Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6
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100KHz
TMT4003CT
1500Vrms
TMT40003CT
TMD00141
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 45uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6
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100KHz
TMT40002CS
1500Vrms
TMD00140
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xfatm8q14
Abstract: XFATM8Q4 xfmrs
Text: XFMRS 25 1 10/100BASE-T QUAD PORT MODULE • • • MEETS OPEN CIRCUIT INDUCTANCE OCL SPECIFICATIONS OF 350uH MIN WITH 8mA DC BIAS FROM 0-70oC CMR CHOKE COIL OCL IS 30uH MIN CUSTOM DESIGNS AVAILABLE FOR MOST APPLICATIONS Electrical Specifications: Part
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10/100BASE-T
350uH
0-70oC
100KHz-100MHz
XF6694Q1
-20dB
-15dB
xfatm8q14
XFATM8Q4
xfmrs
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DV 3287 C
Abstract: 53B26 DV 3287 b
Text: Y@ ! 8HPT 9hhÃTurr Cvdd 100nF Vdd TEST wupen SUPTEST VDDA Level Peak Detector Sine Filter @2 fc 270pF LowPass Filter @ fc I Limiter 150k 68mH INB 47nF Vdd VREF Demodulator Preampl +i clk Anti-Alias Filter Current Ref. 30uH DATA LowPass Filter @ fc Q
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100nF
270pF
en32Kout
Oscill32
D010-051
DV 3287 C
53B26
DV 3287 b
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SMARTDAA
Abstract: No abstract text available
Text: LAN0069-50 SMART-DAA Transformer z z z z Approved by Conexant for their SMART-DAA solution RoHS Compliant Surface Mountable package Operating Temperature 0°C~70°C Electrical Specifications @25℃ OCL: 30uH Min. Turn Ratio: @10KHz/10mVrms Pri:Sec=1:2±1%
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LAN0069-50
10KHz/10mVrms
LAN0069
SMARTDAA
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S5012
Abstract: No abstract text available
Text: ISDN S-INTERFACE TRANSFORMER P/N: S5012 DATA SHEET A. CHARACTERISTIC DATA: 1. F= 96KHz, CWI+II 200pF 2. RI= RII 0.55Ω, RIII=RIV 1.6Ω 3. RV~VIII= 1.1Ω 4. ∆Idc= 5mA, TU AMB 60°C B. ELECTRICAL SPECIFICATIONS @ 25°C 1. LI+II 30uH (NI+II SERIES) AT 10KHz 100mVrms(core 1, 2)
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S5012
96KHz,
200pF
10KHz
100mVrms
150pF
100mV
100KHz
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LAN0066-50
Abstract: LAN0066 SMARTDAA
Text: LAN0066-50 SMART-DAA Transformer Approved by Conexant for their SMART-DAA solution Surface Mountable package Operating Temperature 0°C to 70°C Electrical Specification @25℃ OCL: Pri:30uH Min. Turn Ratio: Pri:Sec=1:1.666±1% Hi-POT : 2000 Vrms D.C.R: Pri: 0.225 ohm Max.
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LAN0066-50
LAN0066
10KHz/10mVrms
LAN0066-50
LAN0066
SMARTDAA
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80306
Abstract: KMP8 TO 220H
Text: 803 Series www.murata-ps.com Horizontal Mount Toroidal Inductors SELECTION GUIDE Inductance DC Current DC Resistance ±10% H Max. A Max. Ω 75 150 75 150 30 220 1.0 1.0 1.0 3.5 2.0 3.0 0.10 0.14 0.064 0.09 0.60 0.10 Order Code 80301C 80302C 80303C 80304C
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80301C
80302C
80303C
80304C
80305C
80306C
80306
KMP8
TO 220H
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APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
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APT10035LLL
Abstract: APT100GT120JRDL
Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
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APT100GT120JRDL
E145592
APT10035LLL
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APT28GA60BD15
Abstract: APT6017LLL MIC4452
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
APT6017LLL
MIC4452
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Untitled
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 2 . S c h e m a tic : o- B 0 .7 0 8 Max o- 3. E le c tric a l S p e c ific a tio n s: @25°C OCL: 5 0 u H ± 1 5% @ 10KHz, 0.1V OAdc OCL: 30uH Typical @ 10KHz, 0.1V 12Adc DC Res.: 0 .0 2 0 O hm s Max Lead D ia m e te r: Notes:
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10KHz,
12Adc
MIL-STD-202,
UL94V-0
E151556
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Untitled
Abstract: No abstract text available
Text: 1. D im e n s io n s : 2 . S c h e m a tic : 1 CT:2CT ^ n. 1 o o 6 PRIMARY -o 5 SECONDARY -o 4 3. Electrical S p e c if ic a t i o n s : ISOLATION: @25°C 300VAC PRI TO SEC TURNS RATIO: ( 1 - 3 ) : ( 6 - 5 - 4 ) = 1:2CT OCL: P 1 - 3 0.100 30uH Typ @10DKHz 5 0 m V
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300VAC
100KHz
50MHz
33MHz
XFWB1040
May-18-00
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Inductance: 10-7with 6-9 short3.00mH±10% @100kHz,50mV Leakage Inductance: 10-7 with 6-9 -42-5 short 30uH Max @100kHz,50mV DC Resistance: line side 10-6=9-7 1.5 Ohms Max chipe side 1-5 with 2-4 short 2.3 Ohms Max @25°C Turn Ratio: Chip:Line: 1CTS:1.8CTS @100KHz,50mV
