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    32N50C3 Search Results

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    32N50C3 Price and Stock

    Infineon Technologies AG SPW32N50C3FKSA1

    MOSFET N-CH 560V 32A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPW32N50C3FKSA1 Tube 270 1
    • 1 $9.86
    • 10 $9.86
    • 100 $5.838
    • 1000 $4.69812
    • 10000 $4.69812
    		Buy Now
    Avnet Americas SPW32N50C3FKSA1 Bulk 19 Weeks, 1 Days 1
    • 1 $10.76
    • 10 $9.72
    • 100 $8.61
    • 1000 $8.05
    • 10000 $8.05
    		Buy Now
    Newark SPW32N50C3FKSA1 Bulk 2 1
    • 1 $1.34
    • 10 $1.34
    • 100 $1.34
    • 1000 $1.34
    • 10000 $1.34
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    EBV Elektronik SPW32N50C3FKSA1 16 Weeks 240
    • 1 -
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    Infineon Technologies AG SPW32N50C3

    Trans MOSFET N-CH 560V 32A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW32N50C3FKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPW32N50C3 Tube 15 Weeks 240
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.61854
    • 10000 $3.53238
    		Buy Now
    Mouser Electronics SPW32N50C3 1,080
    • 1 $9.84
    • 10 $9.15
    • 100 $4.9
    • 1000 $4.8
    • 10000 $4.69
    		Buy Now
    Win Source Electronics SPW32N50C3 13,900
    • 1 -
    • 10 $7.1167
    • 100 $4.7445
    • 1000 $4.7445
    • 10000 $4.7445
    		Buy Now

    32N50C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32N50C3

    Abstract: SPW32N50C3 Q67040-S4613
    Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3 Q67040-S4613

    32N50C3

    Abstract: 32N50C 32N50
    Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 PG-TO247 SPW32N50C3 Q67040-S4613 32N50C3 32N50C3 32N50C 32N50

    32N50C3

    Abstract: Q67040-S4613 SPW32N50C3
    Text: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 Q67040-S4613 SPW32N50C3

    32N50C3

    Abstract: SPW32N50C3
    Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247 32N50C3 SPW32N50C3

    32N50C3

    Abstract: SPW32N50C3
    Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3

    32N50C3

    Abstract: 32N50C SPW32N50C3 Q67040-S4613
    Text: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C SPW32N50C3 Q67040-S4613

    32N50C3

    Abstract: 32N50C
    Text: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    Untitled

    Abstract: No abstract text available
    Text: 32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247