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    2SK679A-T-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    Toshiba America Electronic Components 2SK672

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    Renesas Electronics Corporation 2SK679A-AZ/JD

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    2SK67 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK67 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK67 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK67 Unknown FET Data Book Scan PDF
    2SK671 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK671 Unknown FET Data Book Scan PDF
    2SK672 Toshiba Original PDF
    2SK672 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK672 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK672 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK67-2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK672 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK672 Unknown FET Data Book Scan PDF
    2SK673 Toshiba Original PDF
    2SK673 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK673 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK673 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK673 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK67-3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK673 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK673 Unknown FET Data Book Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m


    Original     		PDF 2SK676H5-2

    Untitled

    Abstract: No abstract text available
    Text: 2SK677-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m


    Original     		PDF 2SK677-2

    2sj165

    Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159
    Text: ロード・マップ トランジスタ 機能・用途別（シグナルMOS FET） VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)


    Original     		PDF 2SK1132 2SJ165 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2sj165 X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159

    SC-59

    Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
    Text: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A


    Original     		PDF 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2SJ212 SC-59 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84

    Untitled

    Abstract: No abstract text available
    Text: 2SK676-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5.0 V(BR)GSS (V)-3.5 I(D) Max. (A)70m P(D) Max. (W)340m Maximum Operating Temp (øC)150’ I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m


    Original     		PDF 2SK676-2

    ic sony 0642

    Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
    Text: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h


    OCR Scan     		PDF 2SK677H5 ic sony 0642 sony 0642 2SK677 IC 0642 sony ke 931 0642 sony

    yc 545

    Abstract: 2SK678
    Text: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK678 100nA 300nA 20ki2) yc 545 2SK678

    sony 0642

    Abstract: No abstract text available
    Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron


    OCR Scan     		PDF 2SK677H5 2SK677H5 D0G312b sony 0642

    tc6105

    Abstract: 2SK679 BH rn transistor 10285 TC-6105
    Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8


    OCR Scan     		PDF 2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285

    2SK67

    Abstract: 1500IU
    Text: 2SK67 Impedance Converter N-channel Silicon Junction FET PACKAGE DIMENSIONS in m illim eters inches 29±0 2 • Low zero gate voltage drain current: l DSS * 20tytA TYP. • High forward transfer admittance: I y « I - 1500/iU TYP. <VDS •= 5.0V, V GS » 0)


    OCR Scan     		PDF 2SK67 20tytA 1500/iU 2SK67 1500IU

    2SK674

    Abstract: Voltage regulator 0V to 48v 5A
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK674 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . Low Drain-Source ON Resistance : Rd s (ON)=0 .040Sl(Typ.)


    OCR Scan     		PDF 2SK674 040Sl 20kii) 2SK674 Voltage regulator 0V to 48v 5A

    Untitled

    Abstract: No abstract text available
    Text: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron


    OCR Scan     		PDF 2SK676H51 2SK676H5

    Untitled

    Abstract: No abstract text available
    Text: 6 4 275 25 N E C N E C ELE CT RO NI CS INC ELECTRONICS 2SK679 FEA TU RES • Suitable for switching power supplies, actuater controls, P A C K A G E D IM EN SIO N S in millimvteri inches 52 MAX and pulse circuits • Low RDStoni; R d s (od) “ 0-95 n TYP-


    OCR Scan     		PDF 2SK679

    2SK67A

    Abstract: Zero-Gate Voltage Drain Current TC-1488
    Text: NEC JUNCTION FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters inches L o w zero gate voltage dra in c u rre n t: I d s s = 2 0 0


    OCR Scan     		PDF 2SK67A 500/iS J22686 2SK67A Zero-Gate Voltage Drain Current TC-1488

    2SK67A

    Abstract: 2SK67
    Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w zero gate voltage drain c u rre n t: Idss“ 200 m A TVP. in millimeter* {inches} 1-1-8? 0.043


    OCR Scan     		PDF 2SK67A yfs21 2SK67A 2SK67

    2SK679A

    Abstract: transistor d 1991 ar nec 2334 transistor M 7830
    Text: MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm T h e 2 S K 6 7 9 A , N-channel vertical typ e M O S F E T , is a sw itching device w h ic h can be d ire c tly driven fro m an IC operating w ith a 5 V


    OCR Scan     		PDF 2SK679A 2SK679A transistor d 1991 ar nec 2334 transistor M 7830

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    28S DIODE

    Abstract: 2SK672 hc 175
    Text: 2SK672 FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 03.6 ±0.2 DRIVE APPLICATIONS. 13 2 . Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK672 0-15iXTyp. 300uA Te10mA, 28S DIODE 2SK672 hc 175

    2SK676

    Abstract: GaAs FET HEMT Chips
    Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high


    OCR Scan     		PDF 2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips

    2SK679A

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm


    OCR Scan     		PDF 2SK679A 2SK679A, 2SK679A

    TC-2334

    Abstract: 2SK679A transistor 7830 A7830
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 FFECT TRANSISTOR 2SK679A N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK679A, N-channel vertical type MOS FET, is a switching


    OCR Scan     		PDF 2SK679A 2SK679A, TC-2334 2SK679A transistor 7830 A7830

    transistor 7830

    Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830
    Text: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N *-*;H fé M O S z u F E T T*. 5 V * j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o


    OCR Scan     		PDF 2SK679A 2SK679Aà 105UCiOtfà transistor 7830 D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830

    2SK673

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK673 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0 3 .6 ± 0 .2 10.3 MAX. Jf . L o w Drai n - S o u r c e ON Resistance


    OCR Scan     		PDF 2SK673 2SK673

    2SK679

    Abstract: PA33
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2SK679 • Suitable fo r switching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • Low RDS 0n ; RDS(on) = 0-95 in m illim eters (inches) TYP. 5.2 MAX. (V GS = 4 V, l D = 0 .5 A)


    OCR Scan     		PDF 2SK679 RS39726 1986M 2SK679 PA33