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    3015K Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    ZSSC3015KITV1P1 Renesas Electronics Corporation Evaluation Kit for ZSSC3015 Visit Renesas Electronics Corporation
    SF Impression Pixel

    3015K Price and Stock

    Diodes Incorporated AP3015KTR-G1

    IC REG BOOST ADJ 300MA SOT23-5
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    DigiKey AP3015KTR-G1 Digi-Reel 183,134 1
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    AP3015KTR-G1 Cut Tape 183,134 1
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    AP3015KTR-G1 Reel 183,000 3,000
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    Mouser Electronics AP3015KTR-G1 5,559
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    Newark AP3015KTR-G1 Cut Tape 4,395 5
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    Bristol Electronics AP3015KTR-G1 150
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    TME AP3015KTR-G1 2,424 1
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    Avnet Asia AP3015KTR-G1 20 Weeks 3,000
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    Avnet Silica AP3015KTR-G1 10 Weeks 3,000
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    Win Source Electronics AP3015KTR-G1 98,000
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    VPG Transducers Y163015K0000T9R

    RES SMD 15K OHM 0.01% 1/4W 1206
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    DigiKey Y163015K0000T9R Digi-Reel 113 1
    • 1 $14.82
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    Y163015K0000T9R Cut Tape 113 1
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    Y163015K0000T9R Reel 500
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    Avnet Americas Y163015K0000T9R Reel 100
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    Newark Y163015K0000T9R Cut Tape 1
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    Avnet Abacus Y163015K0000T9R 11 Weeks 100
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    TE Connectivity VE13015KJS

    VE 130W 15K 5% SOLDER LUG
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    DigiKey VE13015KJS Box 25 1
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    Mouser Electronics VE13015KJS
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    Master Electronics VE13015KJS
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    New Age Enclosures S3A-303015-K

    BOX ABS BLACK 3"L X 3"W
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    DigiKey S3A-303015-K Bag 25 1
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    RS S3A-303015-K Bulk 2 Weeks 50
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    New Age Enclosures S1A-303015-K

    BOX ABS WHITE 3"L X 3"W
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    DigiKey S1A-303015-K Bag 23 1
    • 1 $9.52
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    3015K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc307

    Abstract: BC309 BC308
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter


    Original
    BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc307 BC309 BC308 PDF

    bc307

    Abstract: BC308
    Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original
    BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308 PDF

    SDS3015K-100M-LF

    Abstract: No abstract text available
    Text: Coilmaster Electronics Co., Ltd. E-mail :info@coilmaster.com.tw Web Site : www.coilmaster.com.tw 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 3015K SERIES ~ Low Profile Shielded Power Inductors


    Original
    SDS3015K 3015K 100KHz 500mV SDS3015K-100M-LF SDS3015K-150M-LF SDS3015K-100M-LF PDF

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 PDF

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189 PDF

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 PDF

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    BSY55

    Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    BSY55 2N2102 2N4036 Scans-00107830 2N2222A zetex BCY56 2N1893 2N2405 2N4036 BFX85 ZT86 PDF

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025 PDF

    mt 1k

    Abstract: bc146 k 151*c transistor T4104 to-237 micro
    Text: MICRO ELECTRONICS CORP AS DE | t.DT17flfi []0CmL,73 T Miniature Transistors G E N E R A L PURPOSE H TYPE NO. P O L A R IT Y M A X IM U M R A T IN G S V C E SA T FE C ASE Pd (mVU) 'c (mA) V CEO (V) min max ‘c (mA) V CEO (V) max (V) fT N.F. min max f (MHz)


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    DT17flfi MT-42 mt 1k bc146 k 151*c transistor T4104 to-237 micro PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly


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    752D533 2N2907A ZT181 BCY58 BC109 BCY78 ZT187 30-15K BC179 PDF

    ZTX327

    Abstract: ZTX321
    Text: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10


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    MPSA42 FXTA42 ZTX341 ZTX300 MPSA92 FXTA92 ZTX541 ZTX500 ZTX327 ZTX3866 ZTX321 PDF

    low noise transistors

    Abstract: MPS2369A
    Text: Section S: Bipolar Transistors _General Purpose and S w itc h in g Transistors E-Line S w itc h in g T r a n s i s t o r s lP;> 300m W Pinout Details: 1-Collector, 2-Base,


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    ZTX341 ZTX314 MPS2369A ZTX300 ZTX541 ZTX500 ZTX510 low noise transistors PDF

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent PDF

    BCY56

    Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 BCY59A 2N1131 2N1132 2N4037 BC177 PDF

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


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    N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177 PDF

    BSY52

    Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    2N2405

    Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92 PDF

    2N2102

    Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


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    BCY59 BCY71 BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 PDF

    2N4036 g1

    Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    BC548B BC548C BC549B BC549C BC108A BC108B BC108C BC109B BC109C ZTX300 2N4036 g1 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly suitable for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    BSY55 2N2222A BCY58 ZT180 ZT187 BSY51 30-15K BSY52 BC109 PDF

    ZT189

    Abstract: No abstract text available
    Text: PLESSEY SEdlCOND/DISCRETE ~TS DÉT| 7 2 2 0 5 3 3 7220533 PLESSEY SEMICOND/DISCRETE DDD4^2b 5 95D 0 4 9 2 6 I PN P LOW NOISE TABLE 6 - PNP SILICON PLANAR LOW NOISE TRANSISTORS The transistors shown in this table are characterised for low noise, low level amplification and are particularly


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    BCY65E BCY59 BCY58 BC109 ZT189 BCY77 ZT183 ZT184 BCY79 BCY71 PDF

    MT4104

    Abstract: BCW83 bc517 2n5306 to 92F
    Text: Miniature Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS Pd Ic VcEO mA (mW) (V) H fe min max Ic (mA) VcE (V) BC146 BC146R BC146Y BC146G BC200 N N N N P MT-42 MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 50 50 20 20 20 20 20 80 80 140 280 50 550


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    BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 CL151-4 MT4104 bc517 2n5306 to 92F PDF

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


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    RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A PDF