3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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ST10F166
Abstract: ST10R166 ST10 ST10166 pec 820 st10 Bootstrap
Text: ST10F166 FAMILY 16-BIT MCU USER MANUAL 2ND EDITION FEBRUARY 1996 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.
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ST10F166
16-BIT
ST10R166
ST10
ST10166
pec 820
st10 Bootstrap
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16-Bit Microprocessors
Abstract: ELECTRONIC ARRAYS memory
Text: m o EDI9F3420C \ ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory anrays in a single
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EDI9F3420C
128Kx16
32Kx16
EDI9F3420C
EDI9F3420C,
110ns.
130ns,
150ns.
16-Bit Microprocessors
ELECTRONIC ARRAYS memory
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32Kx16 150ns
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Moduie 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory arrays in a single
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128Kx16
32Kx16
120ns
150ns
EDI9F3420C
EDI9F3420C
32Kx16 150ns
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Untitled
Abstract: No abstract text available
Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
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A934
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
A934
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Untitled
Abstract: No abstract text available
Text: moi EDI8F1664C100/120/150 Megabit SRAM Module, JEDEC Pinout 64KX16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4)
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EDI8F1664C100/120/150
64KX16
EDI8F1664C
32Kx8
32Kx8
32Kx16
DQ8-DQ15)
EDI8F1664C100/120/150
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150-110
Abstract: No abstract text available
Text: EDI8F1664C100/120/150 mo\ Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4)
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EDI8F1664C100/120/150
64Kx16
EDI8F1664C
32Kx8
32Kx16
DQ8-DQ15)
EDI8F1664C100/120/1SO
EDI8F1664C100/120/150
150-110
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Untitled
Abstract: No abstract text available
Text: W DI DI8F1664C Commercial Megabit SRAM Module Electronic D«algn* In c . " 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMs are organized as two banks of
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64KX16
150ns
DI8F1664C
EDI8F1664C
32Kx8
32Kx16
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uua 170
Abstract: SRAM 64Kx16 t1is 32Kx16 150ns 327a3
Text: ELECTRONIC DESIGNS INC 3DE D m a • 3530114 GOGGbMS 7 ■ EDI8F1664C m c lr o o lo D*«lgn< In c.* Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS 64Kx16 bit CMOS Static Static RAM Module consisting offour 4 32Kx8CMOS Random Access Memory Module
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EDI8F1664C
64Kx16
EDI8F1664C
32Kx8CMOS
32Kx8
32Kx16
DQ8-DQ15)
3S3Q114
uua 170
SRAM 64Kx16
t1is
32Kx16 150ns
327a3
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Untitled
Abstract: No abstract text available
Text: □PM D P E 3 2 X 1 6 A Dense-Pac Microsystems, Inc. 32K X 16 CMOS EEPROM HALF-PAC O DESCRIPTION: The DPE32X16AV is a high-performance Electrically Erasable and Programmable Read O nly Memory EEPRO M module and may be organized as 32K X 16, or 64K X 8.
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DPE32X16AV
DPE32X16A
16-bit
64-BW
500mV
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Untitled
Abstract: No abstract text available
Text: Cdpm DPS8M612 Dense-Pac Microsystems, Inc. 3 2 K X 1 6 C M O S SRA M M O D U LE O DESCRIPTIO N: The D P S 8 M 6 1 2 is a one megabit Static Random Access M em ory SRAM , complete with memory interface logic and on-board capacitors, organized as 32K X 16 bits.
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DPS8M612
150ns
S8M612
100ns
120ns
32KX16
30A004-04
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 0.5 Megabit UVEPROM MICROSYSTEMS DPV32X16A DESCRIPTION: The DPV32X16A is a 40-pin Pin Grid Array PGA consisting of tw o 32K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate w ith matched thermal coefficients.
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DPV32X16A
DPV32X16A
40-pin
250ns
120ns
150ns
200ns
64KX8
32KX16
00G138S
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Untitled
Abstract: No abstract text available
Text: _ ' / f ' _ DENSE-PAC 0.5 Megabit UVEPROM D P V3 2 X 16A MICROSYSTEMS DESCRIPTION: The DPV32X16A is a 40-pin Pin Grid Array PGA consisting of two 32K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired
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DPV32X16A
40-pin
250ns
120ns
150ns
170ns
200ns
250ns
64KXB
32KX16
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Untitled
Abstract: No abstract text available
Text: DPS8M612 Dense-Pac Microsystems, Inc. 32KX 16 C M O S SRA M M O D U LE O DESCRIPTIO N: The D P S 8 M 6 1 2 is a one megabit Static Random Access M em ory SRAM , complete with memory interface logic and on-board capacitors, organized as 32K X 16 bits. The D P S 8 M 6 1 2 is ideally suited for high performance
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DPS8M612
150ns
I/013
32KX16
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Untitled
Abstract: No abstract text available
Text: □PM D P V 3 2 X 1 6 A Dense-Pac Microsystems. Inc. 32K X 16 UVEPROM PGA MODULE O PRELIMINARY DESCRIPTION: The D PV32X16A is a 40-pin Pin Grid Array PGA consisting of two 32K X 8 U VEPRO M devices in ceramic LC C packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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PV32X16A
40-pin
32KX16
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Untitled
Abstract: No abstract text available
Text: □P M 7 Dense-Pac Microsystems, Inc. ' DPS8M 612 32KX 16 C M O S SRAM MODULE O DESCRIPTIO N: The D P S 8 M 6 1 2 is a one megabit Static Random Access M em ory SRAM , complete with memory interface logic and on-board capacitors, organized as 32K X 16 bits.
