BZX84 X8
Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
Text: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage
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BZX84C2V4
BZX84C47
OT-23
O-236)
UL94V-0
Y14/Z9
Y15/A0
Y16/B0
BZX84 X8
SOT-23 marking E9
Zener Diode SOT-23 marking x8
zener diode n8
BZX84C47
A9 SOT-23
zener y4
H8 SOT-23
marking zener Z9
ZENER C3V3
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Untitled
Abstract: No abstract text available
Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung
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BZX84B2V4
BZX84B47
OT-23
O-236)
UL94V-0
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ABB IGBT
Abstract: TF PTC 0300U120 5SNS 0300U120100
Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 Jan. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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0300U120100
5SYA1528-01
CH-5600
ABB IGBT
TF PTC
0300U120
5SNS 0300U120100
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package
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0300U120100
5SYA1528-01
CH-5600
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mj 340
Abstract: 5SNS 0300U120100 5SNS0300U120100
Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package
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0300U120100
5SYA1528-01
Po300U120100
CH-5600
mj 340
5SNS 0300U120100
5SNS0300U120100
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322CNQ
Abstract: 322CNQ030
Text: Preliminary Data Sheet PD-2.550 01/98 322CNQ030 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 322CNQ030 Units 300 A 30 V 150 °C TJ operation 10,000 A High Surge Capability Center tap module
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322CNQ030
322CNQ030
322CNQ
249AA
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303CNQ
Abstract: 303CNQ080 303CNQ100 IRFP460
Text: Bulletin PD-2.234 rev. D 07/01 303CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 303CNQ. Units 300 A 80 to 100 V 22,000 A 175 °C TJ operation Center tap module
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303CNQ.
O-244AB
303CNQ
IRFP460
FL40S02
303CNQ080
303CNQ100
IRFP460
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diode KE
Abstract: 274 transistor KE-01 diode KE 01 DATASHEET SCR ke on module scr scr datasheet igbt scr applications
Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations
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KE DIODE ON
Abstract: diode KE KE-01 diode KE 01
Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations
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marking of m7 diodes
Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW
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M3D049
BZX384
OD323
SCA75
613514/01/pp12
marking of m7 diodes
m7 smd diodes
diode SMD MARKING CODE K6 03
M6 PHILIPS SMD CODE
smd marking m4
diode SMD MARKING CODE K6
diode smd marking M7
DIODE BZX 24
M7 marking codes
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300CNQ
Abstract: 300CNQ035 300CNQ040 300CNQ045 20481
Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for
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PD-20481
300CNQ.
O-244AB
300CNQ
300CNQ035
300CNQ040
300CNQ045
20481
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for
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PD-20481
300CNQ.
O-244AB
300CNQ
08-Mar-07
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300CNQ
Abstract: 300CNQ035 300CNQ040 300CNQ045
Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for
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PD-20481
300CNQ.
O-244AB
300CNQ
12-Mar-07
300CNQ035
300CNQ040
300CNQ045
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transistor CB 945
Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD
Text: Power Operational Amplifier Features General Description 5A peak 2A continuous output current 10 V ms slew rate 300 kHz power bandwidth 850 mW standby power g 15V supplies 300 pA input bias current Virtually no crossover distortion 2 ms settling time to 0 01%
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MIL-STD-883
ELH0101
883are
transistor CB 945
8508901YX
8508902YX
ELH0101AK
ELH0101K
MIL-I-45208A
D3B operational amplifier
10eb2
DCM4 SMD
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smd diode sod-323 marking code A27
Abstract: diode smd marking code A27
Text: DISCRETE SEMICONDUCTORS DAT BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW
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BZX384
OD323
SC-76)
MAM387
R76/02/pp11
smd diode sod-323 marking code A27
diode smd marking code A27
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Untitled
Abstract: No abstract text available
Text: LL4148, LL4150, LL4151, LL4448 Surface Mount Silicon Planar Diodes Silizium-Planar-Dioden für die Oberflächenmontage Version 2004-10-01 0.3 0.3 Type Typ 3.5±0.1 Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung
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LL4148,
LL4150,
LL4151,
LL4448
OD-80
DO-213AA
LL4148
LL4150
LL4151
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1N4148
Abstract: 1N4150 1N4151 1N4448 1n4148 die
Text: 1N4148, 1N4150, 1N4151, 1N4448 Silicon Planar Diodes Silizium-Planar-Dioden Version 2004-10-01 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35
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1N4148,
1N4150,
1N4151,
1N4448
DO-35
OD-27
1N4148
1N4150
1N4151
1N4148
1N4150
1N4151
1N4448
1n4148 die
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m7 smd diodes NXP
Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW
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BZX384
OD323
SC-76)
MAM387
R76/02/pp11
m7 smd diodes NXP
m7 smd diodes
diode SMD MARKING CODE K6 06
Diode smd marking N4
nxp marking code M2
smd diode marking T7
diode NXP marking code N1
diode SMD MARKING CODE K6
BZX384-B3V3
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12M1700
CH-5600
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BYV 200
Abstract: BYV 35 byv ultra Fast Recovery Rectifier
Text: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0
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SID01-03
Abstract: SIE01-01
Text: —K / Rectifier Diodes —K Power Diodes 9 -2 5 0 A st 150 300 450 600 900 900 1350 SID01-12 1200 1800 ERD51-01 ERD51-03 ERD51-06 ERD51-09 ERD51-12 100 150 300 450 SIE01-01 SIE01-03 SIE01-06 SIE01-09 SIE01-12 ERE51-01 ERE51-03 ERE51-06 ERE51-09 ERE51-12 SIG01-01
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SID01-01
SID01-03
SID01-06
SID01-09
SIDSIE01-03
SIE01-06
SIE01-09
SIE01-12
ERE51-01
ERE51-03
SIE01-01
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322CN
Abstract: No abstract text available
Text: I , I Preliminary Data Sheet PD-2.550 01/98 IÖ R Rectifier 322CNQ030 In te rn a tio n a l 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics lF AV Rectangular D escription/Features 322CNQ030 Units 300 A 30 V 1 0,000 A • Center tap module
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322CNQ030
The322CNQ030
322CNQ
-55to150
-249AA
322CN
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74LVC162245A/ 74LVCH162245A 16-bit bus transceiver with direction pin; 300 series termination resistors; 5V Input/Outputs tolerant 3-State Product specification Supersedes data of 1997 Aug 01 IC24 Data Handbook Philips Semiconductors
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74LVC162245A/
74LVCH162245A
16-bit
74LVCH162245A
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D240LG40
Abstract: No abstract text available
Text: Super Fast Recovery Diodes High frequency rectifying Absolute Maximum Ratings Electrical Characteristics Vf Type No. D5LC20U 40 V rm lo [V ] [A ] 200 400 D5LD2QU 200 D5LC20UR 200 DE5LC20U 200 40 SF5LC20U 400 300 40 D8LC20U 400 20UR 40 D8LD20U 40 01ÖLC20U
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ITO-220
D120LC40
D200LC40B
D240LG40
D240LG40
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