Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK M7E ì> • 3030bl0 000031Ô ICANA 7 TCN-1000 Series -93; -12; -3 t -Hì -67 Features • • Built-in Low Noise Am plifier S hielded Feedback Loop Large Active Area Shielded Am plifier • • Low Offset W id e Spectral R ange Operating Data and Specifications at 23°C
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3030bl0
TCN-1000
TCN-1000-93
TCN-1000-12
TCN-1000-3
3030L10
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SIECOR Fiber Optic cable
Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Text: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.
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3030bl0
ff-07
C86081E
C30616E
C30617E
C30986E
ED-0051/12/90
SIECOR Fiber Optic cable
siecor
EG*G Optoelectronics
Siecor 62.5
C86081E-13
C86081E-14
1300 nm LEDs
SIECOR Fiber Optics
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MIL-STD-2020
Abstract: No abstract text available
Text: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width
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3030bl0
000032B
YAG-040B
YAG-100A
YAG-200
YAG-444
MILSTD-750B
25-65-C;
MILSTD-2020
MIL-STD-2020
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm
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3030bl0
C30957E
C30957E
t455-6191
ED-0032/10/88
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sg3001
Abstract: 2l688 "rca application note" AN4469 904nm laser rca eg and g laser diode AN-4993 10-dimensional rca 036
Text: E G & G/CANADA/OPTOELEK n IO D • 3030bl0 0000070 SÛO M C A N A "T”- V/- Solid State f l * MW Electro Optics and Devices I f b f l E lectro O p t lC S SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output
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3030bl0
0000Q7fl
SG3001
SG3001
2l688
"rca application note"
AN4469
904nm
laser rca
eg and g laser diode
AN-4993
10-dimensional
rca 036
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sg3001
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK n A IO » • 3030bl0 0000070 SflO ■ CANA'7”- Solid State J V ElectroOptics and Devices Electro Optics SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output at ¡f m * 4 0 A and T c * 27° C —
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3030bl0
SG3001
SG3001
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Untitled
Abstract: No abstract text available
Text: G & IDE D G/CANADA/OPTOELEK I t C / l 3030bl0 QÜGDD37 T ICANA 7e y / - ° INFRARED EMITTER PACKAGE LOW PROFILE OIL DATA SHEET C86065E-13 • 1300 nm LED, Multi Mode Pigtail C86065E-14 • 1300 nm LED, Single Mode Pigtail C86067E • 820 nm LED LOW PROFILE DIL PACKAGE
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3030bl0
GDD37
C86065E-13
C86065E-14
C86067E
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indium gallium arsenide phosphide
Abstract: 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30617 C30986-010 C30986-090QC-01 C30986-350 35XL 30306 3008D2
Text: E 6 & 6 / C A N A D A / O P T OELEK I t C / € l 3030bl0 000ülb3 ID T3D * C A N A InGaAs Photodiodes C30986 Series DATA SHEET Optics For Detection of 1000 to 1700 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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3030bi0
C30986
T-W-61
l-1075
C30986-XXXQC-YY
C30986-XXX
14-pin
C30617
indium gallium arsenide phosphide
090Q
PREAMPLIFIER TRANSIMPEDANCE optic fet
C30986-010
C30986-090QC-01
C30986-350
35XL
30306
3008D2
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Untitled
Abstract: No abstract text available
Text: E S S 6/CANADA/OPTOELEK m 3030bl0 0000334 5 47 E t ICANA F Series FFD-040;FFD-100;FFD-200 rv/ J3 Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTim e Isolated Photodiode Chip • • • Large Active Area W ide Spectral Range
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3030bl0
FFD-040
FFD-100
FFD-200)
FFD-040B
FFD-100
FFD-200
3030blD
FFD-040A)
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HUV-4000B
Abstract: HUV-2000B HUV1100BQ HUV4000B HUV-1100BQ NEP 250 HUV 4000B HUV-1100 GAM 84 1150 4000B
Text: E G & G/CANADA/OPTOELEK 47E J> • 3030bl0 0000314 T MCANA HUV Series 1100BG; 1100BQ; 2000B; 4000B T.v/.<7 Features • • Built-in Low Noise Amplifier Groundable C ase • • Shielded Amplifier Large Active Area • • W ide Spectral Range Oxide Passivated Structure
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3030blD
D000314
1100BG;
1100BQ;
2000B;
4000B)
HUV-1100BQ
HUV-2000B
HUV-4000B
HUV-4000B
HUV1100BQ
HUV4000B
NEP 250
HUV 4000B
HUV-1100
GAM 84 1150
4000B
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8A4 diode
Abstract: J20Si DIODE GE GE power diode Ge dual photodiode photodiode ge J20Si-SA4-R03M photodiode 1550 NEP pin Photodiode 1550 nm two color photodiode j20si
Text: E G & G/ CANADA/ OPTOELEK 47E 3030bl0 D D00Q33fl 2 • J20SÌ and J16SÌ Series T Features Applications • • • • • Dual-W avelength Detection P arallel Outputs Si/Si or S i/G e Sandwich CANA V/-55 - Two-Color Temperature M easurem ents Dual-W avelength Power Meters
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3D30bl0
D00G33fl
-5A4-R03M
-5A4-R02M
-8A4-R02M
-8A4-R05M
J16Si
8A4 diode
J20Si
DIODE GE
GE power diode
Ge dual photodiode
photodiode ge
J20Si-SA4-R03M
photodiode 1550 NEP
pin Photodiode 1550 nm
two color photodiode j20si
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Untitled
Abstract: No abstract text available
Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30956E
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Untitled
Abstract: No abstract text available
Text: F r & g/CANADA /OP TOELEK n o n I ] ,□]>• 3030bl0 □□□□□40 SSE « C A N A Solid State Detectors Electro optics and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm
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3030bl0
C30948E
C30948E
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Untitled
Abstract: No abstract text available
Text: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E
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3030bl0
C86006E.
