LED22 Search Results

1w luxeon led

Abstract: luxeon 1w power supply LED 5w power LED 5W LED22V1A-350MA LED22V1A-700MA LED22V1A LED22V1A-ADJ Luxeon 5w
Contextual Info: Analog Technologies, Inc. LED22V1A HIGH EFFICIENCY LED CONTROLLER Main Features: output current adjustable, supply current monitoring, high efficiency, high power density, high precision, small size, fault protection, low output ripple current and low cost.

LED22V1A2DWM

Abstract: led CONTROLLER LED22V1A2DW
Contextual Info: Analog Technologies, Inc. LED22V1A2DW HIGH EFFICIENCY LED CONTROLLER Main Features: high efficiency, output current adjustable, high stability, small size, output short circuit protection, and low cost. Specifications Part number: Input voltage: Output voltage:

LED22

Contextual Info: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.

LED22-TEC

Contextual Info: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.

LED22FC-PR-WIN

Contextual Info: LED22FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

Contextual Info: LED22-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.20 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.

LED22FC

Contextual Info: LED22FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22FC-SMD5

Contextual Info: LED22FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid

LED22FC-TEC-PR

Contextual Info: LED22FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22-TEC-PR

Contextual Info: LED22-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.

LED22FC-TEC

Contextual Info: LED22FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22FC-PR

Contextual Info: LED22FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.23 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED22-PR-WIN

Contextual Info: LED22-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.

LED22-PR

Contextual Info: LED22-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-PR has a stable ouput power and a lifetime more then 80000 hours.

LED60

Abstract: IHLP-2525BD-01 ISL97635 ISL97635IRZ TB347 TB379 brt7
Contextual Info: ISL97635 Data Sheet December 22, 2008 SMBus 8-Channel LED Driver Features The ISL97635 is a digitally controlled LED driver that controls 8 channels of LED current for LCD backlight applications. The ISL97635 is capable of driving typically 72 8x9 pieces of 3.5V/30mA or 80 (8x10) pieces of

Contextual Info: TPS65011 www.ti.com SLVS501A – FEBRUARY 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR LI-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

Contextual Info: TPS65012 www.ti.com SLVS504A – MARCH 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR Li-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

AIC23

Abstract: LD01 LD02 OMAP1510 TPS65011 TPS65014 TPS65014RGZ TPS65014RGZR TPS65014RGZT 6R0 thermistor
Contextual Info: TPS65014 www.ti.com SLVS551 – DECEMBER 2004 POWER AND BATTERY MANAGEMENT IC FOR LI-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

103AT

Abstract: AIC23 LD01 LD02 OMAP1510 TPS65011 TPS65011RGZ TPS65011RGZR TI AIC23
Contextual Info: TPS65011 www.ti.com SLVS501A – FEBRUARY 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR LI-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

LED25

Abstract: LED10 QFN-24 QFN-24 lcd SCHOTTKY DIODE 20V 2A LED28 DIM100
Contextual Info: FP6741A fitipower integrated technology lnc. Boost White LED Driver with 10-Channel Current Sources Description Features The FP6741A is a step-up current mode PWM DC/DC converter with 10 channel constant current sources to match LEDs with quite uniform current. It is suitable

sq-h48w

Abstract: SQ-H48W Datasheet KS8995XA LF8731 Transpower HB826-2 ycl dc 101 YCL PH406466 YCL PT163020 pin configuration of sq-h48w lan transformer KS8995E
Contextual Info: KS8995XA Integrated 5-Port 10/100 QoS Switch Rev 2.6 General Description The KS8995XA is a highly integrated Layer-2 quality of service QoS switch with optimized bill of materials (BOM) cost for low port count, cost-sensitive 10/100Mbps switch systems. It also provides an

h1664nl

Abstract: KSZ8895MQI KSZ8895 KSZ8895FMQI KSZ8895 driver YCL PH406082 KSZ8895RQ NT79075 KSZ8995 PH406082
Contextual Info: KSZ8895MQ/RQ/FMQ Integrated 5-Port 10/100 Managed Ethernet Switch with MII/RMII interface Rev. 1.2 General Description The KSZ8895MQ/RQ/FMQ is a highly-integrated Layer 2 managed five-port switch with optimized design and plentiful features. It is designed for cost-sensitive

ISL97670

Abstract: LED9r2 jp1e 6P10S JP16 6P12S ISL97673 ISL97671 ISL97672 ISL97674
Contextual Info: Application Note 1581 ISL97671/2/3/4IRZ-EVAL Quick Start Guide This quick start guide pertains to the ISL97671/2/3/4IRZ-EVAL Evaluation Board. This board comes populated with 72 LEDs in a 6P12S configuration to simplify evaluation and testing. Please install the

SQ-H48W

Abstract: 10BT KS8995E KS8995M KS8995MI KSZ8995M 0x810
Contextual Info: KS8995M Micrel, Inc. KS8995M Integrated 5-Port 10/100 Managed Switch Rev 1.13 General Description Features The KS8995M is a highly integrated Layer-2 managed switch with optimized BOM Bill of Materials cost for low port count, cost-sensitive 10/100Mbps switch systems. It also provides