306 MARKING CODE TRANSISTOR Search Results

306 MARKING CODE TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

306 MARKING CODE TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR 6CT Abstract: 306 marking code transistor 6ct transistor BC818-40W 6ht6 Text: Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.	OCR Scan	BC817W; BC818W OT323 BC807W BC808W. BC817W BC817-16W BC817-25W BC817-40W BC818W TRANSISTOR 6CT 306 marking code transistor 6ct transistor BC818-40W 6ht6	PDF
Q68000-A8370 Abstract: CGY MW Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215	Original	1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW	PDF
P-SOT-143 Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1	OCR Scan	CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking	PDF
bhr sot-89 Abstract: No abstract text available Text: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers	Original	OT-89 OD-123+ 060TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH bhr sot-89	PDF
TRANSISTOR ss101 Abstract: SS101 TO92 SS101 BR 101 Transistor Q62702-S493 Q62702-S636 Q62702-S484 E6288 transistor bss Text: SIPMOS Small-Signal Transistor BSS 101 ● VDS 240 V ● ID 0.13 A ● RDS on 16 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 101 Q62702-S484 bulk	Original	Q62702-S484 Q62702-S493 E6288: SS101 Q62702-S636 E6325: TRANSISTOR ss101 SS101 TO92 SS101 BR 101 Transistor E6288 transistor bss	PDF
2SA1885 Abstract: transistor 2sa1776 Text: 2SA1885 2SA1812/ 2SA1727 / 2SA1776 Transistors High-frequency Am plifier Transistor, RF switches — 10V, — 0.1A 2SA1885 0 Features >A bsolute maxim um ratings (T«=25'C ) 1 ) High transition frequency. (Typ. 650M H z) P aram eter Collector-base voltage	OCR Scan	2SA1885 2SA1812/ 2SA1727 2SA1776 2SA1885 transistor 2sa1776	PDF
d436 Abstract: d436 transistor transistor d436 Text: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	AOD436 AOD436 AOD436L O-252 PD-00148 d436 d436 transistor transistor d436	PDF
d 317 transistor Abstract: ti 317 Text: SIEMENS BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type h -0.37 A BSP 317 ^DS -200 V Type BSP 317 Ordering Code Q67000-S94 Package flDS(on) 6 fì Marking SOT-223 Tape and Reel Information	OCR Scan	OT-223 Q67000-S94 E6327 OT-223 GPS05560 d 317 transistor ti 317	PDF
NSBC144WDP6 Abstract: NSBC123TDP6 Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EDP6T5G NSBC114EDP6/D NSBC144WDP6 NSBC123TDP6	PDF
NSBA123TDP6 Abstract: No abstract text available Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBA114EDP6T5G NSBA114EDP6/D NSBA123TDP6	PDF
NSBC124EDP6 Abstract: NSBC144WDP6 NSBC123TDP6 Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC124EDP6 NSBC144WDP6 NSBC123TDP6	PDF
NSBA124EDP6 Abstract: NSBA123TDP6 Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA124EDP6 NSBA123TDP6	PDF
339 marking code transistor manual Abstract: NSBA123TDP6 Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBA114EDP6T5G OT-963 NSBA114EDP6/D 339 marking code transistor manual NSBA123TDP6	PDF
NSBC114EDP6T5G Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963 Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963	PDF

NSBA114EDP6T5G Abstract: NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor	Original	NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD	PDF
NSBC123TPDP6T5G Abstract: NSBC144EPDP6T5G NSBC114EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6 Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	NSBC114EPDP6T5G NSBC114EPDP6T5G OT-963 NSBC114EPDP6/D NSBC123TPDP6T5G NSBC144EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6	PDF
NSBC144WPDP6 Abstract: No abstract text available Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	NSBC114EPDP6T5G NSBC114EPDP6T5G NSBC114EPDP6/D NSBC144WPDP6	PDF
BC413 Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP	OCR Scan	A53Sba5 D041S64 VPTO52I2 Q62702-C375 Q62702-C375-V1 Q62702-C375-V2 Q62702-C376 Q62702-C376-V1 Q62702-C376-V2 35Li05 BC413 AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c	PDF
Untitled Abstract: No abstract text available Text: NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com MARKING DIAGRAM This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor	Original	NSBC115TD 527AD DTC115TD/D	PDF
sot963 Abstract: No abstract text available Text: NSBA115TDP6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor	Original	NSBA115TDP6 DTA115TD/D sot963	PDF
sot963 Abstract: NSBC123TDP6 Text: NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor	Original	NSBC123TDP6 DTC123TD/D sot963	PDF
sot963 Abstract: NSBA123TDP6 Text: NSBA123TDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor	Original	NSBA123TDP6 DTA123TD/D sot963	PDF
sot963 Abstract: No abstract text available Text: NSBC115TDP6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor	Original	NSBC115TDP6 DTC115TD/D sot963	PDF
smd diode 319 Abstract: No abstract text available Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273	OCR Scan	OT-223 Q67000-S273 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd diode 319	PDF

306 MARKING CODE TRANSISTOR Search Results

306 MARKING CODE TRANSISTOR Result Highlights (5)

306 MARKING CODE TRANSISTOR Datasheets Context Search

TRANSISTOR 6CT

Q68000-A8370

P-SOT-143

bhr sot-89

TRANSISTOR ss101

2SA1885

d436

d 317 transistor

NSBC144WDP6

NSBA123TDP6

NSBC124EDP6

NSBA124EDP6

339 marking code transistor manual

NSBC114EDP6T5G

NSBA114EDP6T5G

NSBC123TPDP6T5G

NSBC144WPDP6

BC413

Untitled

sot963

sot963

sot963

sot963

smd diode 319