3F000FH Search Results

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

AMD marking CODE flash AM29DL323DB

Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Contextual Info: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.

S3FC40D

Abstract: IRR36 p64s CalmRISC-16
Contextual Info: S3CC40D/FC40D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

MX29LV320DT

Abstract: MX29LV320DB MX29LV320DBTI-70G MX29LV320DBTI MX29LV320DTTI-70G MX29LV320D 29LV320 3F000Fh mx29lv320dbxbi-70g MX29LV320DTTI
Contextual Info: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.2, OCT. 02, 2009 1 MX29LV320D T/B Contents FEATURES. 5

DS42553

Contextual Info: DS42553 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: R MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10 years data retention

Contextual Info: Am29LV320D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV320D Data Sheet For new designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path for this device. Please refer to the S29AL032D Datasheet for specifications and ordering information. The following document specifies Spansion memory products that are now offered by both Advanced

Contextual Info: Am29LV320D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

l320dt90v

Abstract: L320DB90 L320DT12V
Contextual Info: Am29LV320D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES TM • Secured Silicon (SecSi Sector) — 64 Kbyte Sector Size; Replacement/substitute devices (such as Mirrorbit) have 256 bytes.

KH29LV320

Abstract: KH29LV320D KH29LV320DBTC
Contextual Info: ADVANCED INFORMATION KH29LV320D T/B KH29LV320D T/B DATASHEET P/N:PM1398 REV. 0.01, MAY 20, 2008 1 KH29LV320D T/B Contents FEATURES .

mx29lv320db

Contextual Info: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.0, AUG. 14, 2008 1 MX29LV320D T/B Contents FEATURES . 5

Contextual Info: ADVANCED INFORMATION MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle

29LV320

Contextual Info: MX29LV320C T/B Contents FEATURES . 4 GENERAL DESCRIPTION . 5

Contextual Info: ADVANCE INFORMATION Am29LV320D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Security on Silicon (SecSi Sector): Extra 64 Kbyte (32 Kword) sector — Factory locked and identifiable: 16 bytes (8 words)

S3FC34D

Abstract: CalmRISC-16
Contextual Info: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.2 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

s3cc

Abstract: S3CC34D calmRISC16 S3FC34D MP-64 MDS 2310 manual S3FC CalmRISC-16 SAMSUNG WAFER Date Code Formats samsung SSR
Contextual Info: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

AM29DL32XD

Abstract: d323db 324D S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J AM29DL322DB120
Contextual Info: Am29DL322D/323D/324D Data Sheet For new designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL032J supersedes Am29DL32xD and is the

MX29LV320ATTC-70G

Contextual Info: ADVANCED INFORMATION MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle

mp9141

Abstract: S3FC11B calmRISC16 RP2D1 MP2338 ISO-14001 ADCON10 sd2150 CalmRISC-16 MAC2424
Contextual Info: S3CC11B/FC11B CalmRISC 16-Bit CMOS MICROCONTROLLER USER'S MANUAL Revision 1.20 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

Am29LV320D sleep mode application

Abstract: AM29LV320DB90R AM29LV320DT90R
Contextual Info: Am29LV320D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

AM29LV320DB90R

Abstract: AM29LV320DT90R AM29LV320DT120
Contextual Info: Am29LV320D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

MX29LV32

Contextual Info: ADVANCED INFORMATION MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle