3-347 TRANSISTOR Search Results

MARKING a47

Abstract: A47 SOT23-5
Contextual Info: OPA 3 OPA 347 47 OPA347 OPA2347 OPA4347 OPA 347 OPA 434 7 OPA 234 7 www.ti.com microPower, Rail-to-Rail OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● LOW IQ: 20µA ● microSIZE PACKAGES: SOT23-5, SOT23-8, and TSSOP-14 ● HIGH SPEED/POWER RATIO WITH

zth 347

Abstract: BUZ347
Contextual Info: BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 347 50 V 45 A 0.03 Ω TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol

Contextual Info: Microwave Transistors CONTENTS Page INDEX 3 SELECTION GUIDE 7 MARKING CODES 11 GENERAL 15 DEVICE DATA in alphanumeric sequence 29 PACKAGE OUTLINES 347 DATA HANDBOOK SYSTEM 365

DFC-3

Contextual Info: "TE UNITRODE CORP 9347963 UNITRODE CORP 1 1^^347^3 92D POWER MOSFET TRANSISTORS 10833 D UFNF130 UFNF131 UFNF132 UFNF133 100 Volt, 0.18 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: UNITRODE CORP 9347963 =12 »71^347^1=3 U N I T R O D E CORP 92D 10Q45 □010&45 D POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Fast Switching • Low drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

Contextual Info: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n

fn720

Contextual Info: UNITRODE CORP »£§^347^^3 9347963 U N IT R OD E C ORP 92D 10750 0D1Q7S0 r v POWER MOSFET TRANSISTORS UFN720 UFN721 UFN722 UFN723 400 Volt, 1.8 Ohm N-Channel F EATU RES • C om pact Plastic Package • Fast S w itching • Low Drive Current • Ease of Paralleling

2SD1480

Abstract: 2SD1517
Contextual Info: Power Transistors 1 ^ 3 2 0 5 4 0 0 1 1 15 7 347 « P N C E PANASONIC INDL/ELEK SEMI 2SD1517 2SD1517 fc.'iE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching • • • • • U n it ! mm 4.4m ax. 10.2m ax. • Features

SD 347

Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 15 BUZ 347 = 50 V ^DS = 45 A b 0.03 Q ^DS on • N channel • E nhancem ent mode • A valanche-proof • Packages: T O -2 04 A E (TO-3), TO -2 18 A A (T O P -3)’ ) Type Ordering code BUZ 15 C 6 70 78-A 100 1 -A2

2N6119

Abstract: Unitrode Semiconductor UNITRODE U-66 unijunction application note
Contextual Info: MICROSENI CORP/ WATERTOWN p jjjg SDE » • ^347^3 GG1253b 373 M U N I T 2N6119-2N6120 Planar, TO-18, Hermetic FEATURES • Hermetically Sealed TO-18 Metal Can • Programmable Eta, R6B, lPand lv • Maximum Peak Point Current: 150nA • Minimum Valley Current to 1,5mA

VL86C010

Abstract: VL86C110 27e transistor VL86C11010QC 13OO3 LPN12
Contextual Info: i L S I TECHNOLOGY INC S7E D • i3a&347 QQQblSb Ö ■ VLSI T e c h n o l o g y , in c . ' V 9 2 -3 3 - 2 1 VL86C110 RISC MEMORY CONTROLLER MEMC FEA TU RES DESCRIPTION • Drives up to 32 standard dynamic RAMs giving 4 Mbytes of real memory with 1-Mbit devices

q404 transistor

Abstract: D012S Q4-04 transistor 2A 6v
Contextual Info: MICROSENI CORP/ UATERTOIilN 5QE » ^347^3 D012S05 U2T301 U2T305 POWER DARLINGTONS ITT « U N I T Ü2T40Ï U2T405 5 Amp, 150V, Planar NPN / FEATURES • High Current Gain: 1000 min. @ lc = 2A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • High Voltage: up to 150V min. VCER

Contextual Info: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N

U2T205

Contextual Info: MICROSEMI CORP/ l i lATERTOUN SGE ] ^347^3 DD1BSD3 . POWER DÂR LI NGt ON S 327 M UNIT U2T10l U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN O FE A TU R E S • • • • • DESCRIPTION High Current Gain: up to 2QOO min @ ic = 5A Low Saturation Voltage: as low as 1.5V max @ lc = 5A

SD 347 transistor

Abstract: BUZ 1025 SD 347
Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 Vbs 50 V fa ^DSfon Package Ordering Code 45 A 0.03 f l TO-218AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current

SD 347 transistor

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C

6MBP50RTA060

Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
Contextual Info: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with

J645

Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

zdt705

Abstract: T705 DSA003726
Contextual Info: SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ZDT705 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

DAIN mpx capacitor

Abstract: dv550140s SNX-R1540 VTM160-4 NP975864 carli mpx PFS714EG Keystone CL-60 carli ELECTRONICS DAIN MPX
Contextual Info: Title Reference Design Report for a High Performance 347 W PFC Stage Using HiperPFS PFS714EG Specification 90 VAC – 264 VAC Input; 380 VDC Output Application PFC Front End Stage Author Applications Engineering Department Document Number RDR-236 Date November 18, 2010

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Contextual Info: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array