Untitled
Abstract: No abstract text available
Text: Profile 8248 300x39,7 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 12,69 300 39,7 0,39 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com
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300x39
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parabolic antenna
Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
Text: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account
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12GHz
30MHz
parabolic antenna
antenna for 12GHZ
parabolic microwave antenna
Types of Radar Antenna
long wave RADIO
absorber
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1-645235-6
Abstract: 100CL 4-530396-4 4X11 edge connector 32 package 11x7 453039 1-530843-2 1-645235-7
Text: 107-68619 Packaging Specification GPL 267 SERIES Sep.13,05 1. PURPOSE 目的 Define the packaging specifiction and packaging method of GPL 267 Series. 订定 GPL 267 Series 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE TYPE A
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100CL
100CLf
QR-ME-030B
1-645235-6
4-530396-4
4X11
edge connector 32 package
11x7
453039
1-530843-2
1-645235-7
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KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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SYM53C896
Abstract: 80960JT 273293 intel desktop board SERVICE MANUAL SMU22R
Text: Intel Integrated RAID Controller Design Kit SMU22R Technical Product Specification January 2000 Order Number: 273293-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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SMU22R
SYM53C896
80960JT
273293
intel desktop board SERVICE MANUAL
SMU22R
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LED21-TEC-PR
Abstract: No abstract text available
Text: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.
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LED21-TEC-PR
LED21-TEC-PR
300x300
150-200mA
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LED34-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED34-TEC-PR
LED34-TEC-PR
LED34
LED34
LED34-PR
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LED22
Abstract: No abstract text available
Text: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.
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LED22
LED22
300x300
150-200mA
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LED22-TEC
Abstract: No abstract text available
Text: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.
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LED22-TEC
LED22-TEC
300x300
150-200mA
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LED20-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates
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LED20-TEC-PR
LED20-TEC-PR
LED20
LED20
LED20-PR
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Untitled
Abstract: No abstract text available
Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD3
LED36-SMD3
300x300
150-200mA
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LED36-TEC
Abstract: No abstract text available
Text: LED36-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
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LED36-TEC
LED36-SMD3
300x300
150-200mA
LED36-TEC
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LED31-TEC
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED31-TEC
LED31-TEC
LED31
LED31
LED31-PR
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LED43-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 4.3 µm Model LED43-TEC-PR 10 µW •Light Emitting Diodes LED43-TEC-PR are designed for emitting at a spectral range around 4300 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED43-TEC-PR
LED43-TEC-PR
LED43TEC-PR
LED43
LED43
LED43-PR
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LED34
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm 24 µW Model LED34 •Light Emitting Diodes LED34 are designed for emitting at a spectral range around 3400 nm. Heterostructures HS are grown on InAs substrates. The output emission can be modulated by current flowing in
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LED34
LED34
LED34-PR
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omron E3F
Abstract: Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H
Text: E55E-EN-01+E3FZ-E3FR+Datasheet.FM Seite 1 Dienstag, 15. April 2008 5:17 17 Easy mounting photoelectric sensor in short M18 housing E3FZ/E3FR • Secure-click snap mounting for fast installation • High power LED for enhanced sensing distance • Short housing with less than
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E55E-EN-01
NL-2132
omron E3F
Y92E-M12PUR4A5M-L
E3FZ-T86H-D
e3f omron
Y92E-M12PUR4S5M-L
E3FZ-D87
Y92E-M12PUR4A2M-L
Y92E-M12
E3FZ-T81H
E3FZ-LS89H
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E3X-DA11-N
Abstract: E3X-DA41V E3XDA21N E3X-DA41-N E3X-DA21-N E3X-DA11V torque settings chart 12mm brass E32-L56E e3x-da41
Text: E3X-DA-N Sense the Difference, Make a Difference! Digital Fiber Amplifier Amplifier ● Select from Three Clear Display Methods: Digital incident level Digital percent level LED Bar Display ● Save-wiring Connector ● Auto Power Control Mobile Console ● Remote Tuning and Adjustment
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E3X-DA11-N
E3X-DA41-N
E3X-DA21-N
E3X-DA51-N
E39-K2
E39-K2
E32-T84S
E313-E1-2
0601-2M
E3X-DA11-N
E3X-DA41V
E3XDA21N
E3X-DA41-N
E3X-DA21-N
E3X-DA11V
torque settings chart 12mm brass
E32-L56E
e3x-da41
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12VDC sf 249
Abstract: 230 97o Osram LED SMD 5630 diodo 2B
Text: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection
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VG/71P
VG/73P
VL-5081-65-B
VL-5081-65-BV
VL-5081-85-B
VL-5081-85-BV
12VDC sf 249
230 97o
Osram LED SMD 5630
diodo 2B
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-124/A/WY
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-125/A/WY
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ua 180
Abstract: x -12sl
Text: Center part 180 WxH x l 2-foidSKWP X 30X 215 ^240x30x215 300x30x215 '*« S K iiP J.\ö k*0
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NE644
Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Text: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors
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NE644
NE644
NE64-124
NE64408)
34-6393or
2SC2272
NE64400
NE64408
NE64480
NEC Microwave Semiconductors
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Untitled
Abstract: No abstract text available
Text: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.
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2SC519A
2SC520A
2SC521A
00D7L
2SC519A)
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