330MI Search Results

PCN10023

Abstract: Simtek STK14C
Contextual Info: Simtek Corporation 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA Fax: 719 531 9481 Tel: 719 531 9444 www.simtek.com Product Change Notification PCN10023 Dated: 24 August 2005 ISSUE Lot to lot variation in Moisture Sensitivity Level performance at 260C in 28 lead, 330mil SOIC package and 28/32

SOIC28

Abstract: SOIC-28
Contextual Info: Conv DIL28/SOIC28 Z 330 - универсальный адаптер для микросхем в корпусе SOIC28 c ZIF колодкой, ширина корпуса 330mil. http://www.elnec.com/pics/convert/con0145b.jpg

AS6C6264

Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

BS62UV256

Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
Contextual Info: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns

AS6C62256-55PCN

Abstract: AS6C62256-55SIN AS6C62256
Contextual Info: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

GLT6200L080LLI-70ST

Contextual Info: GLT6200L08/M08/N08 ADVANCED 256K x 8 Super Low Power & Low Voltage SRAM FEATURES ◆ Organization: 256K x 8 ◆ Low Data Retention Voltage: 1.5 V min ◆ Power Supply Voltage ◆ Maximum 2 µA Standby Current ◆ Three-state output status and TTL compatible

1N5817

Abstract: M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28
Contextual Info: M 4 0 Z 111 M 4 0 Z 111V NVRAM CONTROLLER for up to TWO LPSRAM • CONVERT LOW POWER SRAMs into NVRAMs ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE ■ CHOICE of SUPPLY VOLTAGES and

44-PIN

Abstract: M48T129V M48T129Y
Contextual Info: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and

Contextual Info: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY53C464LS

Abstract: HY53C464
Contextual Info: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

M48Z35

Abstract: M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28
Contextual Info: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZERO PO W ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES

M48T35Y

Abstract: M48T35 SOH28
Contextual Info: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

M41ST84W

Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
Contextual Info: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU

M48T59

Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
Contextual Info: M48T59 M48T59Y/M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■

AN1572

Abstract: M41T94 M4TXX-BR12SH SOH28 ST10
Contextual Info: M41T94 Serial Real Time Clock with 44Bytes NVRAM and Reset Feature summary • Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional

M40Z300

Abstract: M40Z300W M4ZXX-BR00SH SOH28
Contextual Info: M40Z300 M40Z300W 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE

RC64475

Contextual Info:



   
 
               
 

  ◆ Implements MIPS-III Instruction Set Architecture ISA 3.3V I/O ◆ Software compatible with entire RISController Series of Embedded Microprocessors

AS6C6264

Abstract: AS6C6264-55PCN AS6C6264-55SIN 6264 28pin alliance AS6C6264 SRAM 6264 AS6C6264-55SCN CI 6264 as6c6264-55stin
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

HY62WT08081E-DGC

Abstract: HY62WT08081E HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI
Contextual Info: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA

GLT4160L04

Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
Contextual Info: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Nov 2001 Rev.3.2 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page

4 pin crystal 1mhz oscillator of KDS

Abstract: cei crystal oscillator clock M41T315V M41T315W M41T315Y M4TXX-BR12SH SOH28 KDS 1mhz oscillator KDS 32.768 KHz crystal for RTC
Contextual Info: M41T315Y* M41T315V/W SERIAL ACCESS PHANTOM RTC SUPERVISOR FEATURES SUMMARY • 3.0V, 3.3V, OR 5V OPERATING VOLTAGE ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, and YEARS ■ AUTOMATIC LEAP YEAR CORRECTION

AN923

Abstract: M48T35 M48T35Y SOH28
Contextual Info: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME

M48T58

Abstract: M48T58Y SOH28
Contextual Info: M48T58 M48T58Y 64 Kbit 8Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME

quartz kds

Abstract: KDS 32. 768 KHZ crystal KDS 48 MHZ crystal oscillator KDS 8 MHZ crystal KDS Crystals 32.768 BR1225 BR1632 M41T56 SOH28 kds 2 pin crystal oscillator 4 MHz
Contextual Info: M41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM • 5V ±10% SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC POWER-FAIL DETECT and SWITCH CIRCUITRY