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    D209

    Abstract: 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209
    Text: 2SA1766 注文コード No. N 3 1 8 2 C 三洋半導体データシート 半導体ニューズ No.N3182B をさしかえてください。 2SA1766 PNP エピタキシャルプレーナ型シリコントランジスタ 高 hFE, 低周波一般増幅用 特長


    Original     		2SA1766 N3182B 250mm2 200mA 33110LA --500mA --300mA ITR04530 ITR04534 D209 2SA1766 ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 31824 D-209 PDF

    2SA1766

    Abstract: ITR04527 marking al
    Text: 2SA1766 Ordering number : EN3182C SANYO Semiconductors DATA SHEET 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 .


    Original     		2SA1766 EN3182C 2SA1766 ITR04527 marking al PDF

    22505TN

    Abstract: 1A marking 2SC5069 ITR07888
    Text: 2SC5069 Ordering number : EN4509A SANYO Semiconductors DATA SHEET 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver Applications Features • • • • • High current capacity. Adoption of MBIT process. High DC current gain.


    Original     		2SC5069 EN4509A 22505TN 1A marking 2SC5069 ITR07888 PDF