30n60b
Abstract: 30N60 30N60C ic 931
Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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30N60B
30N60C
O-268
O-247
30n60b
30N60
30N60C
ic 931
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30N60P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C
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30N60P
30N60PS
O-268
PLUS220
30N60P
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20090209d
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30N60P
Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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30N60P
30N60PS
O-268
PLUS220
30N60P
30N60
IXTQ30N60P
PLUS220SMD
equivalent for 30n60p
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30n60
Abstract: 30N60B2
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2
IC110
O-220
30n60
30N60B2
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30N60B2
Abstract: No abstract text available
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2
IC110
O-268
30N60B2
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30n60c
Abstract: No abstract text available
Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW
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30N60B
30N60C
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
IC110
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Untitled
Abstract: No abstract text available
Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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30N60B
30N60C
O-268
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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1XYS
Abstract: No abstract text available
Text: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il
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OCR Scan
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30N60B
30N60BS
13/10Nm/lb
O-247
1XYS
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30n60b
Abstract: 30n60 TO-247AA 15a020
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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30N60BU1
O-268
IC110
O-247
728B1
30n60b
30n60
TO-247AA
15a020
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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30N60BU1
O-268
IC110
30N60BU1
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Untitled
Abstract: No abstract text available
Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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OCR Scan
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30N60BD1
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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30N60BD1
30N60BD1
O-247
O-268
O-268
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30N60B
Abstract: 30N60C
Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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30N60B
30N60C
O-247
O-268
30N60C
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DSA003710
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS
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30N60C5
O-247
20070625a
DSA003710
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30n60p
Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V
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30N60P
30N60P
O-268
O-268
405B2
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4013V
Abstract: Siemens DIODE E 1220 30N60B2D1
Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
30N60B2D1
IC110
O-247
O-268
4013V
Siemens DIODE E 1220
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MOSFET IXYS TO-220
Abstract: No abstract text available
Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)
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30N60C5
O-247
O-220
MOSFET IXYS TO-220
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20080310b
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UPS SIEMENS
Abstract: 30N60C siemens servo motor siemens igbt
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)
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30N60C2
IC110
O-220
UPS SIEMENS
30N60C
siemens servo motor
siemens igbt
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30n60
Abstract: 30N60P PLUS220SMD
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings
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30N60P
30N60PS
O-247
PLUS220
30N60P
30n60
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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30N60C2D1
IC110
O-247
O-268
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