3AS TRANSISTOR Search Results

3BS transistor

Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

3BS transistor

Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

TO205AD

Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Contextual Info: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications

KRC401

Abstract: KRC402 KRC403 KRC404 KRC405 KRC406
Contextual Info: KEC KRC401KRC406 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.

3BS transistor

Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.

KRC102M transistor

Abstract: Transistor KRC102M KRC104M KRC102M 106M KRC105M KRC106M KRC101M KRC103M
Contextual Info: KRC101MSEMICONDUCTOR KRC106M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: TT T O S H I B A -CDISC R E T E / O P T 01 ßFliaTTaSQ 9097250 TOSHIBA <DISCRETE/OPTO> 99D 16804 TOSHIBA F IE L D SEMICONDUCTOR QQltäQ4 DT-39-\3 E FFE C T TRANSISTOR Y T F 2 5 0 SILIC O N N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

C2335

Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
Contextual Info: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN

BC 511

Abstract: Q62702-C2295 MARKING 3FS
Contextual Info: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,

bc856

Abstract: bc 856
Contextual Info: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,

C1507

Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
Contextual Info: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,

bc847bc

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,

Contextual Info: SIEMENS BC 856 . BC 860 PNP Silicon AF Transistors F eatures • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: B C 846, BC 847,

BC850

Abstract: BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

H12E

Abstract: VSO05561 marking 3GS 858W
Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2

BC sot23

Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
Contextual Info: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN

bc 212 equivalent

Abstract: MARKING CODE 21E SOT323
Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,

BC846

Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

BC846W

Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

BC856B E6327

Abstract: BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846
Contextual Info: BC856.BC860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN

Contextual Info: TOSHIBA íDISCRETE/OPTO} _ ^ 9 0 97 25 0 TOSH IB A ¿/oSuhu ooibafl4 i DISCRETE/OPTO 90D 16284 DT-33-3S TOSHIBA OTR MODULE M G 2 0 0 H 2 C K 1 SEMICONDUCTOR SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

H12E

Abstract: 4Gs SOT23 3JS 1.5-R bc857b infineon 3ls sot23
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

Contextual Info: BC856W.BC860W PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN