C495 transistor
Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250
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BF594
BF594,
BF194
BF595
BF195
BF597
BF197
2N4996
BS9300
2N2219A
C495 transistor
BF194
BF194 equivalent
BF195
bf357
BF597
BF195 equivalent
BF594
transistor c495
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MMBF4416LT1
Abstract: No abstract text available
Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10
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MMBF4416LT1
236AB)
r14525
MMBF4416LT1/D
MMBF4416LT1
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MMBF4416LT1
Abstract: MMBF4416LT1G FR 220
Text: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage
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MMBF4416LT1
OT-23
O-236)
MMBF4416LT1/D
MMBF4416LT1
MMBF4416LT1G
FR 220
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C120H04Q
Abstract: CTB23L CTG-34S 273B C120H05Q C60P40FE CTB-24L CTG-31S tv 11s CTG21S
Text: - *Ì » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ B * W - B * i '/ 9 B X i 'J h B * 4 '/ 9 - Pr s m Vr s m kf (V) I # £ H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120
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C60P40FE
c80h03q
c80h04q
c80h05q
cs0h06q
ctg-31r
CTG-31S
ctg-32r
ctg-32s
ctg-33r
C120H04Q
CTB23L
CTG-34S
273B
C120H05Q
C60P40FE
CTB-24L
tv 11s
CTG21S
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wy smd transistor
Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
Text: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations
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CCS2930
CMM2301
CFK2062
CCS2930
CMM2301)
CFK2062)
PB-CCS2930
wy smd transistor
transistor k626
GHW Connectors
g1n transistor
TRANSISTOR f5j
transistor smd 3f13
smd transistor EY
transistor smd 3fh
smd transistor fh
f5j transistor
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CD1047
Abstract: 00007-00
Text: QS4A215Q1 PRELIMINARY High-Performance CMOS Analog 6-Bit 4:1 Mux/Demux Q FEATURES Low on-resistance: rDS 0n = 5 ft Fast transition time: tjRAN —6 ns Wide bandwidth: 700 MHz (-3 dB point) Crosstalk: -110 dB @ 50 KHz, -66dB @ 30 MHz Off-isolation: -90 dB @ 50 KHz, -50 dB @ 30 MHz,
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QS4A215Q1
QS4A215Q1
-66dB
MDSA-00007-00
CD1047
00007-00
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Untitled
Abstract: No abstract text available
Text: SPT S«?AW£ PROCESSING TECHNOLOGIES SPT7922 12-BIT, 30 MSPS, TTL, A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz input On-Chip T rack/Hold Bipolar ±2.0 V Analog Input
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SPT7922
12-BIT,
12-Bit
SPT7922
32LSldebrazed
SPT7922SCJ
SPT7922SCQ
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
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FMN1
Abstract: No abstract text available
Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0
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3N163
3N164
3N172
3N173
2000u
1500u
4000u
4000u
FMN1
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k2995
Abstract: transistor marking MH 2SK2995
Text: 2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance : |Yfs| = 30 S (typ.)
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2SK2995
K2995
k2995
transistor marking MH
2SK2995
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TK40P03M1
Abstract: TK40P03M tk40p03m,
Text: TK40P03M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK40P03M1 High-Efficiency DC-DC Converter Applications Desktop PC Applications High forward transfer admittance: |Yfs| = 55 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
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TK40P03M1
14MAX
TK40P03M1
TK40P03M
tk40p03m,
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TK50P03M1
Abstract: tk50p03m TC5016
Text: TK50P03M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK50P03M1 High-Efficiency DC-DC Converter Applications Desktop PC Applications High forward transfer admittance: |Yfs| = 90 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
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TK50P03M1
14MAX
TK50P03M1
tk50p03m
TC5016
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2SK2967
Abstract: No abstract text available
Text: 2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2967 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) z High forward transfer admittance : |Yfs| = 30 S (typ.)
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2SK2967
2SK2967
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2SK3440
Abstract: No abstract text available
Text: 2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.)
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2SK3440
2SK3440
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Untitled
Abstract: No abstract text available
Text: TK40M60U MOSFETs Silicon N-Channel MOS DTMOS TK40M60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
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TK40M60U
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IN4100
Abstract: 2SK2778 FM20 a1sh
Text: 2SK2778 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V BR DSS min 100 V VGS = ±20V 100 µA VDS = 100V, VGS = 0V ±12 A VTH ±48 A Re (yfs) 30 (Tc = 25ºC) W RDS (on) 1.0 2.0 7
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2SK2778
IN4100
2SK2778
FM20
a1sh
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Untitled
Abstract: No abstract text available
Text: TK40M60U MOSFETs Silicon N-Channel MOS DTMOS TK40M60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
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TK40M60U
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Untitled
Abstract: No abstract text available
Text: TK40J60U MOSFETs Silicon N-Channel MOS DTMOS TK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
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TK40J60U
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2SK1189
Abstract: FM20
Text: 2SK1189 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±15 A I DSS A VTH 2.0 30 (Tc = 25ºC) W Re (yfs) 4.2 ±60 (Tch ID (pulse) PD 150ºC)
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2SK1189
2SK1189
FM20
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2SK1184
Abstract: FM20
Text: 2SK1184 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 200 V V(BR) DSS VGSS ±20 V I GSS ID ±5 A I DSS A VTH 2.0 W Re (yfs) 1.3 ±20 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)
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2SK1184
2SK1184
FM20
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2SK1712
Abstract: FM20
Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 6.2 mJ ±60 (Tch ID (pulse) PD EAS * 150ºC)
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2SK1712
2SK1712
FM20
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igss
Abstract: 2SK2419 FM20
Text: 2SK2419 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±22 A I DSS ±88 A VTH 30 (Tc = 25ºC) W Re (yfs) ID (pulse) PD * * : PW min Ratings typ (Ta = 25ºC) max 60 2.0 Unit
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2SK2419
igss
2SK2419
FM20
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kone
Abstract: MA110 TC-30
Text: rEHEPATOPHblM TPMOfl re-30 TRIODE reHepaTopHbiii Tpnofl TC-30 npe,qHa3HaHeH Ann reHepupoBaHun BbicoKOHacTOTHbix Kone6 a n m b flM a n a 3 0 H e n a c T O T 4 0 0 -1 5 0 0 M r q. OBLIQUE CBEflEHMfl CXEMA CO EflW HEHM H 3J1E KT P0A 0B C B b lB O flA M M K a T O fl - OKCMflHbiPi K O C B e H H o ro H a K a n a .
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rc-30
TC-30
flMana30He
B03flyiuH0e.
rc-30
33BMCMMOCTM
kone
MA110
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SLA5001
Abstract: No abstract text available
Text: SLA5001 Absolute maximum ratings N-channel External dimensions A General purpose Electrical characteristics Ta=25°C Unit Symbol 100 V V(BR)DSS 100 ±20 V IGSS ID ±5 A IDSS ID(pulse) ±10(PW≤1ms) A VTH 2.0 2.4 Ratings VDSS VGSS EAS* PT 30 mJ Re(yfs) 5 (Ta=25°C, with all circuits operating, without heatsink)
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SLA5001
SLA5001
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