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Infineon Technologies AG SPW32N50C3FKSA1 MOSFET N-CH 560V 32A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW32N50C3FKSA1	Tube	167		1	1 $8.64 10 $8.64 100 $5.063 1000 $3.95263 10000 $3.95263	Buy Now
Avnet Americas ()	SPW32N50C3FKSA1	Bulk		19 Weeks, 1 Days	1	1 $10.76 10 $9.72 100 $8.05 1000 $8.05 10000 $8.05	Buy Now
	SPW32N50C3FKSA1	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $2.69686 10000 $2.62883	Buy Now
	SPW32N50C3FKSA1	Bulk		19 Weeks, 1 Days	1	1 $10.76 10 $9.72 100 $8.05 1000 $8.05 10000 $8.05	Buy Now
	SPW32N50C3FKSA1	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $2.69686 10000 $2.62883	Buy Now
Newark	SPW32N50C3FKSA1	Bulk	2		1	1 $1.34 10 $1.34 100 $1.34 1000 $1.34 10000 $1.34	Buy Now
EBV Elektronik	SPW32N50C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPW32N50C3 MOSFETs N-Ch 560V 32A TO247-3 CoolMOS C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPW32N50C3		1,837			1 $9.12 10 $8.47 100 $4.55 1000 $4.53 10000 $4.53	Buy Now

32N50C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
32N50C3 Abstract: SPW32N50C3 Q67040-S4613 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3 Q67040-S4613	PDF
32N50C3 Abstract: 32N50C 32N50 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 SPW32N50C3 Q67040-S4613 32N50C3 32N50C3 32N50C 32N50	PDF
32N50C3 Abstract: Q67040-S4613 SPW32N50C3 Contextual Info: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 Q67040-S4613 SPW32N50C3	PDF
32N50C3 Abstract: SPW32N50C3 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247 32N50C3 SPW32N50C3	PDF
32N50C3 Abstract: SPW32N50C3 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 32N50C3 SPW32N50C3	PDF
32N50C3 Abstract: 32N50C SPW32N50C3 Q67040-S4613 Contextual Info: 32N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C SPW32N50C3 Q67040-S4613	PDF
32N50C3 Abstract: 32N50C Contextual Info: 32N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 P-TO247 Q67040-S4613 32N50C3 32N50C3 32N50C	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
Contextual Info: 32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.11 Ω ID 32 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 009-134-A O-247	PDF