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    32N50Q Price and Stock

    IXYS Corporation IXFJ32N50Q

    MOSFET N-CH 500V 32A TO268
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    IXYS Corporation IXFR32N50Q

    MOSFET N-CH 500V 30A ISOPLUS247
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    IXYS Corporation IXFH32N50Q

    MOSFET N-CH 500V 32A TO247AD
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    IXYS Corporation IXFK32N50Q

    MOSFET N-CH 500V 32A TO264AA
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    IXYS Corporation IXFX32N50Q

    MOSFET N-CH 500V 32A PLUS247-3
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    32N50Q Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    32N50Q IXYS HiPerFET Power MOSFETs ISOPLUS247 Original PDF

    32N50Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    125OC

    Abstract: 32N50Q
    Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		32N50Q 32N50Q 125OC 125OC PDF

    32N50Q

    Abstract: 125OC
    Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A


    Original     		32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC PDF

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50 PDF

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions


    OCR Scan     		32N50Q Cto150 T0-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions


    OCR Scan     		32N50Q 32N50Q Cto150 O-247 O-268 PDF

    fast IXFX

    Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q PDF

    30N50

    Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50 PDF

    32N50Q

    Abstract: 4925 B transistor 125OC 30n50 728B1
    Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


    Original     		32N50Q 125OC reserves10 728B1 123B1 728B1 065B1 32N50Q 4925 B transistor 125OC 30n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 32N50Q VDSS ID25 = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		ISOPLUS247TM 32N50Q 125OC 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


    Original     		32N50Q 125OC reserves10 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,


    Original     		30N50Q 32N50Q 32N50 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS HIPerFET“ IXFJ 32N50Q V DSS Power MOSFETs 500 V 32 A ^D cont D DS(on) Q-Class N-Channel Enhancement Mode Avalanche Rated Highdv/dt, Lowtrr, HDMOS Family trr < 0.15 Q 250 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions vv DSS


    OCR Scan     		32N50Q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFJ 32N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V ID cont = 32 A RDS(on) = 0.15 W t rr < 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		32N50Q PDF

    IXYS DS 145

    Abstract: IXYS DS 145 - 16A diode
    Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		32N50Q 32N50Q 125OC IXYS DS 145 IXYS DS 145 - 16A diode PDF

    32N50Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM


    Original     		32N50Q 32N50Q O-247 O-268 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class VDSS ID25 RDS on IXFH 32N50Q IXFT 32N50Q trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		32N50Q 32N50Q O-247 O-268 O-268 PDF

    32N50Q

    Abstract: 30N50Q 125OC 30n50
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient


    Original     		30N50Q 32N50Q 125OC 32N50Q 30N50Q 125OC 30n50 PDF

    125OC

    Abstract: 32N50Q
    Text: IXFR 32N50Q VDSS ID25 HiPerFETTM Power MOSFETs ISOPLUS247TM = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		32N50Q ISOPLUS247TM 125OC 728B1 123B1 728B1 065B1 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A


    Original     		32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		32N50Q 32N50Q 125OC PDF

    IXFR32N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 IXFR32N50 PDF

    32N50Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFK 32N50Q IXFX 32N50Q VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		O-247 32N50Q 32N50Q 247TM O-264 125OC PDF

    32N50Q

    Abstract: BTAA
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C,


    Original     		30N50Q 32N50Q 247TM 32N50Q BTAA PDF