3E3 TRANSISTOR Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC143ZM/ DTC143ZE/DTC143ZUA DTC143ZKA /DTC143ZSA/ DTC143ZCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC144EM/DTC144EE/DTC144EUA DTC144ECA/DTC144EKA/DTC144ESA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors EMD12 SOT-563 General purpose transistors (dual transistors) FEATURES z Both the DTC144E chip and DTA144E chip in a package. z Mounting possible with SOT-563 automatic mounting machines.

BU-406D

Abstract: core 3E1 lg crt tv circuit diagram bu407d
Contextual Info: 7923 E 3 7 _ 00 2 Ô 5 3 7 3 _ * rT \3 3 > -V _ \ f Z 7 S G S -T H O M S O N ^ 7 # [M01fami ¥[R«0 gS S G S-THOMSON BU406D B U 407D /B U 408D BDE » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406D, BU407D, and BU408D are silicon pla­ nar epitaxial NPN transistors with integrated dam­

BU408

Abstract: BU406
Contextual Info: 7 T 2 3 237 0 0 5 & 5 3 1 ^ SGS-THOMSON [*^ i[LJOT ò KS S G S-TH0MS0N H ~~T' 3 3 S \ BU406 BU406H/BU408 30E » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406, BU406H, and BU408 are silicon epitax­ ial planar NPN transistors in Jedec TO-220 plastic package. They are fast switching, high voltage de­

Contextual Info: I I N AUER PHILIPS/DISCRETE b^E J> • APX bbS3^31 DD2fl33D 7M5 _ bU4U6P BU407F JV _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators

BU406

Abstract: BU407 transistor BU406 bu406 ru 8U407
Contextual Info: N AMER PHILIPS/DISCRETE bTE » • bbSB'm 00Sfl22E b72 « A P X Philips Product specification Silicon diffused power transistors DESCRIPTION QUICK REFERENCE DATA High-voltage, high-speed,

407f

Abstract: 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors
Contextual Info: PHILIPS INTE RNAT ION AL M5E D E3 711Qfi5ti OGaOôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators

chip die npn transistor

Contextual Info: WILLAS FM120-M+ DTC143ZCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ DTC144ECATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance.

Contextual Info: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings

Contextual Info: WILLAS FM120-M+ DTC144EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features • Low profile surface mounted application in order to

lg crt tv circuit diagram

Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
Contextual Info: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS

8U406

Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
Contextual Info: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators

RCA8350B

Contextual Info: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602

DTC144EM

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# DTC144EM Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"

n20 n21 fet

Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Contextual Info: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital

HRF3205 equivalent

Abstract: data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205
Contextual Info: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: •dering number: EN 3936A Monolithic Linear IC LA7375 No. 3936 A Recording and Playback Amplifier for VHS Video Recorders Overview Package Dimensions The LA7375 is a recording and playback amplifier for VHS-format video tape recorders. It features a two-chan­

UMD22N

Contextual Info: MCC TM Micro Commercial Components UMD22N
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Both the DTA143Z chip and DTC143Z chip in a package Mounting possible with SOT-363 automatic mounting machines.