3330 TRANSISTOR Search Results

Q81 tempco resistor

Abstract: dioda zener 24v On Chip Systems 3335 Pole/Q81 tempco resistor
Contextual Info: 25E D • ¿ 7* 1 04 5 7 QQ0 0 2 b 7 =1 ■ Dual Voltage Controlled Amplifier The CEM 3330 and CEM 3335 art dual, high performance, voltage controlled amplifiers intended for electronic musical instrument and professional audio application!. For thé 3330, each amplifier includes

ntc20

Abstract: 2SC4459
Contextual Info: O rdering n u m b e r:EN 3330 ._ 2SC4459 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F e a tu re s • High breakdown voltage, high reliability • F ast switching speed • Wide ASO • Adoption of MBIT process • Micaless package facilitating mounting

2SC4459

Contextual Info: Ordering number:EN3330 NPN Triple Diffused Planar Silicon Transistor 2SC4459 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC4459

Abstract: ITR07037 ITR07038 ITR07039 ITR07040
Contextual Info: Ordering number:ENN3330 NPN Triple Diffused Planar Silicon Transistor 2SC4459 500V/10A Switching Regulator Applications Package Dimensions unit:mm 2039D [2SC4459] 16.0 3.4 5.6 3.1 22.0 2.0 21.0 4.0 2.8 2.0 1.0 2.0 20.4 • High breakdown voltage, high reliability.

P1086

Contextual Info: 9-97 F 10 Small Outline Surface Mount Package Devices P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type VGS(OFF) I gss bvgss Max Min @IG (V) (mA) (nA) @Vgs (V) Min toss Conditions lim its Max Vos Id Min Max @VDS (nA) (mA) (mA) (V) (V) (V) (V)

SMPJ177

Abstract: SMP3330 PJ99 P1086
Contextual Info: 8-94 F 10 Small Outline Surface Mount Package Devices P-C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) • g ss bvg ss Limits Min (V) m Max @Vgs Min (nA) (V) (V) @IG Id s s Conditions Max Vds b Min Max @VDS (V) (V) (nA)

ZTX958

Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo

ztx958

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 IS S U E 3 - J U N E 94 FEATURES * * * * * - 0.5 A m p continuous current U p to 1.5 A m p s peak current Very low saturation voltage Excellent gain characteristics up to 1 A m p

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSUE 3 – JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line

8D438

Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSU E 3 - J U N E 94_ — FEATURES * 0.5 Am p continuous current * Up to 1.5 A m ps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp

Compact FUSION Brochure

Contextual Info: Line B COMPACT FUSION SCR POWER CONTROLLERS 1 Compact FUSION Brochure Rev 3.50 www.ccipower.com 1-800-765-2799 Control Concepts Inc., 2013 FEATURES Auto-Ranging Input Voltage 24 - 600 VAC, 45 - 65 Hz AC Output 10 - 160 Amps Internal Class-T Fusing Blown Fuse Indicator

PJ99

Contextual Info: INTER F E T CORP 2bE D • 4äSbflöfl 00QG241 T ■ T 'Z '7 - * ^ rv 3 7 - 3 . S _ C4 P Channel JFETs SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrica! Characteristics at TA = 25°C VcSioni Viwucss i.i iG nA| Ul Vqs (V

IC-3330

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1523 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION

VDMOS DEVICE

Contextual Info: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS devices, started in SGS in 1977.

Contextual Info: Display Boards For Show & Tell Display boards make an excellent visual reference to show to your customers, suppliers and staff members. Everything you need is represented on 7"x8" display boards. Wall mount with velcro or use optional table top stands. Order individually or the complete Set of 4.

VDMOS

Abstract: VDMOS DEVICE
Contextual Info: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS

TRANSISTOR A30

Abstract: A30 TRANSISTOR Intel 8237A
Contextual Info: GFI2370A GFI2370A GFI2370A DMA CONTROLLER GENERAL DESCRIPTION : THE GFI2370A IS COMPATIBLE IN FUNCTIONALITY WITH THE INTEL 8237A 4-CHANNEL PROGRAMMABLE DMA CONTROLLER. THE PERFORMANCE IS MUCH IMPROVED OVER THE STANDARD PART. FOR A DETAILED FUNCTIONAL DESCRIPTION, SEE THE INTEL DATA BOOK.

TRANSISTOR bd 147

Abstract: BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45
Contextual Info: MOTOROLA SC X S T R S /R F 7 ^ 3 3 -o *f MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA D ARLINGTON COMPLEMENTARY SILICO N POWER TRANSISTORS High DC Current Gain — hpg » 2500 typ. @ lc “ 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fe.3b?2S4 GOÖbSMl 1 | M A X IM U M RATINGS Symbol Value U nit Collector-Emitter .Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc ic 1.6 Ade Rating Collector Current — Continuous Total Device Dissipation

CD4511BE BCD to 7 SEGMENT DECODER

Abstract: code marking ti map CMOS BCD-to-7-Segment LED Latch Decoder Drivers cd4511b
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS072B – Revised July 2003 Lamp Test LT , Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity-modulate it, and store or strobe a BCD code, respectively.

UPA831TF

Abstract: NE856
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA

Contextual Info: CM450DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD S-Series Module 450 Amperes/1200 Volts A D L (4 PLACES) K K K V G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Q P P X Z F Y U Q V

HA5160-5

Abstract: 5162-5 HA5162-5 ha-5162
Contextual Info: 3 h a -5160, HA-5162 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifiers March1993 Features Description • Wide Gain Bandwidth Ay £ 1 0 .100MHz • High Slew Rate. 120V/|is