BP 2818
Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the
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EC4711
EC4711
21dBm
23Ghz
18dBm
30GHz
DSEC47117003
BP 2818
transistor K D 2499
UM 7222 G
transistor GaAs FET s parameters
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"vlsi technology" abstract for
Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a
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20GHz
30GHz,
"vlsi technology" abstract for
TRANSISTOR 30GHZ
"vlsi technology" abstract
Bipolar HJ
30GHz transistor
trench TEOS oxide layer
complementary npn-pnp
Schematics 5250
SiGe PNP transistor
high gain PNP RF TRANSISTOR
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TRANSISTOR 30GHZ
Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
Text: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.
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30GHz
20GHz,
TRANSISTOR 30GHZ
"vlsi technology" abstract for
Marconi Optical Components
Bipolar HJ
GEC Marconi Materials Technology
Schematics 5250
30GHz transistor
trench TEOS oxide layer
INTERMETal diode
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Untitled
Abstract: No abstract text available
Text: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to
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HMC1127
HMC112085-028
100pF
3-19-2015-A
D13085-0-5/15
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EC2612
Abstract: ec2612 pHEMT MAR 618 transistor
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 pHEMT
MAR 618 transistor
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Untitled
Abstract: No abstract text available
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
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ec2612 pHEMT
Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26128099
ec2612 pHEMT
pHEMT transistor 30GHz
TRANSISTOR 30GHZ
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ec2612 phemt
Abstract: EC2612
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
ec2612 phemt
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ec2612 phemt
Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 phemt
pHEMT transistor 30GHz
MAR 618 transistor
LS 9814
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pHEMT transistor 30GHz
Abstract: EC2612 ec2612 pHEMT 158467
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
pHEMT transistor 30GHz
ec2612 pHEMT
158467
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Untitled
Abstract: No abstract text available
Text: Cardiff Model Lite Datasheet Mesuro is the world’s leading developer of Open Loop Active Harmonic Load Pull solutions, which deliver ground breaking performance improvements in the design and manufacture of RF & microwave devices and amplifiers. Mesuro's unique measurement solutions integrate patented hardware with our WaveForm Engineering
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50GHz
30GHz
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CGY2108GS
Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services
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500MHz
160GHz
CGY2108GS
D01GH
D01MH
CGY2191UH/C2
D01PH
ED02AH
CGY2190UH/C2
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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THM2003J
Abstract: Tachyonics
Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2003J
THM2003J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Tachyonics
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transistor T04
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
transistor T04
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
TRANSISTOR 30GHZ
TRANSISTOR C 608
Germanium Amplifier Circuit diagram
Tachyonics
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9829 A
Abstract: TARF2202 .7E8
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2202
50-ohm
TAHB09)
30GHz
TARF2202
1900MHz
100MHz
9829 A
.7E8
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9635
Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2201
50-ohm
TAHB09)
30GHz
TARF2201
12dBm
900MHz
OT343
9635
sige hbt
wideband linear amplifier
Tx SiGe MMIC
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Untitled
Abstract: No abstract text available
Text: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The
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CHA2097a
20-40GHz
CHA2097a
20-40GHz
14dBm
DSCHA20978021
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p331 TRANSISTOR
Abstract: transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array
Text: A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Tel: +44 1793 518000, FAX: +44 1793 518351 E-mail: martin_wilson@mitel.com
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45GHz
20GHz
30GHz
pp164-167,
20ps/G
p331 TRANSISTOR
transistor 5ghz pnp
Bipolar HJ
TRANSISTOR PNP 5GHz
high gain PNP RF TRANSISTOR
GEC Marconi Materials Technology
p349
Schematics 5250
NPN transistor which has frequency greater than 2
pnp 8 transistor array
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CHA2097
Abstract: No abstract text available
Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip
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CHA2097a
20-40GHz
CHA2097a
DSCHA20978021
CHA2097
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FMCW Radar
Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.
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3800-Pirituba
E-28760
DK-2750
FMCW Radar
radar 77 ghz sige
radar 77 ghz receiver
mesfet lnb
FETs working 60Ghz
infineon FMCW
77 ghz FMCW
radar gunn diode
Gunn Diode
GaAs Gunn Diode "94 GHz"
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Untitled
Abstract: No abstract text available
Text: united m onolithic semiconductors 'J nuA cn n -i« CHA5091 Q 22-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vg Vd The C H A5091a is a high gain broadband twostage m onolithic high pow er am plifier. It is designed fo r a w ide range of applications, from
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CHA5091
22-30GHz
A5091a
22-30G
27dBm
SCHA50919025_
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super bonder 325
Abstract: ls40f
Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz
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EC1840
EC2827
18GHz
40GHz
40GHz.
25nmn
EC1840-99A/00
super bonder 325
ls40f
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NEC transistors
Abstract: No abstract text available
Text: Silicon and G aA s Monolithic Circuits NEC is a global force in the parasitics, improved passivation, and optoelectronic semiconductor products — computer, communications and home emitter line widths as small as 0.6 microns. many of which are developed at our joint
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