C86010E
C86006E
C86006E,
C86007E,
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK itc /i 10 ]> tiectrouptics and Devices 3030bl0 0D00GSD MT1 H C A N A Laser Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser • Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030bl0
0D00GSD
OP-12
C86000E
C86000E
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uv photodiode, GaP
Abstract: UV100BG-DUAL UV-140BQ-4 UV-140-2 UV-140BQ-2 uv photodiode UV-100BG 140BQ uv 100bg UV-100BQ
Text: E fi & fi/CANAKA/OPTOELEK UV Series: 47E D • 3030bl0 00 003 10 2 * C A N A -V/-55 Multi-Element_ Features • • • • Cross Talk < 1% Between Elements Linearity Over W ide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure •
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303Gb
UV-100BG
UV-100BQ
UV-140BQ-2
UV-140BQ-4
UV-140-4
UV-140-2
UV-140-4
UV-140-2/UV-140-4
uv photodiode, GaP
UV100BG-DUAL
UV-140BQ-4
UV-140-2
uv photodiode
140BQ
uv 100bg
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EG*G Optoelectronics
Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage
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3030bl0
1550nm
C86091E
C86091E
ED-0053/06/91
EG*G Optoelectronics
C30642
eg and g laser diode
C30641
indium gallium arsenide phosphide
Indium Gallium Arsenide Phosphide lasers
C30618
C30619
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NE72000
Abstract: C30617 C30620 3008D2 QC-04 pin Photodiode 1550 nm C30620QC-04-XXX 00001OSOOS QC02
Text: ID E 6 & 6/C A N A B A /0P T 0E L E K R C il Optics • 3030bl0 □ □ O O G 'ie f- <350 B K A N A InGaAs Photodiodes C30620 Series D ATA S H E ET Long W avelength Photodiode Fo r Detection of 1000 to 1 7 0 0 N M Radiation Pream plifier Fron t End W ith or W ithout Integral Fib e r Optic Pigtails
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3030bl0
C30620
C30620-XXX
C30620QC-YY-XXX
L-1075
14-pin
C30617)
NE72000
C30617
3008D2
QC-04
pin Photodiode 1550 nm
C30620QC-04-XXX
00001OSOOS
QC02
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Untitled
Abstract: No abstract text available
Text: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails
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303GblÃ
C30620
14-pin
C30620QC-YY-XXX
C30620-XXX
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Siecor
Abstract: 1300 nm LED SIECOR Fiber Optics Siecor 62.5 1300 nm LED chips C86065E-13 C86057E-13 C86057E-14 C86065E-14 C86067E
Text: n c /i E G & G/CANA PA / O P TOELEK IDE D 3030b]i0 GQGDD37 T ICANA INFRARED EMITTER PACKAGE LOW PROFILE OIL DATA SHEET C 86065E-13 • 1300 nm LED, Multi Mode Pigtail C 86065E-14 • 1300 run LED, Single Mode Pigtail C 86067E • 820 nm LED LOW PROFILE DIL PACKAGE
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303Gbl0
GQGDD37
C86065E-13
C86065E-14
C86067E
EU-0024'
Siecor
1300 nm LED
SIECOR Fiber Optics
Siecor 62.5
1300 nm LED chips
C86065E-13
C86057E-13
C86057E-14
C86065E-14
C86067E
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C30872
Abstract: RCA 410 RCA H 410 c30872 application notes ir photodiode 0351 S546 photodiode avalanche u 5601 TO8 package
Text: E G & G/CANADA/OPTOELEK I t C i l IO D • 3G30L1G OGDD11S S6ñ « C A N A Electro Optics Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm
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3G30L1G
OGDD11S
C30872
C30872
ED-0033/10/88
RCA 410
RCA H 410
c30872 application notes
ir photodiode 0351
S546
photodiode avalanche
u 5601
TO8 package
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SGD-100A
Abstract: SGD-200 SGD100A SGD 200 SGD-040A Corning 7052 040-L SGD040L SGD-040L SGD-444
Text: E G 8, G / C A N A D A / O P T O E L E K T> 47E • 3030hlG 0000320 S ■ CANA SGD Series T-V/-53 Features • • • Planar Diffused Structure Oxide Passivated Guard Ring Construction • • • Wide Spectral Range Wide Dynamic Range Low Noise • Large Area
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3030hlD
T-V/-53
SGD-040
SGD-100A
SGD-200
SGD-444
SGD-444
MIL-STD-750B
MIL-STD-202D
SGD-100A
SGD-200
SGD100A
SGD 200
SGD-040A
Corning 7052
040-L
SGD040L
SGD-040L
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Untitled
Abstract: No abstract text available
Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava
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C30902E,
C30902S,
0921E,
C30921S
C30902E
L-571
L-933
C30921E
C30902E
C30902S
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module
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C30919E
3030bl0
W/-67
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