3624T Search Results

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

Contextual Info: : Jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY ¡S J y m m Integrated De vice Technology, Inc. FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

IDT71V416

Abstract: IDT71V416L IDT71V416S SO44-2
Contextual Info: PRELIMINARY IDT71V416S IDT71V416L 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT Integrated Device Technology, Inc. FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

PortDG0411-US

Abstract: Portable Device Interfaces circuit protection
Contextual Info: 2011 Protection Design Guide for Portable Device Interfaces www.semtech.com Table of Contents Portable Device Interfaces Protection Section I: Introduction & Background Trends in circuit protection > 4 Semtech advantages process & technology > 5 Threat environment > 6

Contextual Info: 3624T RailClamp ESD Protection for uUSB Interfaces PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to RailClamp® TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data

ESD Protection for uUSB Interfaces

Abstract: RCLAMP3624T 3624T
Contextual Info: 3624T RailClamp ESD Protection for uUSB Interfaces PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to RailClamp® TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT PRELIMINARY IDT71V416S IDT71V416L In teg ra ted D e v i l e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

SO44-2

Abstract: IDT71V416 IDT71V416L IDT71V416S
Contextual Info: PRELIMINARY IDT71V416S IDT71V416L 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT Integrated Device Technology, Inc. FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT PRELIMINARY IDT71V416S IDT71V416L FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times — 10/12/15ns • One Chip Select plus one Output Enable pin

PortDG0411

Abstract: PORTDG0411-AG
Contextual Info: 2011 Protection Design Guide for Portable Device Interfaces www.semtech.com Table of Contents Portable Device Interfaces Protection Section I: Introduction & Background Trends in circuit protection > 4 Semtech advantages process & technology > 5 Threat environment > 6