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150ns
40-Pin
DPS8M612
120ns
32KX16
30A00-WM
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Untitled
Abstract: No abstract text available
Text: DPS8X16A □PM Dense-Pac Microsystems, Inc. H IG H SPEED 8 K X 16 C M O S S R A M P G A M O D U L E O PRELIMINARY DESCRIPTIO N: The DPS8X16A is a 40-pin Pin Grid Array PGA consisting of two 8 K X 8 SR A M devices in ceramic LCC packages surface mounted on a co-fired ceramic
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DPS8X16A
DPS8X16A
40-pin
150ns
100ns
120ns
32KX16
30A05000
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Untitled
Abstract: No abstract text available
Text: □PM D P S 3 2 X 16A Dense-Pac Microsystems, Inc. ^ H IG H S PEED 32K X 16 C M O S S R A M P G A M O D U L E PRELIMINARY D ESC R IPT IO N : The DPS32X16A is a 40-pin Pin Grid Array PGA consisting of two 32K X 8 SR A M devices in ceramic LCC packages surface mounted on a co-fired ceramic
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DPS32X16A
40-pin
150ns
100ns
120ns
32KX16
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Untitled
Abstract: No abstract text available
Text: ^ Dense-Pac Microsystems, I n c ^ ^ ^ DPS8X16A H |C H s p EEp ^ x 16 C M O S SR A M P G A M O D U L E PRELIMINARY DESCRIPTION: The DPS8X16A is a 40-pin Pin Grid Array P G A consisting of two 8K X 8 SRAM devices in ceram ic LC C packages surface mounted on a co-fired ceram ic
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DPS8X16A
DPS8X16A
40-pin
150ns
S8X16
100ns
120ns
32KX16
30A050-00
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Untitled
Abstract: No abstract text available
Text: DPS32X16A □PM Dense-Pac Microsystems, Inc. O H IG H SPEED 3 2 K X 16 C M O S S R A M P G A M O D U L E PRELIM INARY DESCRIPTIO N: The DPS32X16A is a 40-pin Pin Grid Array PGA consisting of two 32K X 8 S R A M devices in ceramic LCC packages surface mounted on a co-fired ceramic
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DPS32X16A
DPS32X16A
40-pin
150ns
Ope55
100ns
120ns
32KX16
30A050-01
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Untitled
Abstract: No abstract text available
Text: □P M V Dense-Pac Microsystems, Inc. ^ DPE32X16A 32K X 16 CMOS EEPROM HALF-PAC O D ESCR IPTIO N : The D PE32X16A V is a high-performance Electrically Erasable and Programmable Read O n ly M em ory E E P R O M module and may be organized as 32K X 16, or 64K X 8.
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DPE32X16A
PE32X16A
DPE32X16A
16-bit
64-BW
30A053-00
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MAS281 Marconi Electronic Devices
Abstract: mil std 1553b 1750A processor architecture Z800X microprocessor radiation hard Marconi radiation hard 8086 microprocessor block diagrammed with direction C501A 1553B MA3692
Text: Marconi Electronic Devices M A 3692_ Radiation Hard M il Std 1553BTO 16-Bit Processor In terface ADVANCED IN FO R M A TIO N FEATURES GENERAL DESCRIPTION • R ad iatio n Hard to 1M Rad(Si) The M A3692 is a m ulti-function device fo r interfacing
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MA3692
1553B
16-Bit
MA3690/1
MA3692
MIL-M-38510
MAS281 Marconi Electronic Devices
mil std 1553b
1750A processor architecture
Z800X
microprocessor radiation hard
Marconi radiation hard
8086 microprocessor block diagrammed with direction
C501A
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diac kr 206
Abstract: LT 8521 ND4700 ND4700-BRG LT 5219
Text: Big Dipper R4400/R4600/R4700 PCI Bus Bridge ND4700-BRG Chapter 1. Overview Cache tag SRAM Interface ND4700-BRG Big Dipper is a CPU local bus and PCI bus controller chip designed for use with MIPS Cache & tag SRAM test Interface R4400/R4600/R4700. Its main function is as follows.
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R4400/R4600/R4700
ND4700-BRG
R4400/R4600/R4700.
R4400/R4600/
R4700
ND4700-MEC.
32-bit
arbite5-77
ND4700LQF-BRG
diac kr 206
LT 8521
ND4700
ND4700-BRG
LT 5219
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