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    32N90B Search Results

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    32N90B Price and Stock

    IXYS Corporation IXGH32N90B2

    IGBT PT 900V 64A TO-247AD
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    IXYS Corporation IXGT32N90B2D1

    IGBT 900V 64A TO-268AA
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    IXYS Corporation IXGH32N90B2D1

    IGBT PT 900V 64A TO-247AD
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    IXYS Corporation IXGR32N90B2D1

    IGBT PT 900V 47A ISOPLUS247
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    TME IXGR32N90B2D1 1
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    Infineon Technologies AG S29GL032N90BFA040

    IC FLASH 32MBIT PARALLEL 48FBGA
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    32N90B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32N90B2

    Abstract: 32n90
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		32N90B2 IC110 O-247 O-268 32N90B2 32n90 PDF

    32N90B2

    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES


    Original     		32N90B2D1 IC110 O-247 32N90B2 PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		32N90B2D1 150OC 150OC; IC110 125OC, 10parameters 30-12AR 0-12A) 0-12A 30-12AR) PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		32N90B2 IC110 O-247 O-268 PDF

    SiS 961

    Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
    Contextual Info: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		32N90B2D1 150OC 150OC; IC110 125OC, 30-12AR 0-12A) 0-12A 30-12AR) SiS 961 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9 PDF

    IXGH 32N90B2D1

    Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
    Contextual Info: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES


    Original     		32N90B2D1 O-247 IC110 IXGH 32N90B2D1 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2 PDF

    32N50

    Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


    OCR Scan     		32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF