Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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PDF
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EM033C08
Abstract: EM033C08N EM02R2
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random
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EM033C08
32Kx8
EM033C08
EM02R2XX
EM033C08N
EM033C08N
EM02R2
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PDF
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K6X0808T1D
Abstract: K6X0808T1D-B K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-NF70
Text: K6X0808T1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft October 09, 2002 Preliminary 0.1 revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type November 08, 2002
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Original
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K6X0808T1D
32Kx8
28-SOP-525
28-SOP-450
K6X0808T1D-F
K6X0808T1D-Q
K6X0808T1D-B
K6X0808T1D-NF70
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PDF
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GDX-1C/A CRYSTAL 6PF
Abstract: FM3808 FM3808DK FM1808 footprint dip 16 gold cap
Text: Product Preview FM3808DK FM3808 Development Kit Features • • • • • • 32Kx8 FRAM with self-contained on-board real-time clock Convenient 32-pin DIP platform for developing with FM3808 Provides 28-pin “memory-only” footprint for easy software development
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FM3808DK
FM3808
32Kx8
32-pin
FM3808
28-pin
FM3808DK
GDX-1C/A CRYSTAL 6PF
FM1808
footprint dip 16
gold cap
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PDF
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ES62UL256
Abstract: ES62UL256-25SC ES62UL256-25TC ES62UL256-45SC ES62UL256-45TC
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com ES62UXX256 Family ES62UL256 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random
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Original
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ES62UXX256
ES62UL256
32Kx8
ES62UL256-45TC
ES62UL256-45SC
ES62UL256-25TC
ES62UL256-25SC
ES62UL256-25SC
ES62UL256-25TC
ES62UL256-45SC
ES62UL256-45TC
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PDF
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bq4011
Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4011/bq4011Y
32Kx8
bq4011
144-bit
28-pin
BQ4011MA-100
bq4011Y
bq4011YMA-150N
bq4011YMA-70N
benchmarq BQ4011YMA-70
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PDF
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EM032L08
Abstract: EM032L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM032L08 EM032L08 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM032L08 is an integrated memory device containing a low power 256 Kbit Static Random
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Original
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EM032L08
EM032L08
32Kx8
EM032L08T
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PDF
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HY62WT08081E-DGC
Abstract: HY62WT08081E HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI
Text: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA
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Original
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HY62WT08081E
32Kx8bit
HY62WT08081E
HY62WT08081E-DGC
HY62WT08081E-DGE
HY62WT08081E-DGI
HY62WT08081E-DPC
HY62WT08081E-DPE
HY62WT08081E-DPI
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PDF
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KM68V257CP15
Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)
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OCR Scan
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KM68V257C
32Kx8
KM68V257C-15
KM68V257C-17
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
28-SOJ-300
KM68V257C
KM68V257CP15
KM68V257CP-15
KM68V257CJ-15
KM68V257CP-17
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CJ-17
KM68V257CP20
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PDF
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KM68B261A-6
Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply
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OCR Scan
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KM68B261A
32Kx8
100MHz)
KM68B261AJ
SOJ-300
KM68B261A
144-bit
0D237Sb
KM68B261A-6
KM68B261A-7
KM68B261A-8
Static Random Access Memory
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PDF
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KM62256C
Abstract: KM62256CL km62256cls KM62256CL-7
Text: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n
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OCR Scan
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KM62256CL
32Kx8
385mW
KM62256CLP/CLP-L
28-pin
KM62256CLG/CLG-L
KM62256CLTG/CLTG-L
KM62256CLRG/CLRG-L
KM62256C
km62256cls
KM62256CL-7
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PDF
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Untitled
Abstract: No abstract text available
Text: 32Kx8 3.3V SRAM AS7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down
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OCR Scan
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32Kx8
AS7C3256
AS7C3256
7C3256-10
7C3256-12
7C3256-15
7C3256-20
7C3256-25
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62C256 HYUNDAI S EM IC O N D U C TO R 32KX8-KC CMOS SRAM M 231202B-APR91 FEATURES DESCRIPTION • High speed— 85/100/120/150 ns m ax. The HY62C256 is a high speed low power, 32,768 words by 8-bit CM OS static RAM fabri cated using HYUNDAI’S high performance
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OCR Scan
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HY62C256
32KX8-KC
231202B-APR91
HY62C256
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PDF
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static ram 64kx8
Abstract: No abstract text available
Text: m o EDI8M864C90/100/120/150 i High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that
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OCR Scan
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EDI8M864C90/100/120/150
64Kx8
EDI8M864C
32Kx8
MIL-STD-883C,
EDI8M864C90/100/120/150
static ram 64kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only
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OCR Scan
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EDI8832C
32Kx8
150ns
EDI8832LP
EDI8832C
144bit
32Kx8.
EDI8832C)
EDI8832LP70LB
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PDF
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Untitled
Abstract: No abstract text available
Text: M Dl EDI8833C/LP/P High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS;Monolithic Features The EDI8833C/LP/P is a high speed, high perform ance, low power CMOS Static RAM organized as 32,768 words by 8 bits each. Inputs and three-state outputs are TTL compatible and
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OCR Scan
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EDI8833C/LP/P
32Kx8
EDI8833C/LP/P
768x8
EDI8833LP55CB
EDI8833LP35LB
ED18833LP45LB
EDI8833LP55LB
EDI8833LP35FB
EDI8833LP45FB
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PDF
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Untitled
Abstract: No abstract text available
Text: •B i y m 32KX8 moiaic SRAM MSM832-25/35/45/55/70 Issue 1.0 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r Inc. ^Pin Definition 32,768 x 8 CMOS High Speed Static RAM A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 D2 GND Features Access Times of 35/45/55/70 ns 25 ns in development
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OCR Scan
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32KX8
MSM832-25/35/45/55/70
MIL-STD-883D,
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PDF
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Untitled
Abstract: No abstract text available
Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a
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OCR Scan
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EDI8M1664C50/60/70/85/100
64Kx16
EDI8M1664C
32Kx8
32Kx16bitseach.
DQ8-DQ15)
EDI8M81664C
EDI8U1664C50/60/70/85/100
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4011/bq4011Y
32Kx8
bq4011
144-bit
28-pin
10-year
bq4011YMA-150N
bq4011
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.
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OCR Scan
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bq4011H/bq4011HY
32Kx8
bq4011H
28-pin
BO-41
bq4011H-20
bq4011H-25
bq4011HY
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PDF
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KM62256D
Abstract: KM62256DLI-L KM62256DL-L km62256
Text: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision HSstorv Revision No History Draft Data Remark 0.0 Initial draft M ay 18th 1997 Design target 0.1 First revision - KM62256DLVDLI Isbi = 100 -> 50|xA K M 6 2256D L-L Is b i = 20 - > 1 0 |iA
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OCR Scan
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KM62256D
32Kx8
KM62256DLVDLI
KM62256DL-L
KM62256DLI-L
KM62256D-4/5/7
KM62256DI7DLI
KM62256DL-L/DLI-L
KM62256DL/DLI
km62256
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PDF
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Untitled
Abstract: No abstract text available
Text: M D I EDI8832C/P55/70/85/100/120/150 High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features The EDI8832C/P is a high performance, low power CMOS Static RAM organized as 32,768 words by 8 bits each, tt is available in both standard power C and low
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OCR Scan
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EDI8832C/P55/70/85/100/120/150
32Kx8
EDI8832C/P
MILSTD-883C,
150ns
Compatib1/89
EDI8832C/P55/70/85/100/120/150
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PDF
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Untitled
Abstract: No abstract text available
Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic
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OCR Scan
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EDI8M8256C70/100/120PC
256Kx8
EDI8M8256C
2048K
32Kx8
120ns
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PDF
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