Untitled
Abstract: No abstract text available
Text: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator type BH1 5 F B 1 W H F V PACKAGE Fig-1 Plastic Mold BLOCK DIAGRAM Fig.2 TEST CIRCUIT Fig.3 - 8 APPLICATION CIRCUIT Fig.21 FUTURES # # # # # # # # # Output Voltage Accuracy 1.5V±25mV
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150mA
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AN8060
Abstract: 405-v1
Text: - 148- AN8060 ai -4 U-fe y u m e t t i I E 1* 1 3 ! B i g S i ^ 3 f £ H 'n -y -y b « f é t e ± T„ = 2 5 ’C >12V~- 0.3V 500m W -2 0 ~ +75 C - 5 5 - +150 C • 9 < ~/<r> ~> >J — X ■ U = ^ . i t i [SB& * 1*1 M . L X ^ S . — V cc Po o iii J j W i f c - - -30m A m ax
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AN8060
SS-30mAmax
-12V-0
500mW
AN8060
10raA
405-v1
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LCf1
Abstract: sot-25 PDE TK111XX TK111XXS CN001
Text: TENTATIVE IC DATA SH EET TK111XXS VHk • t • t h t i M Ï Ï Î 50mAB$ 0. 11V • (150mA 5ms D u ty 1 2 .5 % m ^ m ^ lO O r n A ^ ^ S E • m ^ J o n /o ff = y h n - y u - f t # (HIGH ON) , 0 F F 9 (0. 1 M A M ax) • f i y ^ X T T ’ ii > r - - > 3 t^ p r
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TK111XXS
50mAB$
150mA
S0T-25)
TK111X
300mra/min
-C025
LCf1
sot-25 PDE
TK111XX
TK111XXS
CN001
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transistor marking LG
Abstract: g2 SOT-23 NPN MARKING CODE c2r sot 23 c2R sot-23 LG SOT23 marking code LG MARKING CODE 028 sot 23 c2r marking MARKING Lg SOT23 LG marking code
Text: Central semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high
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CMPT3646
OT-23
100MHz
300mA,
30niA
OT-23
26-September
transistor marking LG
g2 SOT-23 NPN
MARKING CODE c2r sot 23
c2R sot-23
LG SOT23
marking code LG
MARKING CODE 028 sot 23
c2r marking
MARKING Lg SOT23
LG marking code
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2SC3004
Abstract: No abstract text available
Text: HITACHI 2SC3004— SILICON NPN EPITAXIAL HIGH GAIN AMPLIFIER MEDIUM SPEED SWITCHING JEDEC TO-126 MOD. • ABSOLUTE MAXIMUM RATINGS <Ta=25*C) hem Symbol MAXIMUM COLLECTOR DISSIPATION 2SC3004 Unit Collector to base voltage VctWj 30 V Collector 10 emitter voltage
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2SC3004
O-126
2SC3004
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T0-220B
Abstract: pj30 241B BD241 BD241A BD241B 241a
Text: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO
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U241B
-241B
T0-220B
BD241
BD241A
BD241B
Tc425Â
Junctio41
BD241B
T0-220B
pj30
241B
BD241
241a
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wireless intercom
Abstract: NE567N FLS2- transistor SE567N SE567D
Text: Philips Semiconductors Linear Products Product specification Tone decoder/phase-locked loop NE/SE567 PIN CONFIGURATIONS DESCRIPTION The NE/SE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load whenever a
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NE/SE567
NE/SE567
500kHz)
7110fl2fa
wireless intercom
NE567N
FLS2- transistor
SE567N
SE567D
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TRANSISTOR BI 187
Abstract: BSX39
Text: BSX39 SILICON PLANAR NPN H IGH -SPEED SA T U R A T E D SWITCH The B SX 39 is a silicon planar epitaxial NPN transistor in Jedec T O -18 metal case. It is designed for very fast switching applications up to 500 mA. ABSOLU TE M A X IM U M R A T IN G S VcBO VcEO
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BSX39
BSX39
h300m
TRANSISTOR BI 187
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2171.75
Abstract: VM61312 MRP06 wcp01
Text: VM 61312 V T C In c. Value the Customer 12-CHANNEL, HIGH-PERFORMANCE, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATU R ES Read Gain = 350 V/V MR Bias Current Range = 8 - 20 mA Low Input Noise = 0.55 nV/VHz Maximum Write Current Range = 2 0 -4 0 mA
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12-CHANNEL,
VM61312
2171.75
MRP06
wcp01
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Untitled
Abstract: No abstract text available
Text: Low Power-Loss Voltage Regulators PQ1R30 Series PQ1R30 Series Low Output Current, Compact Surface Mount Type Low Power-Loss Voltage Regulators • Features Outline Dimensions Unit : mm • Com pact surface m ount package(3.4 x 2.2 x 1.2mm) • Low power-loss
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PQ1R30
170iiA)
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Untitled
Abstract: No abstract text available
Text: Regulator+Reset IC MM1458 MâïSUMÎ Monolithic IC MM1458 This IC, developed for use in CD-ROM drives, combines a 3V regulator adapted to low power consumption with a much-sought reset with internal delay circuit, set to detect 4.2V. 1. Large output current
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MM1458
300mA
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