860C Search Results

NI-860C3

Contextual Info: FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. T IT L E : NI-860C3 MECHANICAL OUTLINE PR IN T VERSION NOT TO SCALE DOCUMENT NO: 98ARH99040A REV: G CASE NUMBER: 375G-04 20 JUL 2005 STANDARD: NON-JEDEC NOTES: 1. CONTROLLING DIMENSION: INCH 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994.

Contextual Info: DIGITRON SEMICONDUCTORS MURH805CT-860CT 8A ULTRA FAST RECOVERY RECTIFIER MAXIMUM RATINGS Rating Symbol MURH 805CT 810CT 820CT 840CT 860CT 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 Unit Peak repetitive reverse voltage Maximum RMS voltage DC blocking voltage

SVM7860

Abstract: 7860C SVM7860C OSC1 VR-182
Contextual Info: PF283-06 S V M 7 860Cseries Melody 1C • 2 Sound Sources #O ne Melody • 1 2 7 Words Melody ROM •DESCRIPTION The SVM 860C Series C M O S IC produce melodies or alarm tones from a preprogrammed ROM. The ROM has a capacity of 127 words and can store 1 melody from two sound sources with an envelope.

Contextual Info: 860C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage6.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage8.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25

2sa15

Abstract: WY 549
Contextual Info: O rd e rin g n u m b e r: EN 2 1 6 6 iS A \Y O 2SA1521/2SC3915 No.2166 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

UTC 1316

Abstract: 74hc4060 xtal LM358 RF receiver module HD44100 HD44780 utc 1240 a can1a350ek 940 629 MOTOROLA 220 TBA 240B utc 1018 hc11k
Contextual Info: MOTOROLA Order this document by AN1597/D SEMICONDUCTOR APPLICATION NOTE AN1597 Longwave Radio Data Decoding using an HC11 and an MC3371 Prepared by: P. Topping AMCU Applications Engineering Motorola Ltd., East Kilbride INTRODUCTION The BBC’s Radio 4 198 kHz Longwave transmitter carries

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: SB820CT – SB8100CT WTE POWER SEMICONDUCTORS 8.0A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G

820CT

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MURH805CT THRU 860CT Features • • • Superfast switching time for hight efficiency Low reverse leakage current

tantulum capacitor

Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MURH805CT THRU 860CT Features • • • Superfast switching time for hight efficiency Low reverse leakage current

marking WB4

Abstract: NIPPON CHEMI nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

MURHB860CT

Contextual Info: MCC MURHB805CT THRU 860CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 8 Amp Super Fast High Current Capability Low Reverse Leakage Low Forward Voltage Drop

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 _ • Complement to BC846 . BC8S0 SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

A72D SMD

Abstract: A72D B62000 gbr relais CC225B HC11 68HC24 A600 B600 B606
Contextual Info: Hip Hop HC11 1. Assembler-Tricks für den 68HC11 von Oliver Thamm Assembler-Tricks für den 68HC11 Hip Hop HC11 1.1. Über die Kunst, ein Byte herbeizuzaubern Die geschickte Ausnutzung vorhandener Ressourcen, das Sparen von Speicherplatz und die Minimierung von Ausführungszeiten war das Bestreben der Programmierer seit der

b 108 b

Contextual Info: 2.0mm DUAL ROW SOCKET S.M.D. BOTTOM ENTRY TYPE 2.25mm PLASTIC HEIGHT 200189FA Series Specifications: 8-60Circuits Insulator material : Black High Temp . Plastic Operating Temp.Range 2.0 mm Order Information : Phosphor Bronze Plating : Full Gold Plated Max. Current Rating

mip 2h2

Abstract: Solid state CCIR ca 152 sh ei 33ca RGB565 to rgb888 PMB 8888 660-227 331 dim hee nv tag 8514 SERVICE MANUAL tv sharp A205D
Contextual Info: Advance This document contains information on a product under development. Information is not warranted and is subject to change. Bt2166 High-Performance PCI/AGP 3D Video/Graphics Controller Applications Feature Summary • • • • • • • Microsoft Windows 95 Direct3D accelerator

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

4A14H

Abstract: SRN8
Contextual Info: User Manual V850E2/ML4 32 User’s Manual: Hardware 32-bit Single-Chip Microcontroller V850E2/Mx4 microcontrollers PD70F4021 μ PD70F4022 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 PAR TM AR KIN G D ETAILS:BC 856A - 3A B C 858C - B C 856B - 3B BC 859A - 4A 3L B C 857A - 3E BC 859B - 4B B C 85 7 B - 3F B C 859C - 4C B C 85 7 C - 3G B C 8 6 0 A - 4E