in5400 diode
Abstract: IN5408 IN5408 diodes Current Rating of IN5408 diode 3E05 diode IN5408 IN5400 in5404 diode Current Rating of IN5402 diode in5408 diode
Text: DIODES LIMITED IN5400 t o IN5408 FAIRACRES ESTATE. DEDWORTH ROAD. W INDSOR. BERKSHIRE. Telephone: W INDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS The 3E Series silicon rectifiers offer current ratings up to 3 Am
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IN5400
IN5408
MIL-S-19500
in5400 diode
IN5408
IN5408 diodes
Current Rating of IN5408 diode
3E05
diode IN5408
in5404 diode
Current Rating of IN5402 diode
in5408 diode
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5ME3
Abstract: No abstract text available
Text: SINO— AMERICAN SILICON 5ME 3> • DQQQQS1 Q ■ —p 2 3 -OS SURFACE MOUNT GLASS PASSIVATED FAST SWITCHING SILICON RECTIFIER V0LTM3E RANGE 50 to 600 VOltS CURRENT 0.5 Ampere FEATURES • For surface mounted applications • High temperature metallurgically bonded-no
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MIL-STD-19500
4001C/5
2601C
MIL-STD-202
5ME3
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RUTTONSHA all diodes
Abstract: RUTTONSHA SILICON RECTIFIER 6 Fmr 60 25 fmr 160 RUTTONSHA SILICON RECTIFIER 6 F 6 FMR 40 RUTTONSHA RUTTONSHA 120 6 FMR 40 rectifier RUTTONSHA SILICON RECTIFIER 6 Fmr 120 RUTTONSHA type 6 fmr 100
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 3 & 6 Ampere Silicon Power Diodes FEATURES ❖ All diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 4) except stud.
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107J
Abstract: 106J SMR-101J
Text: SINO-AMERICAN SILICON SME J> • fl5 fll7 Mb 0000057 1 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER "T'-2 3 - Q S VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere • For surface mounted applications • High temperature metallurgically bonded-no compression contracts as found in other diodeconstructed rectifiers
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MIL-STD-19500
265TC
MIL-STD-202
107J
106J
SMR-101J
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PR3002 diode
Abstract: mic bridge rectifier 1N5401 mic 1N5408 mic diode bridge 35 Ampere 1000V 1N5404 bridge rectifier diode PR3002 1N5408 Diode 1N5408 Diode 1N5403 PR3003
Text: 6862229 DO PACCOM ELECTRONICS zr SILICON SINGLE PHASE 3 AMPERE RECTIFIER/FAST RECOVERY DIODE _ -P4CC0I1 ELECTRONICS I • w • High current capability • Low leakage • Low forward voltage drop Type D1 DIMENSIONS A L D1 D2 25 9.53 1.42 5.33 .98 .38 .056
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1-60Hz
1N5400
1N5401
1N5402
148th
PR3002 diode
mic bridge rectifier
1N5401 mic
1N5408 mic
diode bridge 35 Ampere 1000V
1N5404 bridge rectifier
diode PR3002
1N5408 Diode 1N5408
Diode 1N5403
PR3003
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B897
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types CNY33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon High Voltage Phototransistor M IL L IM E T E R S M IN . absolute m axim um ratings: 25°C 6 milliwatts milliamps ampere M AX. 3 30 3Ò0 300 RE f
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CNY33
CNY33
B897
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Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR
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MJ10023/D
MJ10023
Motorola AN222A
application MJ10023
U430B
motorola 222A
motorola SPS bipolar
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Herrmann KB 60
Abstract: of diode herrmann bridge rectifier herrmann silicon bridge rectifier 3KHB05 3KHB10 2KHBS4
Text: Bulletin 55 - 503 KHEL Khandelwal Herrmann Electronics Limited VRRM : 50 - 1000 Volts V RMS : 20 - 500 Volts I O AVG : 3 Ampere TECHNICAL SPIFICATIONS OF SILICON BRIDGE RECTIFIER DIODES TYPE 3KHB05 TO 3KHB10 FEATURES 22 .0 • Low Cost 15 .0 7.0 • Compact Potted Version
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3KHB05
3KHB10
Plot-101,
Herrmann KB 60
of diode
herrmann bridge rectifier
herrmann silicon bridge rectifier
3KHB10
2KHBS4
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2N5986
Abstract: 2N5987 2N5988 2N5989 2N5991 MBD5300 sc 0645 225AB diode F4 3J 75S4
Text: MOTOROLA SC 6367254 DE | b 3 t . 7 2 S 4 -tXSTRS/R F> MOTOROLA SC XSTRS/R F 96D Ö 0 4 0 4 OoaOMDM D - p r .3 3 - m T PNP MOTOROLA ’ 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
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2N5986,
2N5987
2N5988
2N5989,
2N5991
2N5989
2N5987
2N5988,
2N5986
2N5988
2N5989
2N5991
MBD5300
sc 0645
225AB
diode F4 3J
75S4
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4229P-L00-3C8
Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8
Text: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 | ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection
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t3b75sq
MJ12005D
C01LECT0
4229P-L00-3C8
20A400
MJ12005D
POT CORE 4229P-L00
Ferrox EC52-3C8
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2N6756
Abstract: No abstract text available
Text: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high
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2N6756
2N6756
19500/542A
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CASE353-01
Abstract: No abstract text available
Text: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON
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MJ10041
MJ10044
MJ10047
MJ10041,
MJ10044,
96D81008
MJE150291
MJE15028
2N2322
CASE353-01
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JE3300
Abstract: MJE3310 motorola amplifier MJE3301 MJE3300 je331
