300FJS Search Results

400v 20 amp mosfet

Abstract: OM9001SS OM9002SS OM9003SS OM9004SS
Contextual Info: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier

T045

Abstract: NSP6191
Contextual Info: NSP6191 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW C O L L EC T O R -E M IT TE R SATURATION VOLTAGE DC CURRENT GAIN SPEC IFIED T O S AM PERES EX CELLEN T SAFE O PERA TIN G AREA

Contextual Info: A dvanced R ow er Te c h n o lo g y 8 D2S7T0T Q00174Ô 301 • SBL3030PT thru SBL3060PT VOLTAGE 30 AMP RANGE 3 0 t o 6 0 V o lts SCHOTTKY BARRIER RECTIFIERS CURRENT 30 Am peres FEATURES TO-3P 645 16.4 Plastic package has U/L Flammability Classification 94V-0

3l4 diode

Contextual Info: International llQRlRectifier PD- 9.1311 IRFZ34NS P R E L IM IN A R Y HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating T emperature Fast Switching Fully Avalanche Rated V dss = 5 5 V

Contextual Info: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS* RATINGS

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

5109d

Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFR012

Contextual Info: IRFR010/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK L o w e r R ds ON Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tr u c tu r e

rectifier diode 20 amp 800 volt

Abstract: OM4202NC OM4202SC "Dual Schottky Rectifier" Schottky Doubler 1.5A COMMON CATHODE OM4202S
Contextual Info: OM42Q2SC/RC/DC HERMETIC TO-258AA DUAL POWER SCHOTTKY RECTIFIER FEATURES • • • • • • • • • Very Low Forward Voltage Low Recovery Charge Rugged Package Design, JEDEC TO-258AA High Efficiency For Low Voltage Supplies 45V Blocking @ Rated Tjmax

2N6726

Abstract: 2N6714 2N6727 SE192 TRANSITON
Contextual Info: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N

ZVP0120L

Abstract: ZVP P-channel
Contextual Info: PLESSEY s e n i c o n d / d i s c r e t e TS 7220533 P L E S S EY S E M I C O N D /D ISCRETE D F § ? a E D S 3 3 0 0 0 S 7 4 CJ 3 95D 0 5 7 4 9 D T - J7-zr P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast sw itching speeds

um 741

Abstract: LS 741 a 741 j
Contextual Info: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

K*D1691

Abstract: 2A 80v complementary transistor ts 4142 AGQF KSB1151 KSD1691 KSD986
Contextual Info: IME D | 7*^4145 0ÛQ7L5S *1 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD986 SAMS UN G SEMICONDUCTOR INC T-33-29 V - #- LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 150 80 8.0 ±1.5 ± 3 .0

EPITAXX ETX 300

Abstract: EPITAXX EPITAXX ETX 75 EPITAXX ETX 100 RFC 2 ETX1300FJ LED pigtailed
Contextual Info: EPITAXX INC SDE J> • 33b040b OOOQlbfl 1 « E P X -p<//-07 ETX 1 3 0 0 RFC, ETX 1 3 0 0 RST EPITAXX ETX1300FJ&#39; ETX1300FC 1300 nm High Power ELED Modules Features ■ High coupled pow er 75 |iW typical into multimode ■ High speed response (3.5 ns typical)

irfp254

Contextual Info: N-CHANNEL POWER MOSFETS IRFP254/255 FEATURES • • • • • • • • Lower Ros <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: <=p ;> G e n e r a l \J S e m ic o n d u c t o r GFB7030BL N-Channel Logic Level Enhancement-Mode MOSFET VdS 3 0 V cBds<ON 9 mQ I d 6 0 A O % -.vT1 G o- TO-263AB 0.160 4.06) 0.190 (4.83) 0.380(9.65) 0.420 (10.67) 0.045(1.14) 0.055(1.40) 0.21 (5.33) I*- Min. -*•{

aX 010

Abstract: 2N6693 JS 027
Contextual Info: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g

GES2222

Contextual Info: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency

Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Amp, N-Channel M O SFETs With Low Ros on Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs

power transistors table

Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY81 BUY82 BUY90 BUY91
Contextual Info: NPN HIGH CURRENT SWITCHING TA B LE 11-N P N SILICO N PLA N A R HIGH CU R R EN T SW ITCHIN G TR A N SIST O R S < The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments.

kp531

Abstract: IS551
Contextual Info: ZVN4424A/C SPICE PARAMETERS * Z V N 4 4 2 4 M O D E L L A S T R E VIS IO N 1/94 .S U B C K T Z V N 4 4 2 4 30 40 50 * N O D E S : DRAIN G A T E S O U R C E M 1 30 20 50 50 M O D 1 L=1 W = 1 RG 40 20 200 RL 30 50 2 4 0 E 6 D1 50 30 DIODE1 . M O D E L M O D 1 N M O S VT0=1 .25 R S = 2 .3 4 R D = 1 .634 IS=1 E-15 KP=5.31 9

IRF520

Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Contextual Info: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

40N20

Abstract: 40N15 ssm40n15
Contextual Info: S AMS UNG SEMICONDUCTOR INC Tfl DE I 7 ^ 4 1 4 2 SSM40N15/40N20 SSH40N15/40N20 0005304 POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY 150 Volt, 0.08 Ohm SFET Part Num ber V ds RoS on Id SSM 40N15 150V 0 .0 8 0 40A SSM 40N20 200V 0 .0 8 0 40A SSH40N15