co.,Ltd. GM76C8128A/AL/ALL 131,072 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The G M 76C 8128A/AL/ALL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. U sing a 0.8um advanced CMOS technology, it provides high speed operation with


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    PDF GM76C8128A/AL/ALL 128A/AL/ALL 70/85/100ns. GM76C8128A/AL/ALL 32-pin GM76C8128all GM76C8128A GM76C8128

    LRX 4311

    Abstract: 2CR3 TL257A XF MR 60hz trans battery fsc
    Text: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PRELIMINARY DATA Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. Low external com ponent count. Over-sampling A/D and D/A conversion.


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    PDF STLC3040 12kHz/16kHz LRX 4311 2CR3 TL257A XF MR 60hz trans battery fsc

    GM76C256all

    Abstract: GM76C256A GM76C256AL/ALL GM76C256A-TO GM76C256AL
    Text: GM76C256AL/ALL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM 76C256A is a 262,144 bits static random access memory organized as 32,768 words by 8 bits Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle


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    PDF GM76C256A 55/70/85ns. GM76C256AL/ALL 28-pin 600mil) 450mil) GM76C256AL/ALL GM76C256all GM76C256A-TO GM76C256AL

    LRX 4311

    Abstract: 42dh TL258A
    Text: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count. ■ Over-sampling A/D and D/A conversion.


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    PDF STLC3040 12kHz/16kHz 97TL3 PLCC44 LRX 4311 42dh TL258A

    GM76C8128all

    Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
    Text: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS


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    PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 70/8uuULJUUUU Gi\176C8128A/AL/ALL GM76C8128all 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85

    76C8128

    Abstract: gm76c8128a GM76C8128all
    Text: GM76C8128L/LL LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Pin Configuration Description The G M 76C 8128L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with


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    PDF GM76C8128L/LL 70/85/100ns. 8128L/LL 32-pin 600mil) 525mil) GM76C8128L/LL 047fl 76C8128 gm76c8128a GM76C8128all

    Untitled

    Abstract: No abstract text available
    Text: R E V 1S I O N S 908-43200 DRAWING NOTES: TH 1 R D I. 2. DO NOT S C A L E MATERIAL AND BODY: CONTACT: CAP: FERRULE: INSULATOR THIS ANGLE REV NO. PROJ. <§> DRAWING. FINISH: BRASS, GOLD PLATED .000030 [0.8UM] MIN THICK OVER NICKEL BRASS, GOLD PLATED (.000030


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    PDF \MMCX\908-43200

    Untitled

    Abstract: No abstract text available
    Text: GM76C512/L/LL G oldStar 65,536 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with


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    PDF GM76C512/L/LL GM76C512/L/LL 32-pin 600mil)

    Untitled

    Abstract: No abstract text available
    Text: G M 7 6 C 8 128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON C O , LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS


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    PDF 28A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) GM76C8128A/AL/ALL

    GM76C256B

    Abstract: No abstract text available
    Text: LG Semicon Co.,Ltd. Description GM76C256BL/BLL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle


    OCR Scan
    PDF GM76C256BL/BLL GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 450mil)

    76C8128

    Abstract: gm76c8128 76C8128/L/LL
    Text: GM76C8128/L/LL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 76C8128/L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with


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    PDF GM76C8128/L/LL 76C8128/L/LL 70/85/100ns. 32-pin 600mil) 6C8128/L/LL 76C8128 gm76c8128