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    Infineon Technologies AG S25FL512SAGMFIG11

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    DigiKey S25FL512SAGMFIG11 Tube 256 1
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    Avnet Americas S25FL512SAGMFIG11 Tube 171 53 Weeks, 1 Days 1
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    Mouser Electronics S25FL512SAGMFIG11 472
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    Chip1Stop S25FL512SAGMFIG11 Tube 160
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    Infineon Technologies AG S25FL128SDPMFIG11

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    DigiKey S25FL128SDPMFIG11 Tube 188 1
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    Infineon Technologies AG S25FL512SDPMFIG11

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    DigiKey S25FL512SDPMFIG11 Tube 93 1
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    Infineon Technologies AG S25FL256SAGMFIG11

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    Mouser Electronics S25FL256SAGMFIG11 565
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    Infineon Technologies AG S25FL256SDPMFIG11

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    FIG11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6968e

    Abstract: TF6968E D002P 65a3
    Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9  P RDS(ON), VGS # 9  P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications


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    PDF TF6968E 6968E FIG10-Maximum FIG11- 100ms 6968e TF6968E D002P 65a3

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Six-Pack PTMB75B12 75 A,1200V □ 回 路 図 : CIRCUIT □ 外 形 寸 法 図 : OUTLINE DRAWING 94 80 4-Ø5.5 7-M4 2 3 1 18


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    PDF 12-fasten fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Chopper PRHMB75B12A 75 A,1200V □ 外 形 寸 法 図 : OUTLINE DRAWING 11 2 1 C2E1 1 (E2) 2 (C1) 3 94 80 ± 0 .2 5 12 11 2-Ø 5.5 12 7


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    PDF fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Chopper PRHMB50B12 50 A,1200V □ 外 形 寸 法 図 : OUTLINE DRAWING E2 2 (C1) 3 94 80 ± 0 .2 5 12 11 2 1 2-Ø 5.5 12 7 6 3 12 (C2E1)


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    PDF TC125 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Chopper PCHMB50B12A 50 A,1200V □ 回 路 図 : CIRCUIT □ 外 形 寸 法 図 : OUTLINE DRAWING 12 E2 2 (C1) 3 94 80 ± 0 .2 5


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    PDF TC125 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Six-Pack : CIRCUIT □ 回 路 図 PTMB50B12C 50 A,1200V □ 外 形 寸 法 図 : OUTLINE DRAWING 93.00 4x 15.24= 60.96


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    PDF TC125 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module-Chopper PCHMB50B12 50 A,1200V □ 回 路 図 : CIRCUIT □ 外 形 寸 法 図 : OUTLINE DRAWING 12 11 94 80 ± 0 .2 5 12 11


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    PDF TC125 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742


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    PDF FS6611-DS-11 FS6611 FS6611

    Untitled

    Abstract: No abstract text available
    Text: IGBT SPseries PTMB75B12C SixSix-Pack 75A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range


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    PDF PTMB75B12C fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: PCHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


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    PDF PCHMB75B12 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: PRHMB75B12 IGBT MODULE Chopper 75A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension mm Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


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    PDF PRHMB75B12 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE PDMB75B12 Dual 75A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


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    PDF PDMB75B12 fig11-Tansient

    Untitled

    Abstract: No abstract text available
    Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1


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    PDF LC5830K LC5830K

    TK10203AM9

    Abstract: No abstract text available
    Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


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    PDF TK10203AM9 GC3-L017A TK10203AM9/1 HSON3030C-10 600mW* CM105B105K16K 200mA TK10203AM9

    CM105B104K25A

    Abstract: CT21X5R105K25A TK10202AM9 AP-478
    Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS


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    PDF TK10202AM9 GC3-L008A HSON3030C-8 200mA) 600mW* 1k200mA 8k150mA CM105B104K25A CT21X5R105K25A TK10202AM9 AP-478

    MUN2216

    Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
    Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)


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    PDF MUN2211 SC-59 23-Jan-09 FIG32. FIG33. FIG34. SC-59 MUN2216 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c

    EEEFK1V101AP

    Abstract: d8 d8
    Text: Aluminum Electrolytic Capacitors/ FK Surface Mount Type Series: FK FK Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 2000 h at 105 °C ● Low impedance (40 % to 60 % less than FC series) Miniaturized (30 % to 50 % less than FC series)


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    PDF EE188 Fig-11) EE186 EEEFK1V101AP d8 d8

    EEE1CA101WAP

    Abstract: EEE1CA100AR
    Text: Aluminum Electrolytic Capacitors/ S Surface Mount Type Series: S Type: V S High temperature Lead-Free reflow suffix:A✽ • Features ● Endurance: 85 °C 2000 h ● Vibration-proof product is available upon request.(φ8 mm and larger) ● RoHS directive compliant


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    PDF EEE1HA330UAP EEE1HA330XAP EEE1HA330AP EEE1HA470XAP EEE1HA470UAP EEE1HA470AP EEE1HA101UAP EEE1HA101AP EEE1HA221UAP EE188 EEE1CA101WAP EEE1CA100AR

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitors/TP Surface Mount Type Series: TP TP Type: V High temperature Lead-Free reflow suffix:A✽ • Features ● ● ● ● ● Lower ESR at Low temperature after endurance Endurance: 3000 h at 125 °C(D8 size : 2000 h) Automotive


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    PDF EE188 Fig-11) EE186

    KHB7D5N60F1

    Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
    Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D5N60P1/F1/F2 KHB7D0N60P1 Fig15. Fig16. Fig17. KHB7D5N60F1 KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V

    KHB5D0N50F

    Abstract: KHB5D0N50P KHB5D0N50F2
    Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB5D0N50P/F/F2 KHB5D0N50P Fig15. Fig16. Fig17. KHB5D0N50F KHB5D0N50P KHB5D0N50F2

    KHB019N20F1

    Abstract: KHB019N20F2 KHB019N20P1
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


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    PDF KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1

    CI 3060 elsys

    Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
    Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.


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    PDF KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60

    AN8028

    Abstract: Power Supply Control IC IAN8028 SIP009-P-0000 pulse transformer fet 3B7 transformer
    Text: Panasonic Voltage Regulators AN8028 Self-excitation RCCArtificial ResonanceType Power-supply Supporting 1CforAC-DC Converter Control • Overview The AN8028 is an 1C for controlling the switching power supply, employing the RCC artificial resonance type con­


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    PDF AN8028 AN8028 001Ebfi4 IAN8028 Power Supply Control IC SIP009-P-0000 pulse transformer fet 3B7 transformer