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10-7with
100kHz
196kHz
-75dB
40-200kHz
2000Vrms
10SURFACES
TML60014CS
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Untitled
Abstract: No abstract text available
Text: 2 1. D im e n s io n s : Q <JD io - C M S ch em a tic: X D 6XF0256 < . DQ m C LO YYWW rO o 6 3. E lectrical OCL: 25uH x o OCL: 30uH Typ @ 100KHz, 0 .1 V e a c h Irm s: 5 .35A U o IP & f e . S pecifications: @25“C Min @ 100KHz, 0 .1 V (e a c h ) LL: Pins
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6XF0256
100KHz,
100KHz
300Vdc
UL94V-0
E151556
102mm)
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52uH
Abstract: 52uH inductor
Text: 2. S c h e m a tic : 1. M e c h a n ic a l D im e n s i o n s : 1 o- 1 .3 3 2 9 .0 0 Nom B 1 5 . DO Max Max 2 1 A o O- 3. E l e c t r i c a l S p e c ific atio n s: In d u c ta n c e ; 52uH ±15% in In d u c ta n c e : 30uH Min 1 .0 K H z ,0 .1 V with <\i
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MIL-STD-202,
UL94V-0,
XF0526â
52uH
52uH inductor
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Untitled
Abstract: No abstract text available
Text: SIGN PART NUMBER: X USB-M2XFXX DATE TR - tape/reel w/pich up pad TU - tube TO - tape/reel w/out pad _ DESCRIPTION APPROVER THIS IS CAD DRA WING, DO NOT REVISE MANUALL Ylll M aterial • • • • • Plating: 6 - selective flash gold 8 - selective 30uH gold
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Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s i o n s : 2 . S c h e m a t ic : o- 1.33 Max . oCiJ X X ~n ~n < T\ -f»Ln cr> I -S < s § 3. E l e c t r i c a l S p e c ific atio n s: Inductance: 45uH ± 10% ZOKHz, 1.0V Inductance: 30uH Typ @ Z0KHz, 1.0V, 10Adc Current Rating: 10ADC
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10Adc
UL94V-0,
E151556,
3XF0456â
Jun-07-01
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1CT:.2.5CS±2% @100KHz,0.5V Inductance: Pri 22mH Min @100KHz,0.5V Leakage Inductance: Sec 30uH Max Interwinding Capacitance:100pF Max @100KHz,0.5V CD: Pri 150pF Max DC Resistance: Pri 2.5 Ohms±25% Sec 5.8 Ohms±25% @25°C
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100KHz
100pF
150pF
2000Vrms
TMTS0022Cl6
520rant
TMT30022CT
TMD00126
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XF0709A-AD39S
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 2 . S ch em atic: Line Chip 1 O -0 8 30- -o 5 2 0 4o- 3. E lectrica l S p ecifica tio n s: @25°C SHED □ □ □ □ □ □ □ □ I— 5 .7 7 — I _L OCL: Pins 1 - 4 3mH±6% @10KHz 0.1V, Tie Pins 2 - 3 1 Cww: H r Pins 1 - 4 30uH Max @100KHz 0.1V, Tie Pins 2 -3 , Short Chip
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MIL-STD-202C,
UL94-V-0
E151556
-H25T
UL60950
10KHz
100KHz
180pF
03KHz.
XF0709A-AD39S
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10mH choke
Abstract: No abstract text available
Text: 1. M echanical Dim ensiona: 2 . S ch em a tic LO NI i q ò L ( r 0 .3 4 0 ) o CD q Ò XFM RSYYWW 01 0 3 -C M C 1 1 o in 3. E lectrical Specification: OCL: Pins 1 -2 DCR: 0 .4 5 0 LL: Pins 10m H ±30% O hm s 1 -2 @ 10KHz D.D1V Max, Each Wdg 30uH Min @ 100KH z 0.02V ,
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03-CMC1
MIL-STD-202G,
UL94-V-Q
E151556
-t-125
10KHz
100KHz
250Vac
3000Vac,
XF01D3-CMC1
10mH choke
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Untitled
Abstract: No abstract text available
Text: mil ELECTRICAL CHARACTERISTICS: Turns Ratio: Pri:Sec=1:2±2% @100KHz,50mV Inductance: pri: 30mH min @100KHz,50mV SEC Leakage lnductance:30uH Max @100KHz,50mV DC Resistance: Pri: 3.0 ohm max @25°C Sec: 5.0 ohm max @25°C Interwinding Capacitance: 120pF Max @100KHz,50mV
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100KHz
120pF
100pF
3000Vrms
TMT30074CS
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1S5T
Abstract: T151D
Text: 2. Schem atic: 1. M e c h a n ic a l D im e n s i o n s : 1 o- 7R HO Z O- Mhy 3. E l e c t r i c a l Sp ecifications: Inductance: 5 1 .3 5 u H ± 1 0 % @1 OOKHz,0.25V Inductance: 30uH Min @1.0KHz,0.1V with 5.0Adc DC Resistance: 0.022 Ohm s Max D 10.0 ± 3 .0
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L-STD-202G,
20flH
UL94V-0
E1S1S56
XF051
Sep-25â
1S5T
T151D
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208H
Abstract: No abstract text available
Text: 1. M e c h a n ic a l "1 9 .4 0 D im e n s io n s : 2. S c h e m a tic : 1 o- -o 2 o- -o 3 4 Max X x D 3 ~ -~ ! r XFMRS x f 0306 CO -C M C 1 B, D IN □ dE o □ to CN Top view 3. E le c tric a l S p e c ific a tio n s : OCL: 30uH N om @ 100KHz 0.1V Each Wdq
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XF0306
100KHz
300Vdc
MIL-STD-202G,
UL94V-D
E151558
102mm)
Jul-30â
208H
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