30A12 Search Results

DPS512X8MKN3

Contextual Info: 512Kx8, 20 - 45ns, STACK/DIP 30A129-11 D 4 Megabit High Speed CMOS SRAM DPS512X8MKN3 PRELIMINARY DESCRIPTION: The DPS512X8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable

Contextual Info: 2Mx16, 20 - 45ns, STACK 30A129-08 A 32 Megabit High Speed CMOS SRAM DPS2MX16MKn3 DESCRIPTION: The DPS2MX16MKn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

DPS2MK32MKV3

Contextual Info: 8Mx8/4Mx16/2Mx32, 20 - 45ns, PGA 30A128-18 A 64 Megabit High Speed CMOS SRAM DPS2MK32MKV3 PRELIMINARY DESCRIPTION: The DPS2MK32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

soj 36

Abstract: DPS512M8MKJ DPS512M8KH
Contextual Info: 512Kx8, 20 - 45ns, STACK/DIP 30A129-11 D 4 Megabit High Speed CMOS SRAM DPS512M8MKH/DPS512M8MKJ DESCRIPTION: The DPS512M8MKH/DPS512M8MKJ are 4,194,304 bit High Speed Satic Random Access Memory monolithics organised as 524,288 words by 8 bits. The DPS512M8MKH/DPS512M8MKJ uses 8 common

DPS1MK32MKV3

Contextual Info: 4Mx8/2Mx16/1Mx32, 20 - 45ns, PGA 30A128-14 B 32 Megabit High Speed CMOS SRAM DPS1MK32MKV3 DESCRIPTION: The DPS1MK32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

Contextual Info: 4Mx8/2Mx16/1Mx32, 90 - 120ns, PGA 30A126-22 D 32 Megabit FLASH EEPROM DPZ1MH32NV3 DESCRIPTION: The DPZ1MH32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers

MID-30A12

Contextual Info: T-1 PACKAGE PIN PHOTODIODE MID-30A12 Description Package Dimensions The MID-30A12 is a PIN photodiode mou- Unit : mm inches nted in a lensed , special dark plastic package.The lens- 3.00 (.118) ing effect of the package allows an acceptance half view angle of 10° that is measured from the optical axis to the

DPS512X32MKV3

Contextual Info: 2Mx8/1Mx16/512Kx32, 20 - 45ns, PGA 30A128-02 C 16 Megabit High Speed CMOS SRAM DPS512X32MKV3 DESCRIPTION: The DPS512X32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

Contextual Info: 4Mx8/2Mx16/1Mx8, 90 - 120ns, PGA 30A126-02 F 32 Megabit FLASH EEPROM DPZ1MX32NV3 DESCRIPTION: The DPZ1MX32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers 32

Contextual Info: 4Mx16/2Mx32, 90 - 120ns, PGA 30A126-14 A 64 Megabit FLASH EEPROM DPZ2MW32NV3 DESCRIPTION: The DPZ2MW32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers

Contextual Info: 1Mx8, 20 - 45ns, STACK/DIP 30A129-12 B 8 Megabit High Speed CMOS SRAM DPS1MX8MKN3 DESCRIPTION: The DPS1MX8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired

30A12

Contextual Info: 2Mx16, 20 - 45ns, STACK 30A129-28 B 32 Megabit High Speed CMOS SRAM DPS2ME16MKn3 DESCRIPTION: The DPS2ME16MKn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .

3UA12

Contextual Info: DENSE-PAC 64 Megabit FLASH EEPROM DPZ2MW32NV3 M I C R O S Y S T E M S DESCRIPTION: The D P Z 2 M W 3 2 N V 3 "V E R S A -S T A C K " m o d u le is a re v o lu tio n a ry new m e m ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip Carriers

Contextual Info: PA C 8 Megabit High Speed CM OS SRAM M i € R Ù S Y 'S-1 E M S DPS1MX8MKN3 DESCRIPTION: The DPS1.MX8MKN3 High Speed SRAM "STACK" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCQ mounted on a co-fired

MC68EC030FE40C

Abstract: MC68EC030CFE25C F91C MC68EC030FE25CB1 MC68EC030 section 5 MC68030FE33C MC68EC030FE25C sfc 2812 MC68030CRC 68EC030
Contextual Info: MOTOROLA Order this document by MC68EC030/D SEMICONDUCTOR TECHNICAL DATA MC68EC030 Technical Summary Second-Generation 32-Bit Enhanced Embedded Controller The MC68EC030 is a 32-bit embedded controller that streamlines the functionality of an MC68030 for the requirements of embedded control applications. The MC68EC030 is optimized to maintain

Contextual Info: 16 Megabit High Speed CMOS SRAM DPS1MX16MKn3 SLCC Stack DESCRIPTION: The DPS1MX16MKn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, ‘’J’’ leaded or gullwing leaded

UA145

Contextual Info: 8 Megabit High Speed CMOS SRAM DPS1MX8MKN3-A DESCRIPTION: The DPS1MX8MKN3-A High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate having side-brazed

30A120CT

Abstract: marking code L2 marking L2 B2 marking code case MARKING A1 diode Marking code A2 marking CODE a2 MARKING CODE H1 MARKING CODE L1 marking H1
Contextual Info: 30A120CT 30A120CTFP 30A SBR SUPER BARRIER RECTIFIER NEW PRODUCT Features • • • • • • Mechanical Data • • Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability

Contextual Info: 32 Megabit High Speed CMOS SRAM D E N S E -P A C DPS2MX16MKn3 Mí C RO SYSTEMS DESCRIPTION: The DPS2MX16MKn3 High Speed SRAM "STACK” modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Lead less Chip Carriers SLCC .

sfc 2812

Abstract: M68000 MC68010 MC68020 MC68030 MC68040 MC68EC030 MC88916 mc68ec030rp
Contextual Info: Freescale Semiconductor, Inc. Order this document by MC68EC030/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68EC030 Freescale Semiconductor, Inc. Technical Summary Second-Generation 32-Bit Enhanced Embedded Controller The MC68EC030 is a 32-bit embedded controller that streamlines the functionality of an MC68030 for

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

Contextual Info: DENSE-PAC M I C R O S Y S T E M 128 Megabit FLASH EEPROM S D P Z 8M X 16N V 3 DESCRIPTION: T h e D P Z 8 M X 1 6 N V 3 " V E R S A - S T A C K " m o d u le is a re v o lu tio n a ry n e w m e m o ry su b system u sin g D en se-Pac M ic ro sy ste m s' c e ra m ic S tackab le Le ad le ss C h ip C a rrie rs

Contextual Info: DENSE-PAC 16 Megabit High Speed CMOS SRAM DPS51 2X 3 2 M KV3 MICROSYSTEMS PRELIMINARY DESCRIPTION: The D PS512X32M KV 3 "V ER SA -S TA C K " module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip

Contextual Info: _ DENSE-PAC ñ n J 1' 32 Megabit FLASH EEPROM DPZ2MX16NV3 M I C R O S Y S T E M S PRELIMINARY DESCRIPTION: T h e D P Z 2 M X 1 6 N V 3 " V E R S A - S T A C K " m o d u le is a