Untitled
Abstract: No abstract text available
Text: User's Guide SBOU047 – April 2007 DEM-OPA-SSOP-3C Demonstration Fixture 1 Description The DEM-OPA-SSOP-3C demonstration fixture is a non-inverting configuration, unpopulated printed circuit board PCB for high-speed triple operational amplifiers in SSOP-16 packages with flow-through
|
Original
|
PDF
|
SBOU047
SSOP-16
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AP3842C/3C/4C/5C General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external
|
Original
|
PDF
|
AP3842C/3C/4C/5C
AP3842C/3C/4C/5C
AP3846-21-6485
|
2N3054
Abstract: No abstract text available
Text: SVNTC Power Transistors 2N3054 Silicon NPN Transistors 1B 2E 3C Features •With TO-66 package ·Designed for general-purpose switching and amplifier applications Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER
|
Original
|
PDF
|
2N3054
2N3054
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
PDF
|
OT-363
BC857S
OT-363
-10mA
-100mA
-10mA
100MHz
200Hz
|
FMMTA20R
Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 MARCH 1995 PARTMARKING DETAIL COMPLEMENTARY TYPE FMMTA20 1C FMMTA20R 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO
|
Original
|
PDF
|
FMMTA20
FMMTA20R
FMMTA70
100mA,
100MHz
140kHz,
FMMTA20R
FMMTA20
FMMTA70
DSA003703
FMMTA20R-3C
|
2SC1030
Abstract: No abstract text available
Text: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage
|
Original
|
PDF
|
2SC1030
2SC1030
|
sot89 MARKING 3C
Abstract: transistor KIA431BF GRADE KIA431B sot-89
Text: SEMICONDUCTOR KIA431BF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3C KIA431BF * Grade - - Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only
|
Original
|
PDF
|
KIA431BF
OT-89
sot89 MARKING 3C
transistor
KIA431BF
GRADE
KIA431B
sot-89
|
Untitled
Abstract: No abstract text available
Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUW58 Silicon NPN Transistors IB 2E 3C Features With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage
|
Original
|
PDF
|
BUW58
100mA;
|
012-J
Abstract: No abstract text available
Text: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)
|
Original
|
PDF
|
|
smd code marking rf ft sot23
Abstract: TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR CMBT5179 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3C Designed for use in Low Noise UHF/VHF Amplifiers
|
Original
|
PDF
|
ISO/TS16949
CMBT5179
OT-23
15omers
C-120
CMBT5179Rev290503E
smd code marking rf ft sot23
TRANSISTOR SMD MARKING CODE JC
smd rf transistor marking
SMD TRANSISTOR MARKING 3C
rf amplifier sot23 5 marking 14 CD
jc SMD code sot23
"Marking code" SUs SOT-23
6 pin TRANSISTOR SMD CODE p
transistor smd marking NA sot-23
smd marking code transistor rf
|
NV73A2A
Abstract: No abstract text available
Text: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)
|
Original
|
PDF
|
|
324 3842
Abstract: 3842 PWM power supply application note ua 3842 TRANSISTOR AZ431 AP384XC PWM IC 8 PIN DIP 3842 ap3842 3C15
Text: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external
|
Original
|
PDF
|
AP384XC
AP3842C/3C/4C/5C
AP3842C
AP3844C
324 3842
3842 PWM power supply application note
ua 3842
TRANSISTOR AZ431
AP384XC
PWM IC 8 PIN DIP 3842
ap3842
3C15
|
Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 - MARCH 1995_ ' PARTMARKING DETAIL - FMMTA20 - 1C FMMTA20R - 3C COMPLEMENTARY TYPE FMMTA70 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
FMMTA20
FMMTA20
FMMTA20R
FMMTA70
100mA,
100MHz
140kHz,
300us.
|
BF195
Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Text: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn
|
OCR Scan
|
PDF
|
BF195
O-92-2
BF196
BF197
BF198
CD9011F
CD9011G
CD9011H
BF494
BF494 bf199
BF237
BF238
BF496
BF254-3
BF254-4
C0639
|
|
|
Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3C 03H D Medium Power Surface Mount Products Motorola Preferred Device C om plem entary TMOS Field E ffect Transistors COMPLEMENTARY DUAL TMOS POWER FET
|
OCR Scan
|
PDF
|
MMDF3C03HD/D
b3b72S4
|
Darlington pair
Abstract: Darlington pair IC schematic ULN2800A-Series ULN2804A
Text: ULN2804A DARLINGTON TRANSISTOR ARRAY SLLS311 -J U N E 1998 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY 500-mA-Rated Collector Current Single Output N DUAL-IN-LINE PACKAGE (TOP VIEW ) High-Voltage Outputs . . . 50 V 1C Output Clamp Diodes 2C 3C
|
OCR Scan
|
PDF
|
ULN2804A
SLLS311
500-mA-Rated
ULN2800A-Series
Darlington pair
Darlington pair IC schematic
ULN2800A-Series
|
"to-98" package
Abstract: 2N5172
Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a
|
OCR Scan
|
PDF
|
2N5172,
MPS5172,
PN5172,
2N6076
PN5172
obser10V,
"to-98" package
2N5172
|
Untitled
Abstract: No abstract text available
Text: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe W erte V ces Maximum rated values 600 V 300 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,045 3C/W RthJC DC, pro Zweig / per arm
|
OCR Scan
|
PDF
|
3403EcI7
|
sot323 marking code VL
Abstract: PMSS3906 transistor p06
Text: • b bS 3cì31 0025127 ÒSI « A P X N AMER PHILIPS/DISCRETE b7E Philips S em iconductors P roduct specification PNP general purpose transistor PMSS3906 FEATURES • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, primarily intended for use
|
OCR Scan
|
PDF
|
PMSS3906
OT323
MAM096
2St131
sot323 marking code VL
PMSS3906
transistor p06
|
transistor rc4
Abstract: MMBT5179 MPS5179
Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common
|
OCR Scan
|
PDF
|
MPS5179
MMBT5179
OT-23
tS0113D
transistor rc4
MMBT5179
MPS5179
|
RFM18N08
Abstract: RFM18N10 RFP18N08 RFP18N10
Text: cil B Ë | 3Û7SD01 001Û177 4 3875081 G E SÖLID STATE 01E 18177 D T~3C ~ 3 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 File Number 1446 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A, 80 V — 100 V ros(on): 0.1fi Features:
|
OCR Scan
|
PDF
|
RFM18N08,
RFM18N10,
RFP18N08,
RFP18N10
RFM18N08
RFM18N10
RFP18N08
RFP18N10*
|
FF100R12KF2
Abstract: No abstract text available
Text: FF 100 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,095 3C/W Rthjc DC, pro Baustein / per module 0,19 DC/W DC, pro Zweig / per arm 0,04 C/W RthCK pro B a u ste in /p e r module
|
OCR Scan
|
PDF
|
FF100R12KF2
|
8C337
Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Text: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.
|
OCR Scan
|
PDF
|
BC337xc.
BC337A
BC338
8C337,
BC337A,
BC338
8C327,
3C327A
BC328
8C337
8C327
8C337-16
3C337
BC337A
sc337
BC337
|
bc 303 transistor
Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in
|
OCR Scan
|
PDF
|
|