Text: MOTOROLA SC X S T R S /R 12E 0 F b 3 fei? 5 5 4 I 0 QÖS3 S 1 NPN M O TO RO LA T | r-13'33 MJE3300, MJE3301 • SEMICONDUCTOR PNP TECHNICAL DATA MJE3310 PLASTIC DARLINGTON COMPLEMENTARY SILICON ANNULAR POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and high-speed switching
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MJE3300,
MJE3301
MJE3310
JE3310/M
JE3300
JE3300
MJE3310
motorola amplifier
MJE3300
je331
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bu323
Abstract: bu323a
Text: M O T O R O L A SC 1EE 0 I XSTRS/R F & | b3fc,7554 0 0 0 4 0 0 0 MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA 16 AMPERE PEAK NPN SILICON POWER DARLINGTON TRANSISTOR The B U 3 2 3 , B U 3 2 3 A are m o no lith ic darlington transistors designed fo r a u to m otive ignition, sw itch in g regulator and m o to r
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mj10025
Abstract: No abstract text available
Text: MOTOROLA SC XSTR S/R F 12E D | b 3 b 7 2 S ‘4 OGflSObfl MOTOROLA M | 9 MJ10024 MJ10025 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 2 0 AMPERE N PN S ILIC O N POWER D A R LIN G TO N TR A N S IS T O R S SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS
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MJ10024
MJ10025
J10024
mj10025
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ln4001
Abstract: 1N4001-1N4007 IN4003 diode 1N4001 specifications 1N4007 diodes 1N4007 1N4001 IN4003 forward voltage diode 1n4001 diode in4003
Text: DIODES LIMITED 1N4001-1N4007 SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency
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1N4001-1N4007
1N4001
1N4002
IN4003
1N4004
1N4005
1N4006
1N4007
ln4001
diode 1N4001 specifications
1N4007
diodes 1N4007
IN4003 forward voltage
diode 1n4001
diode in4003
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BR84B
Abstract: BR88B Rectifier BR86B bridge rectifier Br88B BR81B BR82B BR88B bridge rectifer br-84b
Text: DIODES LIMITED BR8XB SERIES FAIRACRES ESTATE. DEDW O RTH ROAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1.3 AMPERE SILICON BRIDGE RECTIFER With “LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation
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BR81B
BR82B
BR84B
BR86B
BR88B
BR88B Rectifier
bridge rectifier Br88B
BR88B
bridge rectifer
br-84b
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PDF
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BR510
Abstract: BR54 A1510 BR52 br56 A1505 A151 A152 A154 A156
Text: DIODES LIMITED A15X-BR5X SERIES FAIRACRES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON BRIDGE With “ LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation
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A15X-BR5X
A1505
BR505
A1510
BR510
BR510
BR54
BR52
br56
A151
A152
A154
A156
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PDF
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SD10 Diode
Abstract: SD4 diode diode SD4 diodes with 4 ampere SD6 Diode diode 5 ampere SD-05-SD-10 5 ampere diode SD-05 SD-10
Text: DIODES LIMITED SD-05-SD-10 SERIES FAIRACRES ESTATE. DEDW ORTH ROAD, W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEA TU R ES. High Conductance Leads
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SD-05-SD-10
SD-05
SD-10
MIL-E-5272C)
05-SD
SD10 Diode
SD4 diode
diode SD4
diodes with 4 ampere
SD6 Diode
diode 5 ampere
5 ampere diode
SD-10
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schottky 400v
Abstract: P600 diode P600 P600 PACKAGE fast recovery diode 400v 5A diode sb5 SCHOTTKY diode 400V 1A P1200 UF600 rectifier 400V 5A
Text: „Low Vf“ Bipolar Dioden Eine interessante Alternative zu hochsperrenden Schottky-Dioden “Low Vf“ Bipolar Diodes An interesting alternative to high blocking Schottky diodes 1 Diotec Semiconductor AG 2005 V04 US Anwendungsbeispiele von Schottky-Dioden,
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Silic200
P600-Geh
O-220AC
schottky 400v
P600 diode
P600
P600 PACKAGE
fast recovery diode 400v 5A
diode sb5
SCHOTTKY diode 400V 1A
P1200
UF600
rectifier 400V 5A
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diode 3a05
Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Text: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050
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1IN4139-1N4145
1N4139
1N4140
1N4141
1N4142
1N4143
1N4144
1N4145
1N4139-1N4145
diode 3a05
3a05
diode IN4142
3A05 Diode
diode with PIV 200
1N4145
COLOR MARKING CODE ON DIODE
IN4142
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Untitled
Abstract: No abstract text available
Text: RL201 thru RL207 Pb Free Plating Product Pb RL201 thru RL207 2.0 Ampere Silicon General Purpose Rectifier Diodes DO-15 Features • High surge current capability • 2.0 ampere operation at TA = 75oC with no thermal • runaway • Low reverse leakage •
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RL201
RL207
DO-15
250oC/10
DO-15.
MIL-STD-750,
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AL1510
Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Text: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006
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IN4001
1N4007
IN4001S
IN4007S
IN5391
IN5399
PS200
PS2010
IN5400
IN5408
AL1510
FL4010
ag204
IN5822 diode
ag208
IN4007 bridge rectifier ic
IN5405 diode
AG206
Diode IN5398
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PDF
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RUTTONSHA 40 hm 160
Abstract: 70 HM ruttonsha RUTTONSHA 40 hm RUTTONSHA 85 HM ruttonsha RUTTONSHA 40 hm 120 RUTTONSHA POWER DIODE 40 hmr 120 70 hmr 160 100 hmr ruttonsha
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 85 Ampere Silicon Power Diodes FEATURES ❖ Diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 5